An integrated circuit (IC), also known as a microchip, computer chip, or simply chip, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship. It is an experience-curve law, a type of law quantifying efficiency gains from experience in production.
Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.
Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
In electronics, rapid single flux quantum (RSFQ) is a digital electronic device that uses superconducting devices, namely Josephson junctions, to process digital signals. In RSFQ logic, information is stored in the form of magnetic flux quanta and transferred in the form of Single Flux Quantum (SFQ) voltage pulses. RSFQ is one family of superconducting or SFQ logic. Others include Reciprocal Quantum Logic (RQL), ERSFQ – energy-efficient RSFQ version that does not use bias resistors, etc. Josephson junctions are the active elements for RSFQ electronics, just as transistors are the active elements for semiconductor electronics. RSFQ is a classical digital, not quantum computing, technology.
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.
The International Technology Roadmap for Semiconductors (ITRS) is a set of documents that was coordinated and organized by Semiconductor Research Corporation and produced by a group of experts in the semiconductor industry. These experts were representative of the sponsoring organisations, including the Semiconductor Industry Associations of Taiwan, South Korea, the United States, Europe, Japan, and China.
The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" node. The "14 nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22 nm" was expected to be "16 nm". All "14 nm" nodes use FinFET technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology.
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.
In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the "5 nm" process as the MOSFET technology node following the "7 nm" node. In 2020, Samsung and TSMC entered volume production of "5 nm" chips, manufactured for companies including Apple, Huawei, Mediatek, Qualcomm and Marvell.
Adrian Mihai Ionescu is a Romanian and Swiss physicist and academic. He is full Professor at the Swiss Federal Institute of Technology in Lausanne (EPFL), where he is founder and director of the Nanoelectronic Devices Laboratory.
Ian A. Young is an Intel engineer. Young is a co-author of 50 research papers, and has 71 patents in switched capacitor circuits, DRAM, SRAM, BiCMOS, x86 clocking, Photonics and spintronics.
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell–Boltzmann tail of carriers, which limits MOSFET drain current subthreshold swing to about 60 mV/decade of current at room temperature.
The Task Force on Rebooting Computing (TFRC), housed within IEEE Computer Society, is the new home for the IEEE Rebooting Computing Initiative. Founded in 2013 by the IEEE Future Directions Committee, Rebooting Computing has provided an international, interdisciplinary environment where experts from a wide variety of computer-related fields can come together to explore novel approaches to future computing. IEEE Rebooting Computing began as a global initiative launched by IEEE that proposes to rethink the concept of computing through a holistic look at all aspects of computing, from the device itself to the user interface. As part of its work, IEEE Rebooting Computing provides access to various resources like conferences and educational events, feature and scholarly articles, reports, and videos.
Magneto-electric spin-orbit (MESO) is a technology designed for constructing scalable integrated circuits, that works with a different operating principle than CMOS devices such as MOSFETs, proposed by Intel, that is compatible with CMOS device manufacturing techniques and machinery.
Tsu-Jae King Liu is an American academic and engineer who serves as the Dean and the Roy W. Carlson Professor of Engineering at the UC Berkeley College of Engineering.
RF CMOS is a metal–oxide–semiconductor (MOS) integrated circuit (IC) technology that integrates radio-frequency (RF), analog and digital electronics on a mixed-signal CMOS RF circuit chip. It is widely used in modern wireless telecommunications, such as cellular networks, Bluetooth, Wi-Fi, GPS receivers, broadcasting, vehicular communication systems, and the radio transceivers in all modern mobile phones and wireless networking devices. RF CMOS technology was pioneered by Pakistani engineer Asad Ali Abidi at UCLA during the late 1980s to early 1990s, and helped bring about the wireless revolution with the introduction of digital signal processing in wireless communications. The development and design of RF CMOS devices was enabled by van der Ziel's FET RF noise model, which was published in the early 1960s and remained largely forgotten until the 1990s.
In semiconductor manufacturing, the 2 nm process is the next MOSFET die shrink after the 3 nm process node.
Sasikanth Manipatruni is an American engineer and inventor in the fields of Computer engineering, Integrated circuit technology, Materials Engineering and semiconductor device fabrication. Manipatruni contributed to developments in silicon photonics, spintronics and quantum materials.
