In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits. Compared to alternatives such as package-on-package, the interconnect and device density is substantially higher, and the length of the connections becomes shorter.
Dictated by the manufacturing process, there exist three different types of TSVs: via-first TSVs are fabricated before the individual component (transistors, capacitors, resistors, etc.) are patterned (front end of line, FEOL), via-middle TSVs are fabricated after the individual component are patterned but before the metal layers (back-end-of-line, BEOL), and via-last TSVs are fabricated after (or during) the BEOL process. [1] [2] Via-middle TSVs are currently a popular option for advanced 3D ICs as well as for interposer stacks. [2] [3]
TSVs through the front end of line (FEOL) have to be carefully accounted for during the EDA and manufacturing phases. That is because TSVs induce thermo-mechanical stress in the FEOL layer, thereby impacting the transistor behaviour. [4]
CMOS image sensors (CIS) were among the first applications to adopt TSV(s) in volume manufacturing. In initial CIS applications, TSVs were formed on the backside of the image sensor wafer to form interconnects, eliminate wire bonds, and allow for reduced form factor and higher-density interconnects. Chip stacking came about only with the advent of backside illuminated (BSI) CIS, and involved reversing the order of the lens, circuitry, and photodiode from traditional front-side illumination so that the light coming through the lens first hits the photodiode and then the circuitry. This was accomplished by flipping the photodiode wafer, thinning the backside, and then bonding it on top of the readout layer using a direct oxide bond, with TSVs as interconnects around the perimeter. [5]
A 3D package (System in Package, Chip Stack MCM, etc.) contains two or more chips (integrated circuits) stacked vertically so that they occupy less space and/or have greater connectivity. An alternate type of 3D package can be found in IBM's Silicon Carrier Packaging Technology, where ICs are not stacked but a carrier substrate containing TSVs is used to connect multiple ICs together in a package. In most 3D packages, the stacked chips are wired together along their edges; this edge wiring slightly increases the length and width of the package and usually requires an extra “interposer” layer between the chips. In some new 3D packages, TSVs replace edge wiring by creating vertical connections through the body of the chips. The resulting package has no added length or width. Because no interposer is required, a TSV 3D package can also be flatter than an edge-wired 3D package. This TSV technique is sometimes also referred to as TSS (Through-Silicon Stacking or Thru-Silicon Stacking).
A 3D integrated circuit (3D IC) is a single integrated circuit built by stacking silicon wafers and/or dies and interconnecting them vertically so that they behave as a single device. By using TSV technology, 3D ICs can pack a great deal of functionality into a small “footprint.” The different devices in the stack may be heterogeneous, e.g. combining CMOS logic, DRAM and III-V materials into a single IC. In addition, critical electrical paths through the device can be drastically shortened, leading to faster operation. The Wide I/O 3D DRAM memory standard (JEDEC JESD229) includes TSV in the design. [6]
The origins of the TSV concept can be traced back to William Shockley's patent "Semiconductive Wafer and Method of Making the Same" filed in 1958 and granted in 1962, [7] [8] which was further developed by IBM researchers Merlin Smith and Emanuel Stern with their patent "Methods of Making Thru-Connections in Semiconductor Wafers" filed in 1964 and granted in 1967, [9] [10] the latter describing a method for etching a hole through silicon. [11] TSV was not originally designed for 3D integration, but the first 3D chips based on TSV were invented later in the 1980s. [12]
The first three-dimensional integrated circuit (3D IC) stacked chips fabricated with a TSV process were invented in 1980s Japan. Hitachi filed a Japanese patent in 1983, followed by Fujitsu in 1984. In 1986, Fujitsu filed a Japanese patent describing a stacked chip structure using TSV. [13] In 1989, Mitsumasa Koyonagi of Tohoku University pioneered the technique of wafer-to-wafer bonding with TSV, which he used to fabricate a 3D LSI chip in 1989. [13] [14] [15] In 1999, the Association of Super-Advanced Electronics Technologies (ASET) in Japan began funding the development of 3D IC chips using TSV technology, called the "R&D on High Density Electronic System Integration Technology" project. [13] [16] The Koyanagi Group at Tohoku University used TSV technology to fabricate a three-layer stacked image sensor chip in 1999, a three-layer memory chip in 2000, a three-layer artificial retina chip in 2001, a three-layer microprocessor in 2002, and a ten-layer memory chip in 2005. [14]
