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A scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm depth resolution. This means that individual atoms can routinely be imaged and manipulated. Most microscopes are built for use in ultra-high vacuum at temperatures approaching zero kelvin, but variants exist for studies in air, water and other environments, and for temperatures over 1000 °C.
Photocurrent is the electric current through a photosensitive device, such as a photodiode, as the result of exposure to radiant power. The photocurrent may occur as a result of the photoelectric, photoemissive, or photovoltaic effect. The photocurrent may be enhanced by internal gain caused by interaction among ions and photons under the influence of applied fields, such as occurs in an avalanche photodiode (APD).
Cathodoluminescence is an optical and electromagnetic phenomenon in which electrons impacting on a luminescent material such as a phosphor, cause the emission of photons which may have wavelengths in the visible spectrum. A familiar example is the generation of light by an electron beam scanning the phosphor-coated inner surface of the screen of a television that uses a cathode ray tube. Cathodoluminescence is the inverse of the photoelectric effect, in which electron emission is induced by irradiation with photons.
Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit.
Scanning probe microscopy (SPM) is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. SPM was founded in 1981, with the invention of the scanning tunneling microscope, an instrument for imaging surfaces at the atomic level. The first successful scanning tunneling microscope experiment was done by Gerd Binnig and Heinrich Rohrer. The key to their success was using a feedback loop to regulate gap distance between the sample and the probe.
Scanning voltage microscopy (SVM), sometimes also called nanopotentiometry, is a scientific experimental technique based on atomic force microscopy. A conductive probe, usually only a few nanometers wide at the tip, is placed in full contact with an operational electronic or optoelectronic sample. By connecting the probe to a high-impedance voltmeter and rastering over the sample's surface, a map of the electric potential can be acquired. SVM is generally nondestructive to the sample although some damage may occur to the sample or the probe if the pressure required to maintain good electrical contact is too high. If the input impedance of the voltmeter is sufficiently large, the SVM probe should not perturb the operation of the operational sample.
Kelvin probe force microscopy (KPFM), also known as surface potential microscopy, is a noncontact variant of atomic force microscopy (AFM). By raster scanning in the x,y plane the work function of the sample can be locally mapped for correlation with sample features. When there is little or no magnification, this approach can be described as using a scanning Kelvin probe (SKP). These techniques are predominantly used to measure corrosion and coatings.
Scanning probe lithography (SPL) describes a set of nanolithographic methods to pattern material on the nanoscale using scanning probes. It is a direct-write, mask-less approach which bypasses the diffraction limit and can reach resolutions below 10 nm. It is considered an alternative lithographic technology often used in academic and research environments. The term scanning probe lithography was coined after the first patterning experiments with scanning probe microscopes (SPM) in the late 1980s.
Scanning capacitance microscopy (SCM) is a variety of scanning probe microscopy in which a narrow probe electrode is positioned in contact or close proximity of a sample's surface and scanned. SCM characterizes the surface of the sample using information obtained from the change in electrostatic capacitance between the surface and the probe.
Scanning Hall probe microscope (SHPM) is a variety of a scanning probe microscope which incorporates accurate sample approach and positioning of the scanning tunnelling microscope with a semiconductor Hall sensor. Developed in 1996 by Oral, Bending and Henini, SHPM allows mapping the magnetic induction associated with a sample. Current state of the art SHPM systems utilize 2D electron gas materials to provide high spatial resolution (~300 nm) imaging with high magnetic field sensitivity. Unlike the magnetic force microscope the SHPM provides direct quantitative information on the magnetic state of a material. The SHPM can also image magnetic induction under applied fields up to ~1 tesla and over a wide range of temperatures.
Scanning thermal microscopy (SThM) is a type of scanning probe microscopy that maps the local temperature and thermal conductivity of an interface. The probe in a scanning thermal microscope is sensitive to local temperatures – providing a nano-scale thermometer. Thermal measurements at the nanometer scale are of both scientific and industrial interest.
Conductive atomic force microscopy (C-AFM) or current sensing atomic force microscopy (CS-AFM) is a mode in atomic force microscopy (AFM) that simultaneously measures the topography of a material and the electric current flow at the contact point of the tip with the surface of the sample. The topography is measured by detecting the deflection of the cantilever using an optical system, while the current is detected using a current-to-voltage preamplifier. The fact that the CAFM uses two different detection systems is a strong advantage compared to scanning tunneling microscopy (STM). Basically, in STM the topography picture is constructed based on the current flowing between the tip and the sample. Therefore, when a portion of a sample is scanned with an STM, it is not possible to discern if the current fluctuations are related to a change in the topography or to a change in the sample conductivity.
