Ron Reedy

Last updated
Ron Reedy
Born
Ronald E. Reedy

Nationality Flag of the United States.svg United States
Education UC San Diego
US Naval Academy
Occupation(s)Technology executive
Electrical Engineer
Entrepreneur
Known for Peregrine Semiconductor
Silicon on sapphire

Ronald Reedy is an American businessman, scientist and researcher. In the semiconductor industry, he advanced silicon on sapphire (SOS) and CMOS technology. [1] [2]

Contents

Education

In 1969, Reedy graduated from the United States Naval Academy in Annapolis with a BSEE. He then earned a MSEE degree from Naval Postgraduate School in Monterey. In 1983, he received his Ph.D. in EE & Applied Physics from UC San Diego. [3] [4]

Career

Reedy began his career at the NOSC (US Naval Ocean Systems Center) where he worked on silicon CMOS processing. In 1988, Reedy along with NOSC colleagues Mark Burgener and Graham Garcia published a research paper in IEEE Electron Device Letters that proved that SOS films thinned to 100 nm were suitable for application to high-performance down-scaled CMOS circuitry. [5] It was with this advancement that Reedy decided to commercialize the technology. Their research findings were instrumental to the industry and have since been cited in 13 IEEE research papers and 58 patents. [6]

In 1990, Reedy co-founded Peregrine Semiconductor to commercialize the advanced technology. Peregrine became a fabless chip designer [7] that was publicly traded on the NASDAQ [8] until the company was acquired by Murata in December 2014 for $471 million. [9] [10] Reedy served as the company's founding CEO and the company's CTO [11] before retiring in early 2015. Reedy now holds the title of CTO emeritus of Peregrine Semiconductor. [12]

In 2016, Reedy came out of retirement and founded Skeyeon, the first company based on placing a satellite constellation in Very Low Earth Orbit (VLEO) for the earth imaging market. There are numerous benefits to operating in VLEO that are not available in higher altitude LEO and GEO orbits, where most satellites and the International Space Station operate, including inherently higher satellite performance; substantially lower launch and operating costs; and creating self-cleaning orbits essentially solving the significant problem of space debris. Skeyeon has developed technology enabling VLEO operation for many different applications, and is actively developing its first satellites for launch.

Reedy sits on the Council of Advisors for UCSD's Jacobs School of Engineering and its Gordon Leadership Center. [2] [13]

Over the course of his career, Reedy has been listed as an inventor on dozens of patents. [14] Many of those patents are related to advancements in silicon on insulator, silicon on sapphire and CMOS.

Awards and recognition

In 2011, Reedy and co-founder Mark Burgener were awarded the IEEE Daniel E. Noble Award for Emerging Technologies for their contribution [15] "to make silicon on sapphire (SOS) technology commercially feasible for wireless communications." [16] The IEEE Noble award is presented annually to individuals who made a significant contribution to emerging technologies. [17] [18]

See also

Related Research Articles

<span class="mw-page-title-main">Integrated circuit</span> Electronic circuit formed on a small, flat piece of semiconductor material

An integrated circuit, also known as a microchip or IC, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.

<span class="mw-page-title-main">CMOS</span> Technology for constructing integrated circuits

Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.

Jean Amédée Hoerni was a Swiss-born American engineer. He was a silicon transistor pioneer, and a member of the "traitorous eight". He developed the planar process, an important technology for reliably fabricating and manufacturing semiconductor devices, such as transistors and integrated circuits.

Silicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer of silicon grown on a sapphire wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS technologies.

In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire. The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.

<span class="mw-page-title-main">Mixed-signal integrated circuit</span> Integrated circuit

A mixed-signal integrated circuit is any integrated circuit that has both analog circuits and digital circuits on a single semiconductor die. Their usage has grown dramatically with the increased use of cell phones, telecommunications, portable electronics, and automobiles with electronics and digital sensors.

<span class="mw-page-title-main">Murata Manufacturing</span> Japanese electronic components manufacturer

Murata Manufacturing Co., Ltd. is a Japanese manufacturer of electronic components, based in Nagaokakyo, Kyoto. It produces ceramic passive electronic components, primarily capacitors, and has a majority marketshare worldwide in ceramic filters, high-frequency parts, and sensors. As of March 31, 2013 Murata Manufacturing has 24 subsidiaries in Japan and 52 overseas in the United States, Canada, Mexico, Brazil, Germany, France, Italy, the United Kingdom, Switzerland, the Netherlands, Spain, Hungary, Finland, China, Taiwan, South Korea, Singapore, Malaysia, the Philippines, Thailand, Hong Kong, Vietnam and India.

<span class="mw-page-title-main">History of telecommunication</span> Aspect of history

The history of telecommunication began with the use of smoke signals and drums in Africa, Asia, and the Americas. In the 1790s, the first fixed semaphore systems emerged in Europe. However, it was not until the 1830s that electrical telecommunication systems started to appear. This article details the history of telecommunication and the individuals who helped make telecommunication systems what they are today. The history of telecommunication is an important part of the larger history of communication.

Soitec is an international company based in France, that manufactures substrates used in the creation of semiconductors.

RF Micro Devices, was an American company that designed and manufactured high-performance radio frequency systems and solutions for applications that drive wireless and broadband communications. Headquartered in Greensboro, North Carolina, RFMD traded on the NASDAQ under the symbol RFMD. The Company was founded in Greensboro, North Carolina, in 1991. RF Micro had 3500 employees, 1500 of them in Guilford County, North Carolina.

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia.

Ghavam G. Shahidi is an Iranian-American electrical engineer and IBM Fellow. He is the director of Silicon Technology at the IBM Thomas J Watson Research Center. He is best known for his pioneering work in silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology since the late 1980s.

