Photoluminescence is light emission from any form of matter after the absorption of photons. It is one of many forms of luminescence and is initiated by photoexcitation, hence the prefix photo-. Following excitation, various relaxation processes typically occur in which other photons are re-radiated. Time periods between absorption and emission may vary: ranging from short femtosecond-regime for emission involving free-carrier plasma in inorganic semiconductors up to milliseconds for phosphoresence processes in molecular systems; and under special circumstances delay of emission may even span to minutes or hours.
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Indium nitride is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
Chalcogenide glass is a glass containing one or more chalcogens. Up until recently, chalcogenide glasses (ChGs) were believed to be predominantly covalently bonded materials and classified as covalent network solids. A most recent and extremely comprehensive university study of more than 265 different ChG elemental compositions, representing 40 different elemental families now shows that the vast majority of chalcogenide glasses are more accurately defined as being predominantly bonded by the weaker van der Waals forces of atomic physics and more accurately classified as van der Waals network solids. They are not exclusively bonded by these weaker vdW forces, and do exhibit varying percentages of covalency, based upon their specific chemical makeup. Polonium is also a chalcogen but is not used because of its strong radioactivity. Chalcogenide materials behave rather differently from oxides, in particular their lower band gaps contribute to very dissimilar optical and electrical properties.
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared for InN to the ultraviolet of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride.
Isamu Akasaki was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
Physica Status Solidi, often stylized physica status solidi or pss, is a family of international peer-reviewed, scientific journals, publishing research on all aspects of solid state physics, and materials science. It is owned and published by Wiley–VCH. These journals publish over 2000 articles per year, making it one of the largest international publications in condensed matter physics. The current editor in chief is Stefan Hildebrandt at the Editorial Office based in Berlin. This office also manages the peer-review process.
Gérald Bastard is a highly cited French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris.
The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki and Hiroshi Amano, who are Nobel laureates in physics (2014)
Hiroshi Amano is a Japanese physicist, engineer and inventor specializing in the field of semiconductor technology. For his work he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura for "the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources".
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms. Indirect experimental evidence of the existence of these effects has been reported in the literature in relation to GaN and InN semiconductor optoelectronic devices.
Ogtay Abiloglu Samadov or Samedov is an Azerbaijani nuclear physicist who since 2015 has been director of the Institute of Radiation Problems of Azerbaijan National Academy of Sciences.
International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in Semiconductors in Gatlinburg in 1959 until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings.
Otto Francis Sankey was an American physicist. He was Regents Professor at Arizona State University and a Fellow of the American Physical Society.
Stefan Karol Estreicher is a theoretical physicist, currently serving as Paul Whitfield Horn Distinguished Professor Emeritus at the Physics Department of Texas Tech University in Lubbock, Texas.
Europium(III) nitride is a binary inorganic compound of europium and nitrogen with the chemical formula EuN.
