International Conference on Nitride Semiconductors

Last updated
International Conference on Nitride Semiconductors
AbbreviationICNS
Discipline Materials Science Solid State Physics Electronic Engineering
Publication details
Publisher Wiley-VCH Physica Status Solidi
History1995–
FrequencyBiennial
The Scottish Exhibition and Conference Centre in Glasgow, venue for ICNS-9 Wfm foster armadillo.jpg
The Scottish Exhibition and Conference Centre in Glasgow, venue for ICNS-9

The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.

Contents

ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.

ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA) [1]

The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. [2] The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).

The ICNS-15 [3] will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).

Conference list

Conference nameLocationDates
ICNS-15 [4] Flag of Sweden.svg Malmö, Sweden6-11 July 2025
ICNS-14 [5] Flag of Japan.svg Fukuoka, Japan12-17 November 2023
ICNS-13 [6] Flag of the United States.svg Bellevue, Washington, Seattle’s Eastside, United States7–12 July 2019
ICNS-12 [7] Flag of France.svg Strasbourg, France24–28 July 2017
ICNS-11 [8] Flag of the People's Republic of China.svg Beijing, China30 August – 4 September 2015
ICNS-10 [9] Flag of the United States.svg Washington D.C., United States25–30 August 2013
ICNS-9 [10] Flag of the United Kingdom.svg Glasgow, UK10–15 July 2011
ICNS-8 [11] Flag of South Korea.svg Jeju, Korea 18–23 October 2009
ICNS-7 [12] [13] Flag of the United States.svg Las Vegas, United States16–21 September 2007
ICNS-6 [14] Flag of Germany.svg Bremen, Germany28 August – 2 September 2005
ICNS-5 [15] Flag of Japan.svg Nara, Japan25–30 May 2003
ICNS-4 [16] Flag of the United States.svg Denver, United States16–20 July 2001
ICNS-3 [17] Flag of France.svg Montpellier, France4–9 July 1999
ICNS-2 [18] Flag of Japan.svg Tokushima, Japan27–31 October 1997
TWN'95 [19] Flag of Japan.svg Nagoya, Japan21–23 September 1995


See also

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References

  1. "IWN2016" (PDF).
  2. "14th International Conference on Nitride Semiconductors". icns14.jp. Retrieved 2024-03-08.
  3. "ICNS-15". mkon.nu. Retrieved 2024-03-08.
  4. "ICNS-15". mkon.nu. Retrieved 2024-03-08.
  5. "14th International Conference on Nitride Semiconductors". icns14.jp. Retrieved 2024-03-08.
  6. mrs.org/icns-13 https://www.mrs.org/icns-13 . Retrieved 2019-07-18.{{cite web}}: Missing or empty |title= (help)
  7. icns-12.coulomb.univ-montp2.fr http://icns-12.coulomb.univ-montp2.fr/ . Retrieved 2016-09-29.{{cite web}}: Missing or empty |title= (help)
  8. G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C13 (5–6) 177–180 doi : 10.1002/pssc.201670126
  9. J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C11 (3–4) 370–372 doi : 10.1002/pssc.201470048
  10. P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C9 (3–4) 430–432 doi : 10.1002/pssc.201260134
  11. S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C7 (7-8) 1737–1742 doi : 10.1002/pssc.201060095
  12. "ICNS-7: Home Page".
  13. S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C5 1472–1474 doi : 10.1002/pssc.200860019
  14. "Events Archive".
  15. H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C0 1977 doi : 10.1002/pssc.200390139
  16. Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A188 (1–2); Part B Physica Status Solidi B228 (1–2) ISBN   3-527-40347-7
  17. Article title
  18. A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 doi : 10.1016/S0961-1290(97)86971-2
  19. Topical Workshop on III-V Nitrides