A hydrogen sensor is a gas detector that detects the presence of hydrogen. They contain micro-fabricated point-contact hydrogen sensors and are used to locate hydrogen leaks. They are considered low-cost, compact, durable, and easy to maintain as compared to conventional gas detecting instruments. [1]
There are five key issues with hydrogen detectors: [2]
There are various types of hydrogen microsensors, which use different mechanisms to detect the gas. [4] Palladium is used in many of these, because it selectively absorbs hydrogen gas and forms the compound palladium hydride. [5] Palladium-based sensors have a strong temperature dependence which makes their response time too large at very low temperatures. [6] Palladium sensors have to be protected against carbon monoxide, sulfur dioxide and hydrogen sulfide.
Several types of optical fibre surface plasmon resonance (SPR) sensor are used for the point-contact detection of hydrogen:
Sensors are typically calibrated at the manufacturing factory and are valid for the service life of the unit.
Siloxane enhances the sensitivity and reaction time of hydrogen sensors. [5] Detection of hydrogen levels as low as 25 ppm can be achieved; far below hydrogen's lower explosive limit of around 40,000 ppm.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
MEMS is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size, and MEMS devices generally range in size from 20 micrometres to a millimetre, although components arranged in arrays can be more than 1000 mm2. They usually consist of a central unit that processes data and several components that interact with the surroundings.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
A sensor is a device that produces an output signal for the purpose of detecting a physical phenomenon.
Palladium hydride is palladium metal with hydrogen within its crystal lattice. Despite its name, it is not an ionic hydride but rather an alloy of palladium with metallic hydrogen that can be written PdHx. At room temperature, palladium hydrides may contain two crystalline phases, α and β. Pure α-phase exists at x < 0.017 while pure β-phase exists at x > 0.58; intermediate values of x correspond to α–β mixtures.
Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There are a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically use a p–n junction that converts photons into charge. The absorbed photons make electron–hole pairs in the depletion region. Photodiodes and photo transistors are a few examples of photo detectors. Solar cells convert some of the light energy absorbed into electrical energy.
An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. Invented in 1970, the ISFET was the first biosensor FET (BioFET).
Microfabrication is the process of fabricating miniature structures of micrometre scales and smaller. Historically, the earliest microfabrication processes were used for integrated circuit fabrication, also known as "semiconductor manufacturing" or "semiconductor device fabrication". In the last two decades, microelectromechanical systems (MEMS), microsystems, micromachines and their subfields have re-used, adapted or extended microfabrication methods. These subfields include microfluidics/lab-on-a-chip, optical MEMS, RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale. The production of flat-panel displays and solar cells also uses similar techniques.
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. When the target analyte concentration changes, the current through the transistor will change accordingly. Here, the analyte solution separates the source and gate electrodes. A concentration gradient between the solution and the gate electrode arises due to a semi-permeable membrane on the FET surface containing receptor moieties that preferentially bind the target analyte. This concentration gradient of charged analyte ions creates a chemical potential between the source and gate, which is in turn measured by the FET.
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga2O3. It is actively studied for applications in power electronics, phosphors, and gas sensing. The compound has several polymorphs, of which the monoclinic β-phase is the most stable. The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to GaN and SiC-based power electronics applications and solar-blind UV photodetectors. The orthorhombic ĸ-Ga2O3 is the second most stable polymorph. The ĸ-phase has shown instability of subsurface doping density under thermal exposure. Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to GaN and SiC, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt. β-Ga2O3 is thought to be radiation-hard, which makes it promising for military and space applications.
A carbon dioxide sensor or CO2 sensor is an instrument for the measurement of carbon dioxide gas. The most common principles for CO2 sensors are infrared gas sensors (NDIR) and chemical gas sensors. Measuring carbon dioxide is important in monitoring indoor air quality, the function of the lungs in the form of a capnograph device, and many industrial processes.
A gas detector is a device that detects the presence of gases in an area, often as part of a safety system. A gas detector can sound an alarm to operators in the area where the leak is occurring, giving them the opportunity to leave. This type of device is important because there are many gases that can be harmful to organic life, such as humans or animals.
Polyaniline nanofibers are a high aspect form of polyaniline, a polymer consisting of aniline monomers, which appears as discrete long threads with an average diameter between 30 nm and 100 nm. Polyaniline is one of the oldest known conducting polymers, being known for over 150 years. Polyaniline nanofibers are often studied for their potential to enhance the properties of polyaniline or have additional beneficial properties due to the addition of a nanostructure to the polymer. Properties that make polyaniline useful can be seen in the nanofiber form as well, such as facile synthesis, environmental stability, and simple acid/base doping/dedoping chemistry. These and other properties have led to the formation of various applications for polyaniline nanofibers as actuators, memory devices, and sensors.
Hydrogen sulfide (H2S) is a noxious gas characterized by its distinctive stench reminiscent of rotten eggs. It goes by several colloquial names, including sewer gas, stink damp, swamp gas, and manure gas. This gas naturally occurs in crude petroleum, natural gas, hot springs, and certain food items. In the natural world, H2S is a common byproduct of the decomposition of organic matter, such as human and animal waste, in septic and sewer systems due to bacterial processes. Additionally, it is industrially produced in significant quantities through activities and facilities like petroleum and natural gas extraction, refining, wastewater treatment, coke ovens, tanneries, kraft paper mills, and landfills.
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits.
A chemiresistor is a material that changes its electrical resistance in response to changes in the nearby chemical environment. Chemiresistors are a class of chemical sensors that rely on the direct chemical interaction between the sensing material and the analyte. The sensing material and the analyte can interact by covalent bonding, hydrogen bonding, or molecular recognition. Several different materials have chemiresistor properties: semiconducting metal oxides, some conductive polymers, and nanomaterials like graphene, carbon nanotubes and nanoparticles. Typically these materials are used as partially selective sensors in devices like electronic tongues or electronic noses.
A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor, field-effect biosensor (FEB), or biosensor MOSFET, is a field-effect transistor that is gated by changes in the surface potential induced by the binding of molecules. When charged molecules, such as biomolecules, bind to the FET gate, which is usually a dielectric material, they can change the charge distribution of the underlying semiconductor material resulting in a change in conductance of the FET channel. A Bio-FET consists of two main compartments: one is the biological recognition element and the other is the field-effect transistor. The BioFET structure is largely based on the ion-sensitive field-effect transistor (ISFET), a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the metal gate is replaced by an ion-sensitive membrane, electrolyte solution, and reference electrode.
Platinum diselenide is a transition metal dichalcogenide with the formula PtSe2. It is a layered substance that can be split into layers down to three atoms thick. PtSe2 can behave as a metalloid or as a semiconductor depending on the thickness.
A chemical sensor array is a sensor architecture with multiple sensor components that create a pattern for analyte detection from the additive responses of individual sensor components. There exist several types of chemical sensor arrays including electronic, optical, acoustic wave, and potentiometric devices. These chemical sensor arrays can employ multiple sensor types that are cross-reactive or tuned to sense specific analytes.
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