International Conference on Defects in Semiconductors

Last updated

International Conference on Defects in Semiconductors
AbbreviationICDS
Discipline Materials Science Solid State Physics
Publication details
History1959–
FrequencyBiennial

International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. [1] The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings. [2]

Contents

The most recent ICDS (the 32nd) was at Rehoboth Beach, Delaware, September 10-15th, 2023. [3] ICDS 32 included the inaugural award of the Haller Prize, [4] named after Eugene E. Haller who was a major figure in the semiconductor community and an inspiring mentor for students. [5]

The next ICDS (33) will be at the Fudan University, September 15-19th, 2025, and will include a tutorial day on the 14th.

Corbett Prize

The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers. [6] The prize has been awarded at every ICDS since 1995.

Recipients

YearLocationAwardee(s)Notes
2023 [7] Rehoboth Beach, Delaware, United States Brendan McCullian University of Cornell
Fangzhou Zhao UCSB, Santa Barbara
2021 Oslo, Norway Robert KarsthofPost-Doc at Centre for Materials Science and Nanotechnology Physics, University of Oslo (PhD in 2018)
2019 [8] Seattle, United States Kunal Mukherjee UCSB, Santa Barbara
Christian Zimmermann University of Oslo, Norway
2017 Matsue, Japan Liwen Sang, [9] Independent scientist at National Institute for Materials Science, Japan (PhD in 2010)
Elena Pascal Post-doctoral researcher, Material Science and Engineering, Carnegie Mellon, USA
2015 Espoo, Finland Thomas Auzelle,Scientist at Paul Drude Institute in Berlin, Germany (PhD in 2015)
Jan E. StehrAssistant Prof at Linköping University (PhD in 2011)
2013 Bologna, Italy Daniel José da SilvaPost-Doc at KU Leuven (PhD in 2014)
2011 Nelson, New Zealand Ben GreenResearch scientist at Element Six, UK (PhD in 2013)
2009 St Petersburg, Russia Yoshihiro GohdaProfessor at Tokyo Institute of Technology, Japan (PhD in 2003)
Pavel PetrovSenior Scientist at Ioffe Institute, Russia (PhD in 2001)
2007 Albuquerque, United States Fadwa El-MellouhiSenior Scientist at Qatar Energy and Environment Research Institute, Qatar (PhD in 2006)
2005 Awaji Island, Japan Hannes RaebigerProfessor at Yokohama National University, Japan (PhD in 2006)
Savas BerberProfessor at Gebze Technical University, Turkey (PhD in 2004)
Sukit LimpijumnongProfessor at Suranaree University of Technology, Thailand (PhD in 2000)
2003 Aarhus, Denmark Naoki FukataGroup leader at National Institute for Materials Science, Japan (PhD in 1998)
2001 Giessen, Germany Yong-Sung KimPrincipal Researcher at Korea Research Institute of Standards and Science, South Korea (PhD in 2002)
Benjamin HourahineSenior Lecturer at University of Strathclyde (PhD in 2000)
1999 California, United States Ant UralProfessor at University of Florida (PhD in 2001)
1997 Aveiro, Portugal Joanne E. Gower King's College London
Tomas Hallberg Linköping University, Deputy Research Director at Swedish Defence Research Agency (PhD in 1995)
Tomi Mattila Helsinki University of Technology, Senior Scientist at VTT Technical Research Centre of Finland (PhD in 1997)
1995 Sendai, Japan Yasunori MochizukiVice President for Central Research Laboratories, NEC (PhD in 1987)
Kohei M. ItohProfessor at Keio University, Japan (PhD in 1994)

Haller Prize

Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students. [10] The Haller Prize is given to the best graduate student(s) presentation at each ICDS since 2023.

Recipients

YearLocationAwardee(s)Notes
2023 [11] Rehoboth Beach, United States Sarah Thompson University of Pennsylvania
Igor Prozheev University of Helsinki

Conference locations

The ICDS venue often rotates between locations in Europe, North America and the far East.

