Silicon oxynitride

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Silicon oxynitride
Sinoite.png
Names
Other names
Silicon nitride oxide, dinitride disilicon oxide
Identifiers
  • Si2N2O:12033-76-0 X mark.svgN
ECHA InfoCard 100.031.617 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • Si2N2O:234-793-1
Properties
N2OSi2
Molar mass 100.183 g·mol−1
AppearanceColorless crystals
Density 2.81 g·cm−3
Structure
Orthorhombic [1]
Cmc21 No 36, Pearson symbol oS20
a = 0.48553 nm, b = 0.52194 nm, c = 0.52194 nm, Z = 4
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Silicon oxynitride is a ceramic material with the chemical formula SiOxNy. While in amorphous forms its composition can continuously vary between SiO2 (silica) and Si3N4 (silicon nitride), the only known intermediate crystalline phase is Si2N2O. [2] It is found in nature as the rare mineral sinoite in some meteorites and can be synthesized in the laboratory. [3]

Contents

Properties

Crystal structure of Si2N2O. Atoms: red - O, blue - N, gray - Si. Sinoite.png
Crystal structure of Si2N2O. Atoms: red – O, blue – N, gray – Si.

The crystalline structure of silicon oxynitride is built by SiN3O tetrahedra connected through oxygen atoms along the c axis and through nitrogen atoms perpendicular to it. The strong covalent bonding of this structure results in high flexural strength and resistance to heating and oxidation up to temperatures of about 1600 °C. [4]

Synthesis

Polycrystalline silicon oxynitride ceramics are primarily produced by nitridation of a mixture of Si and silicon dioxide at a temperature above melting point of silicon (1414 °C), in the range 1420–1500 °C: [4] [5]

3 Si + SiO2 + 2 N2 → 2 Si2N2O

Silicon oxynitride materials with various stoichiometries may also arise as the products of pyrolysis of preceramic polymers, namely polysilanes and polyethoxysilsesquiazane. SiON materials thus obtained are referred to as polymer derived ceramics or PDCs. By using preceramic polymers, dense or porous Si oxynitride ceramics in complex forms can be obtained using shaping techniques more typically applied for polymers. [6]

Applications

Thin films of silicon oxynitride can be grown on silicon using a variety of plasma deposition techniques and used in microelectronics as a dielectric layer alternative to silicon dioxide and silicon nitride with the advantages of low leakage currents and high thermal stability. [7] These films have an amorphous structure and therefore their chemical composition can widely deviate from Si2N2O. By changing the nitrogen/oxygen ratio in these films, their refractive index can be continuously tuned between the value of ~1.45 for silicon dioxide and ~2.0 for silicon nitride. This property is useful for gradient-index optics components such as graded-index fibers. [8]

Silicon oxynitrides can be doped with metal atoms. The most common example is sialon, a family of quaternary SiAlON compound. Quaternary silicon oxynitrides containing a lanthanide element, such as La, Eu or/and Ce are used as phosphors. [9]

Related Research Articles

Boron nitride Refractory compound with formula BN

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.

Silicon dioxide Main constituent of sand and 10% by mass of the earths crust

Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula SiO2, most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as synthetic product. Notable examples include fused quartz, fumed silica, silica gel, and aerogels. It is used in structural materials, microelectronics (as an electrical insulator), and as components in the food and pharmaceutical industries.

Silicon carbide Extremely hard semiconductor containing silicon and carbon

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

Epitaxy

Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline substrate. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the crystalline substrate is defined in terms of the orientation of the crystal lattice of each material. For epitaxial growth, the new layer must be crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Amorphous growth or multicrystalline growth with random crystal orientation does not meet this criterion. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred.

The term high-κ dielectric refers to a material with a high dielectric constant, as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k", instead of "high-κ".

Silicon nitride Compound of silicon and nitrogen

Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3
N
4
is the most thermodynamically stable of the silicon nitrides. Hence, Si
3
N
4
is the most commercially important of the silicon nitrides when referring to the term "silicon nitride". It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
2
SO
4
. It is very hard. It has a high thermal stability.

