International Workshop on Nitride Semiconductors

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International Workshop on Nitride Semiconductors
AbbreviationIWN
Discipline Materials Science Solid State Physics Electronic Engineering
Publication details
Publisher Wiley-VCH Physica Status Solidi
History2000–
FrequencyBiennial

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki (Nagoya University, Meijo University) and Hiroshi Amano (Nagoya University), who are Nobel laureates in physics (2014)

Contents

- IWN2018 was held 11–16 November 2018 in Kanazawa, Japan, and chaired by Hiroshi Fujioka (the University of Tokyo, Japan) [1]

- IWN2016 was held 2–7 October 2016 in Orlando, United States, and jointly chaired by Alan Doolittle (Georgia Institute of Technology and Tomás Palacios (Massachusetts Institute of Technology, USA) [2]

- IWN2012 was held 14–19 October 2012 in Sapporo, Japan and chaired by Hiroshi Amano (Nagoya University, Japan).

Conference list

Conference nameLocationDates
IWN2024 [3] Flag of the United States.svg Honolulu, USA3-8 November 2024
IWN2022 [4] Flag of Germany.svg Berlin, Germany9–14 October 2022
IWN2018 [5] Flag of Japan.svg Kanazawa, Japan11–16 November 2018
IWN2016 [6] Flag of the United States.svg Orlando, United States2–8 October 2016
IWN2014 Flag of Poland.svg Wrocław, Poland24–29 August 2014
IWN2012 [7] Flag of Japan.svg Sapporo, Japan14–19 October 2012
IWN2010 [8] Flag of the United States.svg Tampa, United States19–24 September 2010
IWN2008 [9] [10] Flag of Switzerland (Pantone).svg Montreux, Switzerland6–10 October 2008
IWN2006 [11] Flag of Japan.svg Kyoto, Japan22–27 October 2006
IWN2004 [12] Flag of the United States.svg Pittsburgh, USA19–23 July 2004
IWN2002 [13] Flag of Germany.svg Aachen, Germany22–25 July 2002
IWN2000 [14] Flag of Japan.svg Nagoya, Japan24–27 September 2000

See also

References

  1. ↑ "IWN2018".
  2. ↑ "IWN2016" (PDF). Archived from the original (PDF) on 2020-03-25. Retrieved 2022-06-02.
  3. ↑ "International Workshop on Nitride Semiconductors 2024". www.iwn2024.org. Retrieved 2024-07-22.
  4. ↑ "International Workshop on Nitride Semiconductors 2022". www.iwn2022.org. Retrieved 2022-10-10.
  5. ↑ "International Workshop on Nitride Semiconductors 2018". www.iwn2018.jp. Retrieved 2016-11-01.
  6. ↑ "International Workshop on Nitride Semiconductors (IWN 2016)". www.mrs.org. Archived from the original on 2016-11-01. Retrieved 2016-11-01.
  7. ↑ "Iwn2012". Archived from the original on 2011-09-18. Retrieved 2011-07-16.
  8. ↑ "Iwn 2010". Archived from the original on 2011-02-16. Retrieved 2011-02-14.
  9. ↑ "Iwn 2008". Archived from the original on 2010-09-29. Retrieved 2011-02-14.
  10. ↑ N. Grandjean, M. Ilegems, T. Suski and R. Butté (2009) "Preface: Phys. Status Solidi C 6/S2" Physica Status Ssolidi (c)6 S289–S292 doi : 10.1002/pssc.200960059
  11. ↑ K. Akimoto, S. Chichibu and T. Suemasu (2007) "Preface: phys. stat. sol. (c) 4/7" Physica Status Solidi C4 2204–2208 doi : 10.1002/pssc.200790011
  12. ↑ "Proceedings of the International Workshop on Nitride Semiconductors (IWN 2004)" Physica Status Solidi C1 issue 13 ISBN   978-3-527-40568-8
  13. ↑ A. Hoffmann and A. Rizzi (2003) "Editor's Preface: phys. stat. sol. (c) 0/1" Physica Status Solidi C0 21 doi : 10.1002/pssc.200390028
  14. ↑ "Proceedings of International Workshop on Nitride Semiconductors" ISBN   4-900526-13-4
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