Semiconductor device fabrication |
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MOSFET scaling (process nodes) |
Future
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The International Technology Roadmap for Semiconductors (ITRS) is a set of documents that was coordinated and organized by Semiconductor Research Corporation [1] and produced by a group of experts in the semiconductor industry. These experts were representative of the sponsoring organisations, including the Semiconductor Industry Associations of Taiwan, South Korea, the United States, Europe, Japan, and China.
As of 2017, ITRS is no longer being updated. Its successor is the International Roadmap for Devices and Systems.
The documents carried disclaimer: "The ITRS is devised and intended for technology assessment only and is without regard to any commercial considerations pertaining to individual products or equipment".
The documents represent best opinion on the directions of research and time-lines up to about 15 years into the future for the following areas of technology:
Constructing an integrated circuit, or any semiconductor device, requires a series of operations—photolithography, etching, metal deposition, and so on. As the industry evolved, each of these operations were typically performed by specialized machines built by a variety of commercial companies. This specialization may potentially make it difficult for the industry to advance, since in many cases it does no good for one company to introduce a new product if the other needed steps are not available around the same time. A technology roadmap can help this by giving an idea when a certain capability will be needed. Then each supplier can target this date for their piece of the puzzle. [2] [3] [4]
With the progressive externalization of production tools to the suppliers of specialized equipment, participants identified a need for a clear roadmap to anticipate the evolution of the market and to plan and control the technological needs of IC production. For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5]
In 1998, the SIA became closer to its European, Japanese, Korean, and Taiwanese counterparts by creating the first global roadmap: The International Technology Roadmap for Semiconductors (ITRS). This international group has (as of the 2003 edition) 936 companies which were affiliated with working groups within the ITRS. [6] The organization was divided into Technical Working Groups (TWGs) which eventually grew in number to 17, each focusing on a key element of the technology and associated supply chain. Traditionally, the ITRS roadmap was updated in even years, and completely revised in odd years. [7]
The last revision of the ITRS Roadmap was published in 2013. The methodology and the physics behind the scaling results for 2013 tables is described in transistor roadmap projection using predictive full-band atomistic modeling which covers double gate MOSFETs over the 15 years to 2028.
With the generally acknowledged sunsetting of Moore's law and, ITRS issuing in 2016 its final roadmap, a new initiative for a more generalized roadmapping was started through the IEEE's Rebooting Computing initiative, named the International Roadmap for Devices and Systems (IRDS). [8]
In April 2014, the ITRS committee announced it would be reorganizing the ITRS roadmap to better suit the needs of the industry. The plan was to take all the elements included in the 17 technical working groups and map them into seven focus topics: [7]
An integrated circuit (IC), also known as a microchip, computer chip, or simply chip, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips. It is a multiple-step photolithographic and physico-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies. The microprocessor and memory chips are VLSI devices.
Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship. It is an experience-curve law, a type of law quantifying efficiency gains from experience in production.
Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.
A mixed-signal integrated circuit is any integrated circuit that has both analog circuits and digital circuits on a single semiconductor die. Their usage has grown dramatically with the increased use of cell phones, telecommunications, portable electronics, and automobiles with electronics and digital sensors.
The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to transistors, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.
Multi-project chip (MPC), and multi-project wafer (MPW) semiconductor manufacturing arrangements allow customers to share tooling and microelectronics wafer fabrication cost between several designs or projects.
In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits. Compared to alternatives such as package-on-package, the interconnect and device density is substantially higher, and the length of the connections becomes shorter.
A three-dimensional integrated circuit is a MOS integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
The MASTAR is an analytical model of Metal-Oxide Semiconductor Field-Effect Transistors, developed using the voltage-doping transformation (VDT) technique. MASTAR offers good accuracy and continuity in current and its derivatives in all operation regimes of the MOSFET devices. The model has been successfully used in CAD/EDA simulation tools.
In integrated circuits, optical interconnects refers to any system of transmitting signals from one part of an integrated circuit to another using light. Optical interconnects have been the topic of study due to the high latency and power consumption incurred by conventional metal interconnects in transmitting electrical signals over long distances, such as in interconnects classed as global interconnects. The International Technology Roadmap for Semiconductors (ITRS) has highlighted interconnect scaling as a problem for the semiconductor industry.
The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.
Beyond CMOS refers to the possible future digital logic technologies beyond the scaling limits of CMOS technology. which limits device density and speeds due to heating effects.
The Task Force on Rebooting Computing (TFRC), housed within IEEE Computer Society, is the new home for the IEEE Rebooting Computing Initiative. Founded in 2013 by the IEEE Future Directions Committee, Rebooting Computing has provided an international, interdisciplinary environment where experts from a wide variety of computer-related fields can come together to explore novel approaches to future computing. IEEE Rebooting Computing began as a global initiative launched by IEEE that proposes to rethink the concept of computing through a holistic look at all aspects of computing, from the device itself to the user interface. As part of its work, IEEE Rebooting Computing provides access to various resources like conferences and educational events, feature and scholarly articles, reports, and videos.
Bijan Davari is an Iranian-American electrical engineer. He is an IBM Fellow and Vice President at IBM Thomas J Watson Research Center, Yorktown Hts, NY. His pioneering work in the miniaturization of semiconductor devices changed the world of computing. His research led to the first generation of voltage-scaled deep-submicron CMOS with sufficient performance to totally replace bipolar technology in IBM mainframes and enable new high-performance UNIX servers. As head of IBM’s Semiconductor Research Center (SRDC), he led IBM into the use of Copper interconnect, silicon on insulator (SOI), and Embedded DRAM before its rivals. He is a member of the U.S. National Academy of Engineering and is known for his seminal contributions to the field of CMOS technology. He is an IEEE Fellow, recipient of the J J Ebers Award in 2005 and IEEE Andrew S. Grove Award in 2010. At the present time, he leads the Next Generation Systems Area of research.
The International Roadmap for Devices and Systems, or IRDS, is a set of predictions about likely developments in electronic devices and systems. The IRDS was established in 2016 and is the successor to the International Technology Roadmap for Semiconductors. These predictions are intended to allow coordination of efforts across academia, manufacturers, equipment suppliers, and national research laboratories. The IEEE specifies the goals of the roadmap as:
Bruno Murari is an Italian inventor. During his career he has patented about 200 inventions in the field of circuit design, power technologies and MEMS devices. He is the only Italian to have received the Elmer A. Sperry Award, which is awarded to those who have distinguished themselves with proven engineering contributions to advance the field of transport. He was defined "legendary analog engineer" and "father" of the BCD technology.
RF CMOS is a metal–oxide–semiconductor (MOS) integrated circuit (IC) technology that integrates radio-frequency (RF), analog and digital electronics on a mixed-signal CMOS RF circuit chip. It is widely used in modern wireless telecommunications, such as cellular networks, Bluetooth, Wi-Fi, GPS receivers, broadcasting, vehicular communication systems, and the radio transceivers in all modern mobile phones and wireless networking devices. RF CMOS technology was pioneered by Pakistani engineer Asad Ali Abidi at UCLA during the late 1980s to early 1990s, and helped bring about the wireless revolution with the introduction of digital signal processing in wireless communications. The development and design of RF CMOS devices was enabled by van der Ziel's FET RF noise model, which was published in the early 1960s and remained largely forgotten until the 1990s.