Sialon

SiAlON ceramics are a specialist class of high-temperature refractory materials, with high strength at ambient and high temperatures, good thermal shock resistance and exceptional resistance to wetting or corrosion by molten non-ferrous metals, compared to other refractory materials such as, for example, alumina. A typical use is with handling of molten aluminium. They also are exceptionally corrosion resistant and hence are also used in the chemical industry. SiAlONs also have high wear resistance, low thermal expansion and good oxidation resistance up to above ~1000 °C. They were first reported around 1971.

Silicon monoxide Chemical compound

Silicon monoxide is the chemical compound with the formula SiO where silicon is present in the oxidation state +2. In the vapour phase, it is a diatomic molecule. It has been detected in stellar objects and has been described as the most common oxide of silicon in the universe.

Solid One of the four fundamental states of matter

Solid is one of the four fundamental states of matter. The molecules in a solid are closely packed together and contain the least amount of kinetic energy. A solid is characterized by structural rigidity and resistance to a force applied to the surface. Unlike a liquid, a solid object does not flow to take on the shape of its container, nor does it expand to fill the entire available volume like a gas. The atoms in a solid are bound to each other, either in a regular geometric lattice, or irregularly. Solids cannot be compressed with little pressure whereas gases can be compressed with little pressure because the molecules in a gas are loosely packed.

Ceramic matrix composite

Ceramic matrix composites (CMCs) are a subgroup of composite materials and a subgroup of ceramics. They consist of ceramic fibers embedded in a ceramic matrix. The fibers and the matrix both can consist of any ceramic material, whereby carbon and carbon fibers can also be regarded as a ceramic material.

Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC lattice spacings.

Polysilazanes are polymers in which silicon and nitrogen atoms alternate to form the basic backbone. Since each silicon atom is bound to two separate nitrogen atoms and each nitrogen atom to two silicon atoms, both chains and rings of the formula occur. can be hydrogen atoms or organic substituents. If all substituents R are H atoms, the polymer is designated as Perhydropolysilazane, Polyperhydridosilazane, or Inorganic Polysilazane ([H2Si–NH]n). If hydrocarbon substituents are bound to the silicon atoms, the polymers are designated as Organopolysilazanes. Molecularly, polysilazanes are isoelectronic with and close relatives to Polysiloxanes (silicones).

Sinoite

Sinoite is rare mineral with the chemical formula Si2N2O. It was first found in 1905 in chondrite meteorites and identified as a distinct mineral in 1965. Sinoite crystallizes upon meteorite impact as grains smaller than 0.2 mm surrounded by Fe-Ni alloys and the mineral enstatite. It is named after its SiNO composition and can be prepared in the laboratory as a silicon oxynitride ceramic.

Polysilane

Polysilanes are organosilicon compounds with the formula (R2Si)n. They are relatives of traditional organic polymers but their backbones are composed of silicon atoms. They exhibit distinctive optical and electrical properties. They are mainly used industrially as precursors to silicon carbide.

Oxycarbide glass, also referred to as silicon oxycarbide, is a type of glass that contains oxygen and carbon in addition to silicon dioxide. It is created by substituting some oxygen atoms with carbon atoms. This glass may contain particles of amorphous carbon, and silicon carbide. SiOC materials of varying stoichiometery are attractive owing to their generally high density, hardness and high service temperatures. Through diverse forming techniques high performance parts in complex shapes can be achieved. Unlike pure SiC, the versatile stoichiometry of SiOC offers further avenues to tune physical properties through appropriate selection of processing parameters.

The term Preceramic Polymer refers to one of various polymeric compounds, which through pyrolysis under appropriate conditions are converted to ceramic compounds, having high thermal and chemical stability. Ceramics resulting from the pyrolysis of preceramic polymers are known as polymer derived ceramics, or PDCs. Polymer derived ceramics are most often silicon based and include silicon carbide, silicon oxycarbide, silicon nitride and silicon oxynitride. Such PDCs are most commonly amorphous, lacking long-range crystalline order.

