Pro Electron or EECA is the European type designation and registration system for active components (such as semiconductors, liquid crystal displays, sensor devices, electronic tubes and cathode ray tubes).
Pro Electron was set up in 1966 in Brussels, Belgium. In 1983 it was merged with the European Electronic Component Manufacturers Association (EECA) and since then operates as an agency of the EECA.
The goal of Pro Electron is to allow unambiguous identification of electronic parts, even when made by several different manufacturers. To this end, manufacturers register new devices with the agency and receive new type designators for them.
Examples of Pro Electron type designators are:
Pro Electron took the popular European coding system in use from around 1934 for valves (tubes), i.e. the Mullard–Philips tube designation, and essentially re-allocated several of the rarely used heater designations (first letter of the part number) for semiconductors. The second letter was used in a similar way to the valves naming convention: "A" for signal diode, "C" for low-power bipolar transistor or triode, "D" for high-power transistor (or triode), and "Y" for rectifier, but other letter designations did not follow the vacuum tube mode so closely.
The three digits (or letter followed by two digits) after the first two letters were essentially a sequence number, with (at first) a vestige of the valve-era convention that the first one or two digits would indicate the base (package) type in examples such as in this family of general-purpose transistors:
| Package | NPN | PNP |
|---|---|---|
| TO-18 | BC10x | BC17x |
| Lockfit | BC14x | BC15x |
| TO-92 | BC54x | BC55x |
... where x may be:
Pro Electron naming for transistors and Zener diodes has been widely taken up by semiconductor manufactures around the world. Pro Electron naming of integrated circuits, other than some special (e.g. television signal-processing) chips, did not greatly take hold (even in Europe). Other popular designation systems were used for many integrated circuits.
ECC81 / \ \\__ last digit(s) give serial number / \ \__ first digit(s) indicate base (3=octal, 8 or 18 or 80=Noval (B9A), 9=Miniature 7-pin (B7G). / \___ one letter per valve unit in the tube: D=1.4v or less A=single-diode (low power) E=6.3v* B=double-diode (usually shared cathode, but not always) P=300mA C=triode U=100mA F=pentode (low power) L=pentode (high power) Y=Single-phase rectifier Z=Full-wave rectifier * Note: some 6.3 volt heater types have a split heater allowing series (12.6 volt; the default for Noval pins 4 to 5) or parallel (6.3 volt) operation.
(see above)
| 2nd letter | Usage | Example |
|---|---|---|
| A | Low-power/small-signal diode | AA119, BA121 |
| B | Varicap diode | BB105G |
| C | Small signal transistor, RthG > 15K/W | BC546C |
| D | High-power, low-frequency power transistor, RthG ≤ 15K/W | BD139 |
| E | Tunnel (Esaki-)diode | AE100 |
| F | Low-power, RF (high-frequency) bipolar or FET, RthG > 15K/W | BF245 |
| G | Hybrid device | BGY32, BGY585 |
| H | Hall effect sensor/diode | |
| L | High-frequency, high-power transistor (for transmitters), RthG ≤ 15K/W | BLW34 |
| M | Ring modulator-type frequency mixer | |
| N | Opto-isolator | CNY17 |
| P | Radiation detector (photodiode, phototransistor) | BPW34 |
| Q | Radiation generator (LED) | CQY99 |
| R | Low-power control or switching device: thyristors, diacs, triacs, UJTs, programmable unijunction transistors (PUT), silicon bidirectional switch (SBS), opto-triacs etc. | BR100 |
| S | Low-power switching transistor, bipolar or MOSFET, RthG > 15K/W | BS170 |
| T | High-power control or switching device: thyristors, TRIACs, silicon bidirectional switch (SBS), etc. | BT138 |
| U | High-power switching transistors, bipolar or MOSFET, RthG ≤ 15K/W | BU508, BUZ11 |
