 MESSENGER NAC mosaic | |
| Planet | Mercury |
|---|---|
| Coordinates | 4°43′S180°13′W / 4.72°S 180.22°W |
| Quadrangle | Tolstoj |
| Diameter | 79 km (49 mi) |
| Eponym | Afanasy Fet |
Fet is a crater on Mercury that is named for the Russian poet Afanasy Fet, who lived from 1820 to 1892. Its name was adopted by the International Astronomical Union in 1985. [1] The diameter of the crater is 79 kilometers. [2]
Fet lies within Tir Planitia.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
Fet was a municipality in Akershus county, Norway. It was part of the Romerike traditional region. The administrative centre of the municipality is the village of Fetsund.
A sensor is a device that produces an output signal for the purpose of sensing a physical phenomenon.
Afanasy Afanasyevich Fet, later known as Shenshin, was a renowned Russian poet regarded as the finest master of lyric verse in Russian literature.
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.
Lunar craters are impact craters on Earth's Moon. The Moon's surface has many craters, all of which were formed by impacts. The International Astronomical Union currently recognizes 9,137 craters, of which 1,675 have been dated.
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. When the target analyte concentration changes, the current through the transistor will change accordingly. Here, the analyte solution separates the source and gate electrodes. A concentration gradient between the solution and the gate electrode arises due to a semi-permeable membrane on the FET surface containing receptor moieties that preferentially bind the target analyte. This concentration gradient of charged analyte ions creates a chemical potential between the source and gate, which is in turn measured by the FET.
The 14 nm process refers to the MOSFET technology node that is the successor to the 22 nm node. The 14 nm was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following 22 nm was expected to be 16 nm. All 14 nm nodes use FinFET technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology.
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.
Fet, Fett or FET may refer to:
The Falange Española Tradicionalista y de las Juntas de Ofensiva Nacional Sindicalista, frequently shortened to just "FET", was the sole legal party of the Francoist regime in Spain. It was created by General Francisco Franco in 1937 as a merger of the fascist Falange Española de las JONS with the monarchist neo-absolutist and integralist Catholic Traditionalist Communion belonging to the Carlist movement. In addition to the resemblance of names, the party formally retained most of the platform of FE de las JONS and a similar inner structure. In force until April 1977, it was rebranded as the Movimiento Nacional in 1958.
Tir Planitia is a large plain on the planet Mercury. The name Tir (تیر) is the Persian word for "Mercury",, and the name was approved in 1976. It was first observed in detail by Mariner 10. It lies between the large crater Mozart and the ancient Tolstoj basin.
FetLife is a social networking website that serves people interested in BDSM, fetishism, and kink. On its homepage, FetLife describes itself as "Like Facebook, but run by kinksters like you and me." The "Fet" in the name refers to "fetish". FetLife distinguishes itself from competitors by emphasizing itself as a social network rather than a dating site. It is on principle supportive of fringe sexual practices.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor, field-effect biosensor (FEB), or biosensor MOSFET, is a field-effect transistor that is gated by changes in the surface potential induced by the binding of molecules. When charged molecules, such as biomolecules, bind to the FET gate, which is usually a dielectric material, they can change the charge distribution of the underlying semiconductor material resulting in a change in conductance of the FET channel. A Bio-FET consists of two main compartments: one is the biological recognition element and the other is the field-effect transistor. The BioFET structure is largely based on the ion-sensitive field-effect transistor (ISFET), a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the metal gate is replaced by an ion-sensitive membrane, electrolyte solution, and reference electrode.
This is a list of space objects and features which were named after Russian people:
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