Polymer derived ceramics, referred to commonly as PDCs, Is a term for ceramic materials formed by the pyrolysis of preceramic polymers, usually under inert atmosphere. The compositions of PDCs most commonly include silicon carbide (SiC), silicon oxycarbide (SiOxCy), silicon nitride(Si3N4), silicon carbonitride (Si3+xN4Cx+y) and silicon oxynitride (SiOxNy). The composition, phase distribution and structure of PDCs depend on the polymer precursor compounds used and the pyrolysis conditions applied. The key advantage of this type of ceramic material is the versatility afforded by the use of polymeric precursors in terms of processing and shaping. Polymer derived ceramics can be additively manufactured (3D printed) in stereolithography based techniques, through photopolymerization of preceramic polymers. Such processing of PDCs has drawn attention towards applications requiring thermally and chemically stable materials in complex forms that are challenging to achieve through more conventional ceramic processing routes, such as powder sintering and slip casting. PDCs are further valuable towards the synthesis of porous and mesoporous materials and thin films.

The nitridosilicates are chemical compounds that have anions with nitrogen bound to silicon. Counter cations that balance the electric charge are mostly electropositive metals from the alkali metals, alkaline earths or rare earth elements. Silicon and nitrogen have similar electronegativities, so the bond between them is covalent. Nitrogen atoms are arranged around a silicon atom in a tetrahedral arrangement.

The oxonitridosilicates, also called sions or silicon-oxynitrides are inorganic ceramic compounds in which oxygen and nitrogen atoms are bound to a silicon atom. A common variant also has aluminium replacing some silicon. They can be considered as silicates in which nitrogen partially replaces oxygen, or as nitridosilicates with oxygen partly replacing nitrogen.

References

  1. 1 2 Ohashi, Masayoshi; et al. (1993). "Solid Solubility of Aluminum in O'-SiAlON". J. Am. Ceram. Soc. 76 (8): 2112–2114. doi:10.1111/j.1151-2916.1993.tb08343.x.
  2. Hillert M, Jonsson S, Sundman B (1992). "Thermodynamic Calculation of the Si-N-O System". Z. Metallkd. 83: 648–654.
  3. Ryall, W. R.; Muan, A. (1969). "Silicon Oxynitride Stability". Science. 165 (3900): 1363–4. Bibcode:1969Sci...165.1363R. doi:10.1126/science.165.3900.1363. PMID   17817887. S2CID   22339579.
  4. 1 2 Ralf Riedel (18 April 2008). Ceramics science and technology: Structures. Wiley-VCH. pp. 97–. ISBN   978-3-527-31155-2 . Retrieved 8 October 2011.
  5. A. E. Rubin (1997). "Sinoite (Si2N2O): Crystallization from EL chondrite impact melts" (PDF). American Mineralogist. 82 (9–10): 1001. Bibcode:1997AmMin..82.1001R. doi:10.2138/am-1997-9-1016. S2CID   128629202.
  6. SiON PDCs
  7. E. S. Machlin (9 December 2005). Materials Science in Microelectronics: The effects of structure on properties in thin films. Elsevier. pp. 36–. ISBN   978-0-08-044639-4 . Retrieved 8 October 2011.
  8. Albert R. Landgrebe; Electrochemical Society. Dielectric Science and Technology Division; Electrochemical Society. High Temperature Materials Division (2001). Silicon nitride and silicon dioxide thin insulating films: proceedings of the sixth international symposium. The Electrochemical Society. pp. 191–. ISBN   978-1-56677-313-3 . Retrieved 8 October 2011.
  9. Xie, Rong-Jun; Hirosaki, Naoto (2007). "Silicon-based oxynitride and nitride phosphors for white LEDs—A review" (free download). Science and Technology of Advanced Materials. 8 (7–8): 588. Bibcode:2007STAdM...8..588X. doi: 10.1016/j.stam.2007.08.005 .