Conference nameLocationDatesProceedings
ICDS 34 Flag of the United Kingdom.svg Glasgow, Scotland 26–30 July 2027
ICDS 33 Flag of the People's Republic of China.svg Fudan University, Shanghai China 15–19 September 2025J. of Semiconductors
ICDS 32 Flag of the United States.svg Delaware, United States 10–15 September 2023J. Appl. Phys. [12]
ICDS 31 Flag of Norway.svg Oslo, Norway 25–30 July 2021J. Appl. Phys. [13]
ICDS 30 Flag of the United States.svg Seattle, United States 21–26 July 2019J. Appl. Phys. [14]
ICDS 29 Flag of Japan.svg Matsue, Japan 31 July–4 August 2017J. Appl. Phys. [15]
ICDS 28 Flag of Finland.svg Espoo, Finland 27–31 July 2015J. Appl. Phys [16]
ICDS 27 [17] Flag of Italy.svg Bologna, Italy 21–26 July 2013AIP Conference Proceedings [18]
ICDS 26 Flag of New Zealand.svg Nelson, New Zealand 17–22 July 2011Physica B [19]
ICDS 25 Flag of Russia.svg St Petersburg, Russia 20–24 July 2009Physica B [20]
ICDS 24 [21] Flag of the United States.svg Albuquerque, United States 22–37 July 2007Physica B [22]
ICDS 23 Flag of Japan.svg Awaji Island, Japan 24–29 July 2005Physica B [23]
ICDS 22 Flag of Denmark.svg Århus, Denmark 28 July–1 August 2003Physica B [24]
ICDS 21 Flag of Germany.svg Giessen, Germany 16–20 July 2001Physica B [25]
ICDS 20 Flag of the United States.svg Berkeley, California, United States 26–30 July 1999Physica B [26]
ICDS 19 Flag of Portugal.svg Aveiro, Portugal 21–25 July 1997Trans Tech [27]
ICDS 18 Flag of Japan.svg Sendai, Japan 23–28 July 1995Trans Tech [28]
ICDS 17 Flag of Austria.svg Gmunden, Austria 18–23 July 1993Trans Tech [29]
ICDS 16 Flag of the United States.svg Bethlehem, Pennsylvania, United States 22–26 July 1991Trans Tech [30]
ICDS 15 Flag of Hungary.svg Budapest, Hungary 22–26 August 1988Trans Tech [31]
ICDS 14 Flag of France.svg Paris, France 18–22 August 1986Trans Tech [32]
ICDS 13 Flag of the United States.svg Coronado, California, United States 12–17 August 1984Metallurgical Society of AIME [33]
ICDS 12 Flag of the Netherlands.svg Amsterdam, Netherlands 12 August–3 September 1982Physica B+C [34]
ICDS 11 Flag of Japan.svg Oiso, Japan 8–11 September 1980Institute of Physics Publishing [35]
ICDS 1 Flag of the United States.svg Gatlinburg, Tennessee, United States May 1959J. Appl. Phys. [36]

See also

Related Research Articles

<span class="mw-page-title-main">PLATO (computational chemistry)</span>

PLATO is a suite of programs for electronic structure calculations. It receives its name from the choice of basis set used to expand the electronic wavefunctions.

A wetting layer is an monolayer of atoms that is epitaxially grown on a flat surface. The atoms forming the wetting layer can be semimetallic elements/compounds or metallic alloys. Wetting layers form when depositing a lattice-mismatched material on a crystalline substrate. This article refers to the wetting layer connected to the growth of self-assembled quantum dots. These quantum dots form on top of the wetting layer. The wetting layer can influence the states of the quantum dot for applications in quantum information processing and quantum computation.

<span class="mw-page-title-main">Peter Grünberg</span> German physicist

Peter Andreas Grünberg was a German physicist, and Nobel Prize in Physics laureate for his discovery with Albert Fert of giant magnetoresistance which brought about a breakthrough in gigabyte hard disk drives.

<span class="mw-page-title-main">Lead telluride</span> Chemical compound

Lead telluride is a compound of lead and tellurium (PbTe). It crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. It occurs naturally as the mineral altaite.

