Dry etching

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Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.

Contents

Applications

Dry etching is used in conjunction with photolithographic techniques to attack certain areas of a semiconductor surface in order to form recesses in material.

Applications include contact holes (which are contacts to the underlying semiconductor substrate), via holes (which are holes that are formed to provide an interconnect path between conductive layers in the layered semiconductor device), transistor gates for FinFET technology, or to otherwise remove portions of semiconductor layers where predominantly vertical sides are desired. Along with semiconductor manufacturing, micromachining and display production, the removal of organic residues by oxygen plasmas is sometimes correctly described as a dry etch process. The term plasma ashing can be used instead.

Dry etching is particularly useful for materials and semiconductors which are chemically resistant and could not be wet etched, such as silicon carbide or gallium nitride.

Low density plasma (LDP) is able to produce high energy reactions at a low energy cost in thanks to its low pressure, meaning dry etch requires a relatively small quantity of chemicals and electricity to function. Additionally, dry etch equipment tends to be an order of magnitude cheaper than photolithography equipment, so many manufacturers rely on dry etching strategies such as pitch doubling or quartering to gain advanced resolutions (14nm+) while needing less advanced photolithography tools.

Wet EtchingDry Etching
highly selectiveeasy to start and stop
no damage to substrateless sensitive to small changes in temperature
cheapermore repeatable
slowerfaster
may have anisotropies
fewer particles in environment

High aspect ratio structures

Dry etching is currently used in semiconductor fabrication processes due to its unique ability over wet etch to do anisotropic etching (removal of material) to create high aspect ratio structures (e.g. deep holes or capacitor trenches).

Hardware design

The dry etching hardware design basically involves a vacuum chamber, special gas delivery system, radio frequency (RF) waveform generator to supply power to the plasma, heated chuck to seat the wafer, and an exhaust system.

Design varies from manufacturers such as Tokyo Electronic, Applied Materials, and Lam. While all designs follow the same physical principles, the variety of designs target more specialized processing characteristics. For example, dry etch steps that come into contact with or form critical parts of the device may require higher levels of directionality, selectivity, and uniformity. The tradeoff is that more complex dry etch equipment comes at a higher cost to purchase and is more difficult to understand, more expensive to maintain, and may operate more slowly.

Dry etch equipment can control for process uniformity with several knobs. The chuck temperature can be varied to control the heat of the wafer across the radius of the wafer, which influences the rate of reactions and thus the etch rate across different regions of the wafer. The plasma uniformity can be controlled with plasma confinement, which may be controlled with a high speed magnet rotating around the chamber, variations in gas flow into the chamber and pump out of the chamber, or RF braiding around the chamber. These strategies vary per equipment manufacturer and intended application.

History

Dry etching process was invented by Stephen M. Irving who also invented the plasma etching process. [1] [2] The anisotropic dry etching process was developed by Hwa-Nien Yu at the IBM T.J. Watson Research Center in the early 1970s. It was used by Yu with Robert H. Dennard to fabricate the first micron-scale MOSFETs (metal-oxide-semiconductor field-effect transistors) in the 1970s. [3]

See also

Related Research Articles

Microelectromechanical systems Very small devices that incorporate moving components

Microelectromechanical systems (MEMS), also written as micro-electro-mechanical systems and the related micromechatronics and microsystems constitute the technology of microscopic devices, particularly those with moving parts. They merge at the nanoscale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines in Japan and microsystem technology (MST) in Europe.

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate. The photoresist either breaks down or hardens where it is exposed to light. The patterned film is then created by removing the softer parts of the coating with appropriate solvents.

Semiconductor device fabrication Manufacturing process used to create integrated circuits

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.

Reactive-ion etching Method used to relatively precisely remove material in a controlled and fine fashion

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.

Surface micromachining builds microstructures by deposition and etching structural layers over a substrate. This is different from Bulk micromachining, in which a silicon substrate wafer is selectively etched to produce structures.

Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in semiconductor device fabrication process. Examples include production of radio frequency (RF) amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer fabrication is used to build components with the necessary electrical structures.

