Martin Kuball | |
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Alma mater | Max Planck Institute for Solid State Physics (PhD) |
Awards |
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Scientific career | |
Fields | |
Institutions | University of Bristol |
Thesis | Effects of Surfaces, Doping and Electrical Fields on the optical and electronic properties of GaAs (1995) |
Doctoral advisor | Manuel Cardona |
Website | www |
Martin Kuball [1] is the chair of the Royal Academy of Engineering in Emerging Technologies, professor in physics at the University of Bristol, United Kingdom, and director of the Centre for Device Thermography and Reliability (CDTR). [2]
Kuball received his Diplom from the University of Kaiserslautern, Germany and his PhD from the Max Planck Institute for Solid State Physics, Stuttgart, Germany, During his PhD he worked with Manuel Cardona. Prior to joining the University of Bristol he was Feodor Lynen Fellow of the Alexander von Humboldt Foundation at Brown University working with Arto Nurmikko.
Kuball is known for his research into thermal characterization and reliability of electronic materials and devices, with particular focus on wide-bandgap semiconductors, and RF and power electronic devices. He pioneered techniques such as Raman thermography, based on Raman spectroscopy, to determine temperature in devices with submicron spatial resolution and nanosecond time resolution, [3] [4] and numerous other techniques for the thermal [5] [6] and electrical characterization [7] [8] of materials and devices including for understanding device reliability. Raman Thermography was used by multiple companies to qualify GaN transistor technology for space applications. [9] In 2019, he founded TherMap Solutions to commercialize techniques he developed and is presently its chief business officer.
He presently leads the £5M EPSRC Programme Grant GaN-DaME [10] [11] which develops GaN-on-Diamond technology for ultra high power RF devices, and the £2M EPSRC Platform grant MANGI [12] which implements this technology for next generation internet applications.
In recognition for his achievements, Kuball was awarded a Royal Academy of Engineering chair in emerging technologies, [13] was elevated to fellow of the Institute of Electrical and Electronics Engineers, [14] [15] of the Materials Research Society, [16] [17] of Society of Photo-Optical Instrumentation Engineers, [18] [19] Institution of Engineering and Technology [20] and the Institute of Physics. [21] [22] Kuball has also won numerous awards including the Otto-Hahn-Award for Young Scientists in 1995, [23] He Bong Kim Award in 2010, [24] Royal Society Wolfson Award, [25] [26] in 2015, and TechWorks Group of the Year Award in 2017 [18]
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
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Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling.
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The Centre for Device Thermography and Reliability is a research facility at the University of Bristol, a research university located in Bristol, United Kingdom. Founded in 2001, by Professor Kuball the centre is engaged in thermal and reliability research of semiconductor devices, in particular for microwave and power electronic devices. It is housed in the H. H. Wills Physics Laboratory, a noted physics laboratory associated with the Physics department of the university. The centre is noted for developing an integrated Raman-IR thermography technique to probe self-heating in silicon, GaAs and other devices. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before. These techniques are critical in understanding the reliability of Compound semiconductor devices applicable in power and microwave devices and in the long term as a viable replacement for Silicon devices as it approaches the end of scaling.
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