Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L (roughly 11 times heavier than air.) It is one of the densest known gases under standard conditions. WF6 is commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.
A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, Integrated passive devices, LEDs, optical coatings, hard coatings on cutting tools, and for both energy generation and storage. It is also being applied to pharmaceuticals, via thin-film drug delivery. A stack of thin films is called a multilayer.
Ion plating (IP) is a physical vapor deposition (PVD) process that is sometimes called ion assisted deposition (IAD) or ion vapor deposition (IVD) and is a version of vacuum deposition. Ion plating uses concurrent or periodic bombardment of the substrate, and deposits film by atomic-sized energetic particles. Bombardment prior to deposition is used to sputter clean the substrate surface. During deposition the bombardment is used to modify and control the properties of the depositing film. It is important that the bombardment be continuous between the cleaning and the deposition portions of the process to maintain an atomically clean interface.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3N
4 is the most thermodynamically stable and commercially important of the silicon nitrides, and the term "silicon nitride" commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
3PO
4. It is very hard. It has a high thermal stability with strong optical nonlinearities for all-optical applications.
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.
Parylene is the common name of a polymer whose backbone consists of para-benzenediyl rings –C
6H
4– connected by 1,2-ethanediyl bridges –CH
2–CH
2–. It can be obtained by polymerization of para-xylyleneH
2C=C
6H
4=CH
2.
Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber with a thin layer of the anode material.
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure. The deposited layers can range from a thickness of one atom up to millimeters, forming freestanding structures. Multiple layers of different materials can be used, for example to form optical coatings. The process can be qualified based on the vapor source; physical vapor deposition uses a liquid or solid source and chemical vapor deposition uses a chemical vapor.
Bis(trimethylsilyl)amine (also known as hexamethyldisilazane and HMDS) is an organosilicon compound with the molecular formula [(CH3)3Si]2NH. The molecule is a derivative of ammonia with trimethylsilyl groups in place of two hydrogen atoms. An electron diffraction study shows that silicon-nitrogen bond length (173.5 pm) and Si-N-Si bond angle (125.5°) to be similar to disilazane (in which methyl groups are replaced by hydrogen atoms) suggesting that steric factors are not a factor in regulating angles in this case. This colorless liquid is a reagent and a precursor to bases that are popular in organic synthesis and organometallic chemistry. Additionally, HMDS is also increasingly used as molecular precursor in chemical vapor deposition techniques to deposit silicon carbonitride thin films or coatings.
Thermal barrier coatings (TBCs) are advanced materials systems usually applied to metallic surfaces operating at elevated temperatures, such as gas turbine or aero-engine parts, as a form of exhaust heat management. These 100 μm to 2 mm thick coatings of thermally insulating materials serve to insulate components from large and prolonged heat loads and can sustain an appreciable temperature difference between the load-bearing alloys and the coating surface. In doing so, these coatings can allow for higher operating temperatures while limiting the thermal exposure of structural components, extending part life by reducing oxidation and thermal fatigue. In conjunction with active film cooling, TBCs permit working fluid temperatures higher than the melting point of the metal airfoil in some turbine applications. Due to increasing demand for more efficient engines running at higher temperatures with better durability/lifetime and thinner coatings to reduce parasitic mass for rotating/moving components, there is significant motivation to develop new and advanced TBCs. The material requirements of TBCs are similar to those of heat shields, although in the latter application emissivity tends to be of greater importance.
CFD-ACE+ is a commercial computational fluid dynamics solver developed by ESI Group. It solves the conservation equations of mass, momentum, energy, chemical species and other scalar transport equations using the finite volume method. These equations enable coupled simulations of fluid, thermal, chemical, biological, electrical and mechanical phenomena.
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.
Solution precursor plasma spray (SPPS) is a thermal spray process where a feedstock solution is heated and then deposited onto a substrate. Basic properties of the process are fundamentally similar to other plasma spraying processes. However, instead of injecting a powder into the plasma plume, a liquid precursor is used. The benefits of utilizing the SPPS process include the ability to create unique nanometer sized microstructures without the injection feed problems normally associated with powder systems and flexible, rapid exploration of novel precursor compositions.
Chemical vapour infiltration (CVI) is a ceramic engineering process whereby matrix material is infiltrated into fibrous preforms by the use of reactive gases at elevated temperature to form fiber-reinforced composites. The earliest use of CVI was the infiltration of fibrous alumina with chromium carbide. CVI can be applied to the production of carbon-carbon composites and ceramic-matrix composites. A similar technique is chemical vapour deposition (CVD), the main difference being that the deposition of CVD is on hot bulk surfaces, while CVI deposition is on porous substrates.
The vapor–liquid–solid method (VLS) is a mechanism for the growth of one-dimensional structures, such as nanowires, from chemical vapor deposition. The growth of a crystal through direct adsorption of a gas phase on to a solid surface is generally very slow. The VLS mechanism circumvents this by introducing a catalytic liquid alloy phase which can rapidly adsorb a vapor to supersaturation levels, and from which crystal growth can subsequently occur from nucleated seeds at the liquid–solid interface. The physical characteristics of nanowires grown in this manner depend, in a controllable way, upon the size and physical properties of the liquid alloy.
Combustion chemical vapor deposition (CCVD) is a chemical process by which thin-film coatings are deposited onto substrates in the open atmosphere.
Vertically aligned carbon nanotube arrays (VANTAs) are a unique microstructure consisting of carbon nanotubes oriented with their longitudinal axis perpendicular to a substrate surface. These VANTAs effectively preserve and often accentuate the unique anisotropic properties of individual carbon nanotubes and possess a morphology that may be precisely controlled. VANTAs are consequently widely useful in a range of current and potential device applications.
Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor films. A remote low energy, high density DC argon plasma is employed to efficiently decompose the gas phase precursors while leaving the epitaxial layer undamaged, resulting in high quality epilayers and high deposition rates.
