A high-voltage direct current (HVDC) electric power transmission system uses direct current (DC) for electric power transmission, in contrast with the more common alternating current (AC) transmission systems.
A rectifier is an electrical device that converts alternating current (AC), which periodically reverses direction, to direct current (DC), which flows in only one direction. The reverse operation is performed by an inverter.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch, conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reverse-biased, or until the voltage is removed. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large.
A power inverter, inverter or invertor is a power electronic device or circuitry that changes direct current (DC) to alternating current (AC). The resulting AC frequency obtained depends on the particular device employed. Inverters do the opposite of rectifiers which were originally large electromechanical devices converting AC to DC.
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
A TRIAC is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
Power electronics is the application of electronics to the control and conversion of electric power.
An HVDC converter station is a specialised type of substation which forms the terminal equipment for a high-voltage direct current (HVDC) transmission line. It converts direct current to alternating current or the reverse. In addition to the converter, the station usually contains:
A variable-frequency drive, variable-speed drives, AC drives, micro drives, inverter drives, or drives) is a type of AC motor drive that controls speed and torque by varying the frequency of the input electricity. Depending on its topology, it controls the associated voltage or current variation.
An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements.
An H-bridge is an electronic circuit that switches the polarity of a voltage applied to a load. These circuits are often used in robotics and other applications to allow DC motors to run forwards or backwards. The name is derived from its common schematic diagram representation, with four switching elements configured as the branches of a letter "H" and the load connected as the cross-bar.
A power module or power electronic module provides the physical containment for several power components, usually power semiconductor devices. These power semiconductors are typically soldered or sintered on a power electronic substrate that carries the power semiconductors, provides electrical and thermal contact and electrical insulation where needed. Compared to discrete power semiconductors in plastic housings as TO-247 or TO-220, power packages provide a higher power density and are in many cases more reliable.
A solid state relay (SSR) is an electronic switching device that switches on or off when an external voltage is applied across its control terminals. They serve the same function as an electromechanical relay, but solid-state electronics contain no moving parts and have a longer operational lifetime. Solid state relays were invented in 1971 by the Crydom Controls division of International Rectifiers. After a number of corporate acquisitions, Crydom is now part of Sensata.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. It was invented by General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
The current injection technique is a technique developed to reduce the turn-OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University in 2007.
The following outline is provided as an overview of and topical guide to electronics:
An HVDC converter converts electric power from high voltage alternating current (AC) to high-voltage direct current (HVDC), or vice versa. HVDC is used as an alternative to AC for transmitting electrical energy over long distances or between AC power systems of different frequencies. HVDC converters capable of converting up to two gigawatts (GW) and with voltage ratings of up to 900 kilovolts (kV) have been built, and even higher ratings are technically feasible. A complete converter station may contain several such converters in series and/or parallel to achieve total system DC voltage ratings of up to 1,100 kV.
This glossary of power electronics is a list of definitions of terms and concepts related to power electronics in general and power electronic capacitors in particular. For more definitions in electric engineering, see Glossary of electrical and electronics engineering. For terms related to engineering in general, see Glossary of engineering.
