In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
Zinc oxide is an inorganic compound with the formula ZnO. It is a white powder that is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, food supplements, rubbers, plastics, ceramics, glass, cement, lubricants, paints, sunscreens, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, semi conductors, and first-aid tapes. Although it occurs naturally as the mineral zincite, most zinc oxide is produced synthetically.
A "photoelectrochemical cell" is one of two distinct classes of device. The first produces electrical energy similarly to a dye-sensitized photovoltaic cell, which meets the standard definition of a photovoltaic cell. The second is a photoelectrolytic cell, that is, a device which uses light incident on a photosensitizer, semiconductor, or aqueous metal immersed in an electrolytic solution to directly cause a chemical reaction, for example to produce hydrogen via the electrolysis of water.
In inorganic chemistry and materials chemistry, a ternary compound or ternary phase is a chemical compound containing three different elements.
The telluride ion is the anion Te2− and its derivatives. It is analogous to the other chalcogenide anions, the lighter O2−, S2−, and Se2−, and the heavier Po2−.
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
In nanotechnology, nanorods are one morphology of nanoscale objects. Each of their dimensions range from 1–100 nm. They may be synthesized from metals or semiconducting materials. Standard aspect ratios are 3-5. Nanorods are produced by direct chemical synthesis. A combination of ligands act as shape control agents and bond to different facets of the nanorod with different strengths. This allows different faces of the nanorod to grow at different rates, producing an elongated object.
Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga2O3. It is actively studied for applications in power electronics, phosphors, and gas sensing. The compound has several polymorphs, of which the monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to GaN and SiC-based power electronics applications and solar-blind UV photodetectors. The orthorhombic ĸ-Ga2O3 is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to GaN and SiC, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt. β-Ga2O3 is thought to be radiation-hard, which makes it promising for military and space applications.
A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.
A copper indium gallium selenide solar cell is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solid solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.
Photoelectrochemistry is a subfield of study within physical chemistry concerned with the interaction of light with electrochemical systems. It is an active domain of investigation. One of the pioneers of this field of electrochemistry was the German electrochemist Heinz Gerischer. The interest in this domain is high in the context of development of renewable energy conversion and storage technology.
Two-photon photovoltaic effect is an energy collection method based on two-photon absorption (TPA). The TPP effect can be thought of as the nonlinear equivalent of the traditional photovoltaic effect involving high optical intensities. This effect occurs when two photons are absorbed at the same time resulting in an electron-hole pair.
Solar Frontier Kabushiki Kaisha is a Japanese photovoltaic company that develops and manufactures thin film solar cells using CIGS technology. It is a fully owned subsidiary of Showa Shell Sekiyu and located in Minato, Tokyo, Japan. The company was founded in 2006 as Showa Shell Solar, and renamed Solar Frontier in April 2010.
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms. Indirect experimental evidence of the existence of these effects has been reported in the literature in relation to GaN and InN semiconductor optoelectronic devices.
Molybdenum(IV) telluride, molybdenum ditelluride or just molybdenum telluride is a compound of molybdenum and tellurium with formula MoTe2, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium.
Zinc oxide (ZnO) nanostructures are structures with at least one dimension on the nanometre scale, composed predominantly of zinc oxide. They may be combined with other composite substances to change the chemistry, structure or function of the nanostructures in order to be used in various technologies. Many different nanostructures can be synthesised from ZnO using relatively inexpensive and simple procedures. ZnO is a semiconductor material with a wide band gap energy of 3.3eV and has the potential to be widely used on the nanoscale. ZnO nanostructures have found uses in environmental, technological and biomedical purposes including ultrafast optical functions, dye-sensitised solar cells, lithium-ion batteries, biosensors, nanolasers and supercapacitors. Research is ongoing to synthesise more productive and successful nanostructures from ZnO and other composites. ZnO nanostructures is a rapidly growing research field, with over 5000 papers published during 2014-2019.
The telluride oxides or oxytellurides are double salts that contain both telluride and oxide anions. They are in the class of mixed anion compounds.
Tellurogallates are chemical compounds which contain anionic units of tellurium connected to gallium. They can be considered as gallates where tellurium substitutes for oxygen. Similar compounds include the thiogallates, selenogallates, telluroaluminates, telluroindates and thiostannates. They are in the category of chalcogenotrielates or more broadly tellurometallates or chalcogenometallates.