The Boltzmann Medal is a prize awarded to physicists that obtain new results concerning statistical mechanics; it is named after the celebrated physicist Ludwig Boltzmann. The Boltzmann Medal is awarded once every three years by the Commission on Statistical Physics of the International Union of Pure and Applied Physics, during the STATPHYS conference.

Rydberg matter is an exotic phase of matter formed by Rydberg atoms; it was predicted around 1980 by É. A. Manykin, M. I. Ozhovan and P. P. Poluéktov. It has been formed from various elements like caesium, potassium, hydrogen and nitrogen; studies have been conducted on theoretical possibilities like sodium, beryllium, magnesium and calcium. It has been suggested to be a material that diffuse interstellar bands may arise from. Circular Rydberg states, where the outermost electron is found in a planar circular orbit, are the most long-lived, with lifetimes of up to several hours, and are the most common.

The Australian Centre for Neutron Scattering (ACNS), formerly the Bragg Institute, is a landmark neutron and X-ray scattering facility in Australia. It is located at the Australian Nuclear Science and Technology Organisation's (ANSTO) Lucas Heights site, 40 km south-west of Sydney, in New South Wales, Australia.

<span class="mw-page-title-main">Grazing-incidence small-angle scattering</span>

Grazing-incidence small-angle scattering (GISAS) is a scattering technique used to study nanostructured surfaces and thin films. The scattered probe is either photons or neutrons. GISAS combines the accessible length scales of small-angle scattering and the surface sensitivity of grazing incidence diffraction (GID).

A domain wall is a term used in physics which can have similar meanings in magnetism, optics, or string theory. These phenomena can all be generically described as topological solitons which occur whenever a discrete symmetry is spontaneously broken.

<span class="mw-page-title-main">Edward Ott</span> American physicist

Edward Ott is an American physicist most noted for his contributions to the development of chaos theory.

Štefan Luby is a Slovak physicist and senior research fellow at the Slovak Academy of Sciences (SAS). He is doctor honoris causa of University of Salento, Italy, Slovak University of Technology in Bratislava, University of Constantine the Philosopher in Nitra, Slovakia, and Alexander Dubček University in Trenčín, Slovakia. He occupied positions of the director of the Institute of Physics of SAS for nine years and was the president of the SAS for fourteen years (1995–2009). He was the acting president of the All European Academies and the acting president of the Central European Academy of Sciences and Arts. At present, he is a member of Senate and vice-president of the European Academy of Sciences and Arts with the headquarters in Salzburg. He has chaired the editorial board of the Slovak Encyclopaedia Beliana since 1992.

The International Conference on Low Temperature Physics (LT) is an academic conference held every three years near the month of September attracting on average well over a thousand participants from all over the world. The LT conferences are endorsed by the International Union of Pure and Applied Physics (IUPAP) via its Commission on Low Temperature Physics (C5). The mandate of the LT conferences is to promote the exchange of information and views among the members of the international scientific community in the general field of Low Temperature Physics.

Akhoury Purnendu Bhusan Sinha was an Indian solid state chemist who was the head of the Physical Chemistry Division of the National Chemical Laboratory, Pune. He is known for his theories on semiconductors and his studies on synthesis of manganites. He was an elected fellow of the Indian National Science Academy and the Indian Academy of Sciences. The Council of Scientific and Industrial Research, the apex agency of the Government of India for scientific research, awarded Sinha the Shanti Swarup Bhatnagar Prize for Science and Technology, one of the highest Indian science awards, in 1972, for his contributions to chemical sciences.

.

MgCu<sub>2</sub> Chemical compound

MgCu2 is a binary intermetallic compound of magnesium (Mg) and copper (Cu) adopting cubic crystal structure, more specifically the C15 Laves phase. The space group of MgCu2 is Fd3m with lattice parameter a = 7.04 Å.

Geometric diodes, also known as morphological diodes, use the shape of their structure and ballistic / quasi-ballistic electron transport to create diode behavior. Geometric diodes differ from all other forms of diodes because they do not rely on a depletion region or a potential barrier to create their diode behavior. Instead of a potential barrier, an asymmetry in the geometry of the material creates an asymmetry in forward vs reverse bias current.