The inter-chip via (ICV) method was developed in 1997 by a Fraunhofer – Siemens research team including Peter Ramm, D. Bollmann, R. Braun, R. Buchner, U. Cao-Minh, Manfred Engelhardt and Armin Klumpp. [17] It was a variation of the TSV process, and was later called SLID (solid liquid inter-diffusion) technology. [18]
The term "through-silicon via" (TSV) was coined by Tru-Si Technologies researchers Sergey Savastiouk, O. Siniaguine, and E. Korczynski, who proposed a TSV method for a 3D wafer-level packaging (WLP) solution in 2000. [19]
CMOS image sensors utilising TSV were commercialized by companies including Toshiba, Aptina and STMicroelectronics during 2007–2008, with Toshiba naming their technology "Through Chip Via" (TCV). 3D-stacked random-access memory (RAM) was commercialized by Elpida Memory, which developed the first 8 GB DRAM chip (stacked with four DDR3 SDRAM dies) in September 2009, and released it in June 2011. TSMC announced plans for 3D IC production with TSV technology in January 2010. [20] In 2011, SK Hynix introduced 16 GB DDR3 SDRAM (40 nm class) using TSV technology, [21] Samsung Electronics introduced 3D-stacked 32 GB DDR3 (30 nm class) based on TSV in September, and then Samsung and Micron Technology announced TSV-based Hybrid Memory Cube (HMC) technology in October. [20] SK Hynix manufactured the first High Bandwidth Memory (HBM) chip, based on TSV technology, in 2013. [21] The via middle technology was developed by imec under vision of Eric Beyne. The via middle provided the best trade off in terms of cost and interconnect density. The work was supported by Qualcomm, and then later Nvidia,Xilinx and Altera, who were looking for ways to beat Intel at its game - increasing memory on chip, but then by stacking, rather than scaling.
An integrated circuit, also known as a microchip or IC, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips that are present in everyday electronic devices. It is a multiple-step photolithographic and physio-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit chips were developed and then widely adopted, enabling complex semiconductor and telecommunication technologies. The microprocessor and memory chips are VLSI devices.
A hybrid integrated circuit (HIC), hybrid microcircuit, hybrid circuit or simply hybrid is a miniaturized electronic circuit constructed of individual devices, such as semiconductor devices and passive components, bonded to a substrate or printed circuit board (PCB). A PCB having components on a Printed Wiring Board (PWB) is not considered a true hybrid circuit according to the definition of MIL-PRF-38534.
While the term front end of line (FEOL) refers to the first portion of any IC fabrication where the individual devices are patterned in the semiconductor, back end of line (BEOL) comprises the subsequent deposition of metal interconnect layers. Thus, BEOL is the second portion of IC fabrication process where the individual devices get interconnected with wiring by deposited metalization layers.
A multi-chip module (MCM) is generically an electronic assembly where multiple integrated circuits, semiconductor dies and/or other discrete components are integrated, usually onto a unifying substrate, so that in use it can be treated as if it were a larger IC. Other terms for MCM packaging include "heterogeneous integration" or "hybrid integrated circuit". The advantage of using MCM packaging is it allows a manufacturer to use multiple components for modularity and/or to improve yields over a conventional monolithic IC approach.
A system in a package (SiP) or system-in-package is a number of integrated circuits (ICs) enclosed in one chip carrier package or encompassing an IC package substrate that may include passive components and perform the functions of an entire system. The ICs may be stacked using package on package, placed side by side, and/or embedded in the substrate. The SiP performs all or most of the functions of an electronic system, and is typically used when designing components for mobile phones, digital music players, etc. Dies containing integrated circuits may be stacked vertically on the package substrate. They are internally connected by fine wires that are bonded to the package substrate. Alternatively, with a flip chip technology, solder bumps are used to join stacked chips together and to the package substrate, or even both techniques can be used in a single package. SiPs are like systems on a chip (SoCs) but less tightly integrated and not on a single semiconductor die.