The IEEE Daniel E. Noble Award is a Technical Field Award of the IEEE for contributions to emerging technologies. The award is named after Daniel E. Noble. The award was established by the IEEE Board of Directors in 2000, replacing the prior IEEE Morris N. Liebmann Memorial Award.

Dr. Harold M. Manasevit (1927–2008) was an American materials scientist.

Thomas H. Lee is a professor in the Department of Electrical Engineering at Stanford University. Lee's research focus has been on gigahertz-speed wireline and wireless integrated circuits built in conventional silicon technologies, particularly CMOS; microwave; and RF circuits.

<span class="mw-page-title-main">Peregrine Semiconductor</span>

pSemi, is a San Diego-based manufacturer of high-performance RF CMOS integrated circuits. A Murata Manufacturing company since December 2014, the company's products are used in aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment and wireless infrastructure markets. Their UltraCMOS technology is a proprietary implementation of silicon on sapphire (SOS) and silicon on insulator (SOI) substrates that enables high levels of monolithic integration.

Ali Hajimiri is an academic, entrepreneur, and inventor in various fields of engineering, including electrical engineering and biomedical engineering. He is the Bren Professor of Electrical Engineering and Medical Engineering at the California Institute of Technology (Caltech).

<span class="mw-page-title-main">Abbas El Gamal</span> American electrical engineer, educator and entrepreneur

Abbas El Gamal is an Egyptian-American electrical engineer, educator and entrepreneur. He is best known for his contributions to network information theory, field-programmable gate arrays (FPGAs), and CMOS imaging sensors and systems. He is the Hitachi America Professor of Engineering at Stanford University. He has founded, co-founded and served on the board of directors and technical advisory boards of several semiconductor, EDA, and biotechnology startup companies.

RF CMOS is a metal–oxide–semiconductor (MOS) integrated circuit (IC) technology that integrates radio-frequency (RF), analog and digital electronics on a mixed-signal CMOS RF circuit chip. It is widely used in modern wireless telecommunications, such as cellular networks, Bluetooth, Wi-Fi, GPS receivers, broadcasting, vehicular communication systems, and the radio transceivers in all modern mobile phones and wireless networking devices. RF CMOS technology was pioneered by Pakistani engineer Asad Ali Abidi at UCLA during the late 1980s to early 1990s, and helped bring about the wireless revolution with the introduction of digital signal processing in wireless communications. The development and design of RF CMOS devices was enabled by van der Ziel's FET RF noise model, which was published in the early 1960s and remained largely forgotten until the 1990s.

References

  1. Love, Janine (May 31, 2011). "What's up with silicon on sapphire?". EE Times. Retrieved 25 January 2014.
  2. 1 2 Stephens, AnnaMaria. "Sapphire and Silicon". Triton. Retrieved 13 November 2013.
  3. "Perfecting RF CMOS: How Peregrine Pioneered RF SOI". San Diego IEEE Website. Retrieved 10 February 2014.
  4. "Gordon Engineering Leadership Forum - Ronald Reedy". Gordon Center UCSD YouTube Channel. Gordon Center UCSD. Retrieved 10 February 2014.
  5. Burgener, Graham; Reedy, Ronald E.; Burgener, M.L. (Jan 1988). "High-quality CMOS in thin (100 nm) silicon on sapphire". IEEE Electron Device Letters. 9 (1): 32–34. Bibcode:1988IEDL....9...32G. doi:10.1109/55.20404. S2CID   33232225.
  6. See 'Cited by' section of Burgener, Reedy & Burgener 1988
  7. Bigelow, Bruce (Nov 22, 2010). "Peregrine Semiconductor Files for IPO". Xconomy. Retrieved 13 November 2013.
  8. Bigelow, Bruce (August 7, 2012). "After Persevering for 22 Years, Peregrine Semiconductor Marks IPO" . Retrieved 13 November 2013.
  9. Scouras, Ismini (25 August 2014). "Murata to Buy RF IC Vendor Peregrine for $471M". EE Times. Retrieved 7 March 2015.
  10. "Murata Completes Acquisition of Peregrine". Compound Semiconductor. 12 December 2014. Retrieved 7 March 2015.
  11. Gokey, Malarie (Oct 16, 2013). "Mobile.Pro Exclusive: Peregrine's Ron Reedy Talks Radio Chips and Smartphones". Mobile.Pro. Archived from the original on 26 October 2013. Retrieved 14 November 2013.
  12. "Co-Founder Ron Reedy Retires". Peregrine Semiconductor Newsroom. 28 January 2015. Retrieved 7 March 2015.
  13. "Council of Advisors". UCSD Jacobs School of Engineering. Archived from the original on 28 September 2013. Retrieved 13 November 2013.
  14. "Results of Search in US Patent Collection db for: Reedy-Ronald-E". US Patent & Trademark Office, Patent Full Text and Image Database. Retrieved 13 November 2013.
  15. "Mark L. Burgener and Ronald E. Reedy, Champions of Sapphire Intergrated[sic] Circuit Technology, to Receive 2011 IEEE Daniel E. Noble Award for Emerging Technologies". IEEE News Release. Retrieved 10 February 2014.
  16. "IEEE Daniel E. Noble Award for Emerging Technologies Recipients". IEEE website. Retrieved 13 November 2013.
  17. Blyler, John (Summer 2011). "Noble Award Honors Low-Power RF Technology". Chip Design. Retrieved 28 January 2014.
  18. "Peregrine's co-founders to receive IEEE award for Emerging Technologies". Semiconductor Today. 31 May 2011. Retrieved 10 February 2014.