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Industry | Semiconductors |
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Founded | May 23, 1983 |
Headquarters | , |
Area served | Worldwide |
Products | DRAM, power discrete Integrated Circuits, power management ICs |
Website | www |
Mosel Vitelic Inc. manufactures power discrete, power management IC and analog IC technologies. Mosel Vitelic Inc. (TWSE:2342) joined the Taiwan Stock Exchange in September 1995.
Its products include power MOSFETs, insulated-gate bipolar transistors, diodes, analog ICs, transient voltage suppressors (TVS), solar energy products, wide bandgap layout products, as well as other components and modules.
The company offers its products in China, Europe, the Americas, Japan, and South Korea.
Mosel Vitelic Inc. is based in Hsinchu, Taiwan.
The founding and incorporation of Mosel Vitelic was in 1991.
In 1985, Mosel Vitelic Inc. founded the Mosel Vitelic Corporation, their subsidiary for the production of integrated circuits for memory. It primarily made DRAM and Flash memory. They used a .12u/.14u process and manufacture 128Mb/256Mb SDR, DDR RAM and 256Mb/512Mb DDR2 RAM. [2]
Around May 2009, the company closed its doors due to the lack of funding from the parent corporation.
Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory, or primary storage. Archaic synonyms for main memory include core and store.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies. The microprocessor and memory chips are VLSI devices.
Static random-access memory is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
Cypress Semiconductor Corporation was an American semiconductor design and manufacturing company. It offered NOR flash memories, F-RAM and SRAM Traveo microcontrollers, PSoCs, PMICs, capacitive touch-sensing controllers, Wireless BLE Bluetooth Low-Energy and USB connectivity solutions.
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Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
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1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell like dynamic random-access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM. 1T-SRAM has a standard single-cycle SRAM interface and appears to the surrounding logic just as an SRAM would.
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The following outline is provided as an overview of and topical guide to information technology:
The term die shrink refers to the scaling of metal–oxide–semiconductor (MOS) devices. The act of shrinking a die creates a somewhat identical circuit using a more advanced fabrication process, usually involving an advance of lithographic nodes. This reduces overall costs for a chip company, as the absence of major architectural changes to the processor lowers research and development costs while at the same time allowing more processor dies to be manufactured on the same piece of silicon wafer, resulting in less cost per product sold.
Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon.
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. It also licenses its technology for use in embedded MRAM (eMRAM) applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
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