In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted. Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers, workstations, and servers. The first memory modules were proprietary designs that were specific to a model of computer from a specific manufacturer. Later, memory modules were standardized by organizations such as JEDEC and could be used in any system designed to use them.
A die, in the context of integrated circuits, is a small block of semiconducting material on which a given functional circuit is fabricated. Typically, integrated circuits are produced in large batches on a single wafer of electronic-grade silicon (EGS) or other semiconductor through processes such as photolithography. The wafer is cut (diced) into many pieces, each containing one copy of the circuit. Each of these pieces is called a die.
In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain.
Package on a package (PoP) is an integrated circuit packaging method to vertically combine discrete logic and memory ball grid array (BGA) packages. Two or more packages are installed atop each other, i.e. stacked, with a standard interface to route signals between them. This allows higher component density in devices, such as mobile phones, personal digital assistants (PDA), and digital cameras, at the cost of slightly higher height requirements. Stacks with more than 2 packages are uncommon, due to heat dissipation considerations.
An interposer is an electrical interface routing between one socket or connection to another. The purpose of an interposer is to spread a connection to a wider pitch or to reroute a connection to a different connection.
A three-dimensional integrated circuit is a MOS integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Integrated passive devices (IPDs), also known as integrated passive components (IPCs) or embedded passive components (EPC), are electronic components where resistors (R), capacitors (C), inductors (L)/coils/chokes, microstriplines, impedance matching elements, baluns or any combinations of them are integrated in the same package or on the same substrate. Sometimes integrated passives can also be called as embedded passives, and still the difference between integrated and embedded passives is technically unclear. In both cases passives are realized in between dielectric layers or on the same substrate.
Wafer-level packaging (WLP) is a process where packaging components are attached to an integrated circuit (IC) before the wafer – on which the IC is fabricated – is diced. In WSP, the top and bottom layers of the packaging and the solder bumps are attached to the integrated circuits while they are still in the wafer. This process differs from a conventional process, in which the wafer is sliced into individual circuits (dice) before the packaging components are attached.
The first planar monolithic integrated circuit (IC) chip was demonstrated in 1960. The idea of integrating electronic circuits into a single device was born when the German physicist and engineer Werner Jacobi developed and patented the first known integrated transistor amplifier in 1949 and the British radio engineer Geoffrey Dummer proposed to integrate a variety of standard electronic components in a monolithic semiconductor crystal in 1952. A year later, Harwick Johnson filed a patent for a prototype IC. Between 1953 and 1957, Sidney Darlington and Yasuo Tarui proposed similar chip designs where several transistors could share a common active area, but there was no electrical isolation to separate them from each other.
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015.
In integrated circuits (ICs), interconnects are structures that connect two or more circuit elements together electrically. The design and layout of interconnects on an IC is vital to its proper function, performance, power efficiency, reliability, and fabrication yield. The material interconnects are made from depends on many factors. Chemical and mechanical compatibility with the semiconductor substrate and the dielectric between the levels of interconnect is necessary, otherwise barrier layers are needed. Suitability for fabrication is also required; some chemistries and processes prevent the integration of materials and unit processes into a larger technology (recipe) for IC fabrication. In fabrication, interconnects are formed during the back-end-of-line after the fabrication of the transistors on the substrate.
A 2.5D integrated circuit is an advanced packaging technique that combines multiple integrated circuit dies in a single package without stacking them into a three-dimensional integrated circuit (3D-IC) with through-silicon vias (TSVs). The term "2.5D" originated when 3D-ICs with TSVs were quite new and still very difficult. Chip designers realized that many of the advantages of 3D integration could be approximated by placing bare dies side by side on an interposer instead of stacking them vertically. If the pitch is very fine and the interconnect very short, the assembly can be packaged as a single component with better size, weight, and power characteristics than a comparable 2D circuit board assembly. This half-way 3D integration was facetiously named "2.5D" and the name stuck. Since then, 2.5D has proven to be far more than just "half-way to 3D." Some benefits:
Glossary of microelectronics manufacturing terms
TSV is the heart of 3-D IC/Si integration and is a more-than-26-year-old technology. Even the TSV (for electrical feed-through) was invented by William Shockley in 1962 (the patent was filed on October 23, 1958), but it was not originally designed for 3-D integration.