<span class="mw-page-title-main">Stefan Karol Estreicher</span>

Stefan Karol Estreicher is a theoretical physicist, currently serving as Paul Whitfield Horn Distinguished Professor Emeritus at the Physics Department of Texas Tech University in Lubbock, Texas.

Europium(III) nitride is a binary inorganic compound of europium and nitrogen with the chemical formula EuN.

Promethium nitride is a binary inorganic compound of promethium and nitrogen with the chemical formula PmN.

References

  1. ↑ Jantsch, Wolfgang (October 1993). "Preface". Materials Science Forum. 143–147: 100–105. Bibcode:1998MSF...278..100W. doi:10.4028/www.scientific.net/MSF.278-281.100. S2CID   137674410 . Retrieved 22 August 2018.
  2. ↑ Cardona, Manuel; Marx, Werner (15 December 2007). "Anatomy of the ICDS series: A bibliometric analysis". Physica B. 401 (1–2): 1–6. Bibcode:2007PhyB..401....1C. doi:10.1016/j.physb.2007.08.101.
  3. ↑ https://icds2023.org/
  4. ↑ "ICDS awards".
  5. ↑ "Eugene E. Haller obituary".
  6. ↑ Gibson, Walter; Ratcliff, Keith; Watkins, George (December 1994). "Obituary. James W. Corbett". Physics Today. 47 (12): 84. Bibcode:1994PhT....47l..83G. doi: 10.1063/1.2808764 .
  7. ↑ https://icds2023.org/
  8. ↑ "Archived copy". Archived from the original on 23 July 2019. Retrieved 26 July 2019.{{cite web}}: CS1 maint: archived copy as title (link)
  9. ↑ "Dr. Liwen Sang, MANA Independent Scientist Wins the Corbett Prize at ICDS 2017 Conference". International Center for Materials Nanoarchitectonics. Retrieved 22 August 2018.
  10. ↑ "Eugene E. Haller obituary".
  11. ↑ https://icds2023.org/
  12. ↑ "Defects in Semiconductors 2024".
  13. ↑ "Defects in Semiconductors 2022".
  14. ↑ "Defects in Semiconductors 2020".
  15. ↑ Yamamoto, Tetsuya; Fujiwara, Yasufumi; Itoh, Kohei (30 April 2018). "Preface to Special Topic: Defects in Semiconductors". Journal of Applied Physics. 123 (16): 161301. Bibcode:2018JAP...123p1301Y. doi: 10.1063/1.5036660 .
  16. ↑ Tuomisto, Filip; Makkonen, Ilja (5 May 2016). "Preface to Special Topic: Defects in Semiconductors". Journal of Applied Physics. 119 (18): 181301. Bibcode:2016JAP...119r1301T. doi: 10.1063/1.4948578 .
  17. ↑ "ICDS 27 - Bologna 21-26 July 2013". www.icds2013.eu. Archived from the original on 7 February 2014. Retrieved 13 January 2022.
  18. ↑ Cavallini, Anna; Estreicher, Stefan (17 February 2015). "Preface: 27th International Conference on Defects in Semiconductors (ICDS-2013)". AIP Conference Proceedings. 1583 (1): 1. Bibcode:2014AIPC.1583....1C. doi:10.1063/1.4865592.
  19. ↑ Evans-Freeman, Jan; Vernon-parry, Karen; Allen, Martin (2012). "Preface". Physica B: Condensed Matter. 407 (15). Elsevier BV: xi. doi:10.1016/s0921-4526(12)00538-8. ISSN   0921-4526.
  20. ↑ Bagraev, Nikolay T.; Emtsev, Vadim V.; Estreicher, Stefan K. (2009). "Preface". Physica B: Condensed Matter. 404 (23–24). Elsevier BV: xix. Bibcode:2009PhyB..404D..19B. doi:10.1016/j.physb.2009.08.098. ISSN   0921-4526.
  21. ↑ "ICDS-24 : International Conference on Defects in Semiconductors, 2007". Archived from the original on 7 December 2008. Retrieved 7 December 2008.
