Related Research Articles
Cathodoluminescence is an optical and electromagnetic phenomenon in which electrons impacting on a luminescent material such as a phosphor, cause the emission of photons which may have wavelengths in the visible spectrum. A familiar example is the generation of light by an electron beam scanning the phosphor-coated inner surface of the screen of a television that uses a cathode ray tube. Cathodoluminescence is the inverse of the photoelectric effect, in which electron emission is induced by irradiation with photons.
Solid-state chemistry, also sometimes referred as materials chemistry, is the study of the synthesis, structure, and properties of solid phase materials. It therefore has a strong overlap with solid-state physics, mineralogy, crystallography, ceramics, metallurgy, thermodynamics, materials science and electronics with a focus on the synthesis of novel materials and their characterization. A diverse range of synthetic techniques, such as the ceramic method and chemical vapour depostion, make solid-state materials. Solids can be classified as crystalline or amorphous on basis of the nature of order present in the arrangement of their constituent particles. Their elemental compositions, microstructures, and physical properties can be characterized through a variety of analytical methods.
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB. The value of ΦB depends on the combination of metal and semiconductor.
A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes. Connecting the two materials causes creation of a depletion region near the boundary, as the free electrons fill the available holes, which in turn allows electric current to pass through the junction only in one direction.
Energy-dispersive X-ray spectroscopy, sometimes called energy dispersive X-ray analysis or energy dispersive X-ray microanalysis (EDXMA), is an analytical technique used for the elemental analysis or chemical characterization of a sample. It relies on an interaction of some source of X-ray excitation and a sample. Its characterization capabilities are due in large part to the fundamental principle that each element has a unique atomic structure allowing a unique set of peaks on its electromagnetic emission spectrum. The peak positions are predicted by the Moseley's law with accuracy much better than experimental resolution of a typical EDX instrument.
A microprobe is an instrument that applies a stable and well-focused beam of charged particles to a sample.
Deep-level transient spectroscopy (DLTS) is an experimental tool for studying electrically active defects in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are considered as defect "finger prints" used for their identifications and analysis.
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena.
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant, as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead. FIB can also be incorporated in a system with both electron and ion beam columns, allowing the same feature to be investigated using either of the beams. FIB should not be confused with using a beam of focused ions for direct write lithography. These are generally quite different systems where the material is modified by other mechanisms.
Capacitance–voltage profiling is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal–semiconductor junction or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps. The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such as its doping profile and electrically active defect densities., Measurements may be done at DC, or using both DC and a small-signal AC signal, or using a large-signal transient voltage.
Characterization, when used in materials science, refers to the broad and general process by which a material's structure and properties are probed and measured. It is a fundamental process in the field of materials science, without which no scientific understanding of engineering materials could be ascertained. The scope of the term often differs; some definitions limit the term's use to techniques which study the microscopic structure and properties of materials, while others use the term to refer to any materials analysis process including macroscopic techniques such as mechanical testing, thermal analysis and density calculation. The scale of the structures observed in materials characterization ranges from angstroms, such as in the imaging of individual atoms and chemical bonds, up to centimeters, such as in the imaging of coarse grain structures in metals.
Scanning capacitance microscopy (SCM) is a variety of scanning probe microscopy in which a narrow probe electrode is positioned in contact or close proximity of a sample's surface and scanned. SCM characterizes the surface of the sample using information obtained from the change in electrostatic capacitance between the surface and the probe.
Instrumental analysis is a field of analytical chemistry that investigates analytes using scientific instruments.
Ion milling is a specialized physical etching technique that is a crucial step in the preparation of material analysis techniques. After a specimen goes through ion milling, the surface becomes much smoother and more defined, which allows scientists to study the material much easier. The ion mill generates high-energy particles to remove material off the surface of a specimen, similar to how sand and dust particles wear away at rocks in a canyon to create a smooth surface. Relative to other techniques, ion milling creates much less surface damage, which makes it perfect for surface-sensitive analytical techniques. This article discusses the principle, equipment, applications, and significance of ion milling.
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of radio signals, and emitting and detecting light.
Nanoprobing is method of extracting device electrical parameters through the use of nanoscale tungsten wires, used primarily in the semiconductor industry. The characterization of individual devices is instrumental to engineers and integrated circuit designers during initial product development and debug. It is commonly utilized in device failure analysis laboratories to aid with yield enhancement, quality and reliability issues and customer returns. Commercially available nanoprobing systems are integrated into either a vacuum-based scanning electron microscope (SEM) or atomic force microscope (AFM). Nanoprobing systems that are based on AFM technology are referred to as Atomic Force nanoProbers (AFP).
In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes. The band bending concept was first developed in 1938 when Mott, Davidov and Schottky all published theories of the rectifying effect of metal-semiconductor contacts. The use of semiconductor junctions sparked the computer revolution in the second half of the 20th century. Devices such as the diode, the transistor, the photocell and many more play crucial roles in technology.
Differential Hall Effect Metrology (DHEM) is an electrical depth profiling technique that measures all critical electrical parameters through an electrically active material at sub-nanometer depth resolution. DHEM is based on the previously developed Differential Hall Effect (DHE) method. In the traditional DHE method, successive sheet resistance and Hall effect measurements on a semiconductor layer are made using Van der Pauw and Hall effect techniques. The thickness of the layer is reduced through successive processing steps in between measurements. This typically involves thermal, chemical or electrochemical etching or oxidation to remove material from the measurement circuit. This data can be used to determine the depth profiles of carrier concentration, resistivity and mobility. DHE is a manual laboratory technique requiring wet chemical processing for etching and cleaning the sample between each measurement, and it has not been widely used in the semiconductor industry. Since the contact region is also affected by the material removal process, the traditional DHE approach requires that contacts be newly and repeatedly be made to collect data on the coupon. This introduces contact related noise and reduces the repeatability and stability of the data. The speed, accuracy and, depth resolution of DHE has been generally limited because of its manual nature. The DHEM technique is an improvement over the traditional DHE method in terms of automation, speed, data stability and, resolution. DHEM technique had been deployed in a semi-automated or automated tools.
References
- Schroder, Dieter K. Semiconductor Material and Device Characterization. 3rd Ed. John Wiley and Sons, Inc. Hoboken, New Jersey, 2006.
- McGuire, Gary E. Characterization of Semiconductor Materials: Principles and Methods. Vol 1. Noyes Publications, Park Ridge, New Jersey, 1989.