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An integrated circuit (IC), also known as a microchip, computer chip, or simply chip, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Nanotechnology is the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm). At this scale, commonly known as the nanoscale, surface area and quantum mechanical effects become important in describing properties of matter. This definition of nanotechnology includes all types of research and technologies that deal with these special properties. It is common to see the plural form "nanotechnologies" as well as "nanoscale technologies" to refer to research and applications whose common trait is scale. An earlier understanding of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabricating macroscale products, now referred to as molecular nanotechnology.
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips. It is a multiple-step photolithographic and physico-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship. It is an experience-curve law, a type of law quantifying efficiency gains from experience in production.
Complementary metal–oxide–semiconductor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 m). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires".
Miniaturization is the trend to manufacture ever-smaller mechanical, optical, and electronic products and devices. Examples include miniaturization of mobile phones, computers and vehicle engine downsizing. In electronics, the exponential scaling and miniaturization of silicon MOSFETs leads to the number of transistors on an integrated circuit chip doubling every two years, an observation known as Moore's law. This leads to MOS integrated circuits such as microprocessors and memory chips being built with increasing transistor density, faster performance, and lower power consumption, enabling the miniaturization of electronic devices.
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.
The 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
Nanolithography (NL) is a growing field of techniques within nanotechnology dealing with the engineering of nanometer-scale structures on various materials.
The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. The typical half-pitch for a memory cell using the process is around 22 nm. It was first demonstrated by semiconductor companies for use in RAM memory in 2008. In 2010, Toshiba began shipping 24 nm flash memory chips, and Samsung Electronics began mass-producing 20 nm flash memory chips. The first consumer-level CPU deliveries using a 22 nm process started in April 2012 with the Intel Ivy Bridge processors.
The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" node. The "14 nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22 nm" was expected to be "16 nm". All "14 nm" nodes use FinFET technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology.
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires or advanced molecular electronics.
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.
Nanocircuits are electrical circuits operating on the nanometer scale where quantum mechanical effects become important. One nanometer is equal to 10−9 meters or a row of 10 hydrogen atoms. With such progressively smaller circuits, more can be fitted on a computer chip. This allows faster and more complex functions using less power. Nanocircuits are composed of three different fundamental components. These are transistors, interconnections, and architecture, all fabricated on the nanometer scale.
Mesoscopic physics is a subdiscipline of condensed matter physics that deals with materials of an intermediate size. These materials range in size between the nanoscale for a quantity of atoms and of materials measuring micrometres. The lower limit can also be defined as being the size of individual atoms. At the microscopic scale are bulk materials. Both mesoscopic and macroscopic objects contain many atoms. Whereas average properties derived from constituent materials describe macroscopic objects, as they usually obey the laws of classical mechanics, a mesoscopic object, by contrast, is affected by thermal fluctuations around the average, and its electronic behavior may require modeling at the level of quantum mechanics.
The following outline is provided as an overview of and topical guide to nanotechnology:
In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the "5 nm" process as the MOSFET technology node following the "7 nm" node. In 2020, Samsung and TSMC entered volume production of "5 nm" chips, manufactured for companies including Apple, Huawei, Mediatek, Qualcomm and Marvell.
The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.
This glossary of nanotechnology is a list of definitions of terms and concepts relevant to nanotechnology, its sub-disciplines, and related fields.
References
- ↑ Waldner, Jean-Baptiste (2007). Nanocomputers and Swarm Intelligence. London: ISTE. pp. 173–176. ISBN 978-1847040022.
- ↑ Ellenbogen, J.. (1998). A Brief Overview of Nanoelectronic Devices. Retrieved August 3, 2006 from http://www.mitre.org/tech/nanotech/ourwork/nano_papers.html#nanoelectronics
- ↑ Kelion, Leo (2012). "Intel's Ivy Bridge chips launch using '3D transistors'". BBC . Retrieved 19 April 2013.
- ↑ "WebElements Periodic Table » Silicon » radii of atoms and ions".