| V | Antenna | |
| W | Surface-acoustic-wave device | |
| X | Frequency multiplier: varactor, step recovery diode | |
| Y | High-power rectifying diode | BY228 |
| Z | Avalanche, TVS, Zener diode | BZY91 |
Following these two letters is a 3- or 4-digit serial number (or another letter then digits), assigned by Pro Electron. It is not always merely a sequence number; there is sometimes information conveyed in the number:
Suffixes may be used, letters or perhaps blocks of digits delimited by "/" or "-" from the serial number, often without fixed meanings but some of the more common conventions are:
Examples of suffixes and manufacturers' extensions to the basic sequence number include:
| Prefix class | Usage | Example | Notes |
|---|---|---|---|
| AC | Germanium small signal transistor | AC127/01 | an AC127 (TO-1 case) with built-on heat-conducting block |
| AF | Germanium RF transistor | AFY40R | the "Y40" sequence number implies industrial uses, the "R" indicates reduced specifications |
| BC | Silicon, small-signal transistor ("allround" or "G.P.") | BC183LB | the "L" indicates Base-Collector-Emitter pinout while the "B" suffix indicates medium gain (240-500 hFE) selection |
| BC | Silicon, small-signal transistor | BC337-25 | -25 indicates an hFE of around 250 (140-400 range) |
| BD | Silicon Darlington-pair power transistor | BDT60B | the "B" suffix here indicates medium voltage (-100VCBO) |
| BF | Silicon RF (high-frequency) BJT or FET | BF493S | a BF493 with a -350VCEO rating |
| BL | Silicon high-frequency, high-power (for transmitters) | BLY49A | BLY49 in a TO-66 case |
| BS | Silicon switching transistor, bipolar or MOSFET | BSV52LT1 | SOT-23 (surface-mount) package |
| BT | Silicon Thyristor or TRIAC | BT138/800 | 800V-rated TRIAC |
| BU | Silicon high-voltage (for CRT horizontal deflection circuits) | BU508D | a BU508 with integral damper diode |
| BZ | Silicon regulator ("Zener") diode | BZY88-C5V6 | "C" indicates 5% tolerance, "5V6" indicates 5.6Vz |
Note: A BC546 might only be marked "C546" by some manufacturers, thus possibly creating confusion with JIS abbreviated markings, because a transistor marked "C546" might also be a 2SC546.
Short summary of the most common semiconductor diode and transistor designations:
BC549C / |--- \___ variant (A,B,C for transistors implies low, medium or high gain) / | \____ serial number (at least 3 digits or letter and 2 digits) / device type: A=Ge A=Signal diode B=Si C=LF low-power transistor D=LF Power transistor F=RF transistor (or FET) P=Photosensitive transistor etc. T=Triac or thyristor Y=Rectifier diode Z=Zener diode
Poland, Hungary, Romania, and Cuba mostly used Pro Electron designations for discrete semiconductors just like Western Europe. Starting in 1971, in Poland the letter "P" was inserted, e.g. BUY54 became BUYP54. [4] Kombinat Mikroelektronik Erfurt (KME) in East Germany and Tesla (Czechoslovak company) used designations derived from the Pro Electron scheme. In particular, the first letter specifying the material differed while the second letter followed the table above (with the few exceptions for KME noted below). [5]
| Material | 1st letter Pro Electron | 1st letter KME East Germany | 1st letter Tesla |
|---|---|---|---|
| Germanium | A | G | G |
| Silicon | B | S | K |
| Compound materials (GaAs etc.) | C | V | L |
| Multiple materials (e.g. Si + GaAs) | C | M | — |
| 2nd letter | KME East Germany usage |
|---|---|
| B | Optoisolator (varicaps were included with other diodes under letter A) |
| M | MOSFET (Pro Electron includes MOSFETs in letters C, D, F, L, S, U) |
| W | Sensors other than radiation detectors |
Examples: GD241C - Germanium power transistor from KME; MB111 - optoisolator from KME; KD503 - Silicon power transistor from Tesla; LQ100 - LED from Tesla.