Ion beam Beam of charged atoms (ions)

An ion beam is a type of charged particle beam consisting of ions. Ion beams have many uses in electronics manufacturing and other industries. A variety of ion beam sources exists, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most common ion beams are of singly-charged ions.

In semiconductor fabrication, a resist is a thin layer used to transfer a circuit pattern to the semiconductor substrate which it is deposited upon. A resist can be patterned via lithography to form a (sub)micrometer-scale, temporary mask that protects selected areas of the underlying substrate during subsequent processing steps. The material used to prepare said thin layer is typically a viscous solution. Resists are generally proprietary mixtures of a polymer or its precursor and other small molecules that have been specially formulated for a given lithography technology. Resists used during photolithography are called photoresists.

Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon vias (TSVs) in advanced 3D wafer level packaging technology. In DRIE, the substrate is placed inside a reactor, and several gases are introduced. A plasma is struck in the gas mixture which breaks the gas molecules into ions. The ions accelerated towards, and react with the surface of the material being etched, forming another gaseous element. This is known as the chemical part of the reactive ion etching. There is also a physical part, if ions have enough energy, they can knock atoms out of the material to be etched without chemical reaction.

Microfabrication

Microfabrication is the process of fabricating miniature structures of micrometre scales and smaller. Historically, the earliest microfabrication processes were used for integrated circuit fabrication, also known as "semiconductor manufacturing" or "semiconductor device fabrication". In the last two decades microelectromechanical systems (MEMS), microsystems, micromachines and their subfields, microfluidics/lab-on-a-chip, optical MEMS, RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale have re-used, adapted or extended microfabrication methods. Flat-panel displays and solar cells are also using similar techniques.

Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral. During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.

Lam Research American semiconductor equipment company

Lam Research Corporation is an American supplier of wafer fabrication equipment and related services to the semiconductor industry. Its products are used primarily in front-end wafer processing, which involves the steps that create the active components of semiconductor devices and their wiring (interconnects). The company also builds equipment for back-end wafer-level packaging (WLP) and for related manufacturing markets such as for microelectromechanical systems (MEMS).

In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing feature whereby the gate electrode of a MOSFET is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain.

Etching (microfabrication) Technique in microfabrication used to remove material and create structures

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.

ASM International Dutch ininformation technology company

ASM International is a Dutch headquartered multinational corporation that specializes in design, manufacturing, sales and service of semiconductor wafer processing equipment for the fabrication of semiconductor devices. ASM's products are used by semiconductor manufacturers in front-end wafer processing in their semiconductor fabrication plants. ASM’s technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion.

Veeco American manufacturing company

Veeco is a global capital equipment supplier, headquartered in the U.S., that designs and builds processing systems used in semiconductor and compound semiconductor manufacturing, data storage and scientific markets for applications such as advanced packaging, photonics, power electronics and display technologies.

Tokyo Electron Japanese semiconductor equipment manufacturer

Tokyo Electron Limited, or TEL, is a Japanese electronics and semiconductor company headquartered in Akasaka, Minato-ku, Tokyo, Japan. The company was founded as Tokyo Electron Laboratories, Inc. in 1963.

Metal assisted chemical etching

Metal Assisted Chemical Etching is the process of wet chemical etching of semiconductors with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles. The semiconductor, covered with the metal is then immersed in an etching solution containing and oxidizing agent and hydrofluoric acid. The metal on the surface catalyzes the reduction of the oxidizing agent and therefore in turn also the dissolution of silicon. In the majority of the conducted research this phenomenon of increased dissolution rate is also spatially confined, such that it is increased in close proximity to a metal particle at the surface. Eventually this leads to the formation of straight pores that are etched into the semiconductor. This means that a pre-defined pattern of the metal on the surface can be directly transferred to a semiconductor substrate.

Glossary of microelectronics manufacturing terms

References

  1. Irving S. (1967). "A Dry Photoresist Removal Method". Journal of the Electrochemical Society.
  2. Irving S. (1968). "A Dry Photoresist Removal Method". Kodak Photoresist Seminar Proceedings.
  3. Critchlow, D. L. (2007). "Recollections on MOSFET Scaling". IEEE Solid-State Circuits Society Newsletter. 12 (1): 19–22. doi: 10.1109/N-SSC.2007.4785536 .