Andrew James Fisher is Professor of Physics in the Department of Physics and Astronomy at University College London. His team is part of the Condensed Matter and Materials Physics group, and based in the London Centre for Nanotechnology.
Photoconductive atomic force microscopy (PC-AFM) is a variant of atomic force microscopy that measures photoconductivity in addition to surface forces.
The technique of vibrational analysis with scanning probe microscopy allows probing vibrational properties of materials at the submicrometer scale, and even of individual molecules. This is accomplished by integrating scanning probe microscopy (SPM) and vibrational spectroscopy. This combination allows for much higher spatial resolution than can be achieved with conventional Raman/FTIR instrumentation. The technique is also nondestructive, requires non-extensive sample preparation, and provides more contrast such as intensity contrast, polarization contrast and wavelength contrast, as well as providing specific chemical information and topography images simultaneously.
Non-contact atomic force microscopy (nc-AFM), also known as dynamic force microscopy (DFM), is a mode of atomic force microscopy, which itself is a type of scanning probe microscopy. In nc-AFM a sharp probe is moved close to the surface under study, the probe is then raster scanned across the surface, the image is then constructed from the force interactions during the scan. The probe is connected to a resonator, usually a silicon cantilever or a quartz crystal resonator. During measurements the sensor is driven so that it oscillates. The force interactions are measured either by measuring the change in amplitude of the oscillation at a constant frequency just off resonance or by measuring the change in resonant frequency directly using a feedback circuit to always drive the sensor on resonance.
The operation of a photon scanning tunneling microscope (PSTM) is analogous to the operation of an electron scanning tunneling microscope, with the primary distinction being that PSTM involves tunneling of photons instead of electrons from the sample surface to the probe tip. A beam of light is focused on a prism at an angle greater than the critical angle of the refractive medium in order to induce total internal reflection within the prism. Although the beam of light is not propagated through the surface of the refractive prism under total internal reflection, an evanescent field of light is still present at the surface.
Photo-reflectance is an optical technique for investigating the material and electronic properties of thin films. Photo-reflectance measures the change in reflectivity of a sample in response to the application of an amplitude modulated light beam. In general, a photo-reflectometer consists of an intensity modulated "pump" light beam used to modulate the reflectivity of the sample, a second "probe" light beam used to measure the reflectance of the sample, an optical system for directing the pump and probe beams to the sample, and for directing the reflected probe light onto a photodetector, and a signal processor to record the differential reflectance. The pump light is typically modulated at a known frequency so that a lock-in amplifier may be used to suppress unwanted noise, resulting in the ability to detect reflectance changes at the ppm level.
Multi-tip scanning tunneling microscopy extends scanning tunneling microscopy (STM) from imaging to dedicated electrical measurements at the nanoscale like a ″multimeter at the nanoscale″. In materials science, nanoscience, and nanotechnology, it is desirable to measure electrical properties at a particular position of the sample. For this purpose, multi-tip STMs in which several tips are operated independently have been developed. Apart from imaging the sample, the tips of a multi-tip STM are used to form contacts to the sample at desired locations and to perform local electrical measurements.
Scanning Quantum Dot Microscopy
References
- ↑ Sellier, H; Hackens, B; Pala, M G; Martins, F; Baltazar, S; Wallart, X; Desplanque, L; Bayot, V; Huant, S (2011). "On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations". Semiconductor Science and Technology. 26 (6): 064008. arXiv: 1104.2032 . Bibcode:2011SeScT..26f4008S. doi:10.1088/0268-1242/26/6/064008. ISSN 0268-1242.
- ↑ Gorini, Cosimo; Jalabert, Rodolfo A.; Szewc, Wojciech; Tomsovic, Steven; Weinmann, Dietmar (2013). "Theory of scanning gate microscopy". Physical Review B. 88 (3). arXiv: 1302.1151 . Bibcode:2013PhRvB..88c5406G. doi:10.1103/PhysRevB.88.035406. ISSN 1098-0121.
