International Conference on Nitride Semiconductors | |
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Abbreviation | ICNS |
Discipline | Materials Science Solid State Physics Electronic Engineering |
Publication details | |
Publisher | Wiley-VCH Physica Status Solidi |
History | 1995– |
Frequency | Biennial |
The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.
ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.
ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA) [1]
The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. [2] The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).
The ICNS-15 [3] will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).
Conference name | Location | Dates |
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ICNS-15 [4] | Malmö, Sweden | 6-11 July 2025 |
ICNS-14 [5] | Fukuoka, Japan | 12-17 November 2023 |
ICNS-13 [6] | Bellevue, Washington, Seattle’s Eastside, United States | 7–12 July 2019 |
ICNS-12 [7] | Strasbourg, France | 24–28 July 2017 |
ICNS-11 [8] | Beijing, China | 30 August – 4 September 2015 |
ICNS-10 [9] | Washington D.C., United States | 25–30 August 2013 |
ICNS-9 [10] | Glasgow, UK | 10–15 July 2011 |
ICNS-8 [11] | Jeju, Korea | 18–23 October 2009 |
ICNS-7 [12] [13] | Las Vegas, United States | 16–21 September 2007 |
ICNS-6 [14] | Bremen, Germany | 28 August – 2 September 2005 |
ICNS-5 [15] | Nara, Japan | 25–30 May 2003 |
ICNS-4 [16] | Denver, United States | 16–20 July 2001 |
ICNS-3 [17] | Montpellier, France | 4–9 July 1999 |
ICNS-2 [18] | Tokushima, Japan | 27–31 October 1997 |
TWN'95 [19] | Nagoya, Japan | 21–23 September 1995 |
Photoluminescence is light emission from any form of matter after the absorption of photons. It is one of many forms of luminescence and is initiated by photoexcitation, hence the prefix photo-. Following excitation, various relaxation processes typically occur in which other photons are re-radiated. Time periods between absorption and emission may vary: ranging from short femtosecond-regime for emission involving free-carrier plasma in inorganic semiconductors up to milliseconds for phosphoresence processes in molecular systems; and under special circumstances delay of emission may even span to minutes or hours.
Copper oxide is any of several binary compounds composed of the elements copper and oxygen. Two oxides are well known, Cu2O and CuO, corresponding to the minerals cuprite and tenorite, respectively. Paramelaconite (Cu4O3) is less well characterized.
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling.
Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Indium nitride is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
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Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared for InN to the ultraviolet of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride.
Physica Status Solidi, often stylized physica status solidi or pss, is a family of international peer-reviewed, scientific journals, publishing research on all aspects of solid state physics, and materials science. It is owned and published by Wiley–VCH. These journals publish over 2000 articles per year, making it one of the largest international publications in condensed matter physics. The current editor in chief is Stefan Hildebrandt at the Editorial Office based in Berlin. This office also manages the peer-review process.
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The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki and Hiroshi Amano, who are Nobel laureates in physics (2014)
Hiroshi Amano is a Japanese physicist, engineer and inventor specializing in the field of semiconductor technology. For his work he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura for "the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources".
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order piezoelectric coefficients times products of the strain tensor components. The idea was put forward experimentally for zincblende CdTe heterostructures in 1992, It was confirmed in 1996 by the application of a hydrostatic pressure to the same heterostructures, and found to agree with the results of an ab initio approach, but also to a simple calculation using what is currently known as the Harrisson’s Model. The idea was then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms. Indirect experimental evidence of the existence of these effects has been also reported in the literature in relation to GaN and InN semiconductor optoelectronic devices.
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Europium(III) nitride is a binary inorganic compound of europium and nitrogen with the chemical formula EuN.
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