  22. ↑ Estreicher, Stefan K.; Holtz, Mark W.; Seager, Carleton H.; Wright, Alan F. (2007). "Preface and acknowledgements". Physica B: Condensed Matter. 401–402. Elsevier BV: xvii. Bibcode:2007PhyB..401D..17E. doi:10.1016/j.physb.2007.08.100. ISSN   0921-4526.
  23. ↑ Oshiyama, A.; Maeda, K.; Itoh, K.M.; Katayama-Yoshida, H. (1 April 2006). "Proceedings of the 23rd International Conference on Defects in Semiconductors". Physica B. 376–377. doi:10.1016/j.physb.2005.12.003.
  24. ↑ "Preface and acknowledgements". Physica B: Condensed Matter. 340–342. Elsevier BV: vii–viii. 2003. Bibcode:2003PhyB..340D...7.. doi:10.1016/j.physb.2003.10.009. ISSN   0921-4526.
  25. ↑ (ICDS-21) (16 July 2001). "Physica B: Condensed Matter | International Conference on Defects in Semiconductors (ICDS-21)". Science Direct . Elsevier . Retrieved 25 August 2022.{{cite web}}: CS1 maint: numeric names: authors list (link)
  26. ↑ Stavola, Michael (1999). "To 40 years of defects in semiconductors: may the problem never be solved!". Physica B: Condensed Matter. 273–274. Elsevier BV: 1–6. Bibcode:1999PhyB..273....1S. doi:10.1016/s0921-4526(99)00725-5. ISSN   0921-4526.
  27. ↑ Davies, Gordon; Nazaré, Maria Helena, eds. (1997). Defects in Semiconductors 19. Trans Tech. ISBN   9780878497867 . Retrieved 26 July 2021.
  28. ↑ Suezawa, M.; Katayama-Yoshida, H., eds. (1995). Defects in Semiconductors 18. Trans Tech. ISBN   9780878497164 . Retrieved 26 July 2021.
  29. ↑ Heinrich, Helmut; Jantsch, Wolfgang, eds. (1994). Defects in Semiconductors 17. Trans Tech. ISBN   9780878496716 . Retrieved 26 July 2021.
  30. ↑ Davies, Gordon; DeLeo, G. G.; Stavola, M., eds. (1992). Defects in Semiconductors 16. Trans Tech. ISBN   9780878496280 . Retrieved 26 July 2021.
  31. ↑ Ferenczi, G., ed. (1989). Defects in Semiconductors 15. Trans Tech. ISBN   9780878495849 . Retrieved 26 July 2021.
  32. ↑ von Bardeleben, H. J., ed. (1986). Defects in Semiconductors 14. Trans Tech. ISBN   9780878495511 . Retrieved 26 July 2021.
  33. ↑ Kimerling, L. C.; Parsey, J. M., eds. (1985). Thirteenth International Conference on Defects in Semiconductors. Metallurgical Society of AIME. ISBN   9780895204851.
  34. ↑ Kimerling, L. C. (1983). "Defects in semiconductors - 1982". Physica B+C. 116 (1): 1–3. Bibcode:1983PhyBC.116....1K. doi:10.1016/0378-4363(83)90218-8.
  35. ↑ Hasiguti, Ryukiti (1981). Defects and radiation effects in semiconductors, 1980 : invited and contributed papers from the eleventh International Conference on Defects and Radiation Effects in Semiconductors held in Oiso, Japan, 8-11 September 1980. Bristol: Institute of Physics. ISBN   978-0-85498-150-2. OCLC   8123314.
  36. ↑ "Forward". Journal of Applied Physics. 30 (8): 1117. 1959. Bibcode:1959JAP....30.1117.. doi:10.1063/1.1735279.
  37. ↑ "Defects in Semiconductors - Gordon Research Conferences".
  38. ↑ "EDS2018".
This page is based on this Wikipedia article
Text is available under the CC BY-SA 4.0 license; additional terms may apply.
Images, videos and audio are available under their respective licenses.