The integrated circuit designation consists of three letters, followed by a serial number of three to five digits. [1] Initially, only three-digit serial numbers were allowed. For designations with a three-digit serial number the third initial letter had a defined meaning for digital integrated circuits (see below) and the operating temperature range was encoded in the last digit of the serial number. [6] The specification was changed in 1973 [6] to allow longer serial numbers. For designations with a serial number of more than three digits the third initial letter encodes the temperature range. [1] [6] Optionally, a version letter (A, B, ...) and / or a package designation can follow after the serial number. [1]
| 1st letter | Usage | Example |
|---|---|---|
| F, G, H, I | Digital integrated circuit that is part of a family | FLH101 |
| M | Microprocessor | MAB2650A |
| N | Charge-transfer devices and switched capacitors | |
| P | Digital integrated circuit that is part of a family | PMB2205 |
| S | Digital integrated circuit that is not part of a family ("solitary") | SAA1099 |
| T | Analogue integrated circuit | TEA1002 |
| U | Mixed-signal integrated circuit (analogue and digital) | UAA180 |
| Range | 3-digit serial number) | serial number with more than 3 digits | ||
|---|---|---|---|---|
| 3rd digit | Example | 3rd letter | Example | |
| No temperature range specified | 0 | TCA220 | A | TDA5140A |
| 0 °C to +70 °C | 1 | FLH241 | B | PSB2115F |
| −55 °C to +125 °C | 2 | TAA762 [6] | C | HCC4012B [7] |
| −10 °C to +85 °C | 3 | — | — | |
| +15 °C to +55 °C | 4 | — | — | |
| −25 °C to +70 °C | 5 | FLH185 | D | SAD1009P |
| −25 °C to +85 °C | — | — | E | TBE2335 [6] |
| −40 °C to +85 °C | 6 | FJH106 [8] | F | HEF4011BP |
| Package | Description | Example |
|---|---|---|
| E | Ball grid array (BGA) | PMB2800E |
| H | Quad Flat Package (QFP) | SAA7146AH |
| N | Quad Flat Package (QFP) non leaded | PEB2086N |
| P | Plastic dual in-line package (DIP) | PCF8574P |
| T | Small Outline Package (SOP) | PCF8574AT |
The combination of first letter and second letter is assigned to a specific manufacturer. [1]
FCH171 // \ \__ serial number (including temperature range) // \___ H=gate ("Combinatorial circuit"), J=flip-flop, K=monostable, L=level shifter, Q=RAM, R=ROM, Y=miscellaneous etc. FC=DTL by Philips [9] / Mullard [8] FD=dynamic PMOS by Philips [9] / Mullard [8] FE=PMOS by Philips [9] / Mullard [8] FH=TTL by Philips [9] (SUHL II series) FJ=TTL by Philips [9] / Mullard [8] (7400 series) FK=E2CL by Philips [9] FL=TTL by Siemens (7400 series) [10] FN=ECL by Telefunken [11] FP=HTL by Telefunken [11] [12] FQ=DTL by SGS-ATES [13] [14] FS=SECL by Telefunken [11] FY=ECL by Siemens [10] FZ=HTL by Siemens [10] GD=PMOS by Siemens (MEM1000 series) [15] GH=ECL by Philips [16] GJ=TTL by Mullard (74H00 series) [8] GR=interface devices by Mullard (7500 series) [8] GT=TTL by Mullard (74S00 series) [8] Unfortunately the serial number does not specify the same type of gate in each family, e.g. while an FJH131 is a quadruple 2-input NAND gate (like the 7400), an FCH131 is a dual 4-input NAND gate, [8] and an FLH131 is an 8-input NAND gate (equivalent to 7430). [10] To lessen the confusion at least for the 7400 series, at some point manufacturers included the well-known 7400 series designation both in their literature and on the integrated circuits themselves.
A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits.
A vacuum tube, electron tube, valve, or tube, is a device that controls electric current flow in a high vacuum between electrodes to which an electric potential difference has been applied.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body headquartered in Arlington County, Virginia, United States.
The Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
The 7400 series of integrated circuits (ICs) are a popular logic family of transistor–transistor logic (TTL) logic chips.
Mullard Limited was a British manufacturer of electronic components. The Mullard Radio Valve Co. Ltd. of Southfields, London, was founded in 1920 by Captain Stanley R. Mullard, who had previously designed thermionic valves for the Admiralty before becoming managing director of the Z Electric Lamp Co. The company soon moved to Hammersmith, London and then in 1923 to Balham, London. The head office in later years was Mullard House at 1–19 Torrington Place, Bloomsbury, now part of University College London.
An electronic component is any basic discrete device or physical entity in an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements.
The TO-92 is a widely used style of semiconductor package mainly used for transistors. The case is often made of epoxy or plastic, and offers compact size at a very low cost.
The Radio Electronics Television Manufacturers' Association was formed in 1953, as a result of mergers with other trade standards organisations, such as the RMA. It was principally responsible for the standardised nomenclature for American vacuum tubes - however the standard itself had already been in use for a long time before 1953; for example, the 6L6 was introduced in July 1936.
In Europe, the principal method of numbering vacuum tubes was the nomenclature used by the Philips company and its subsidiaries Mullard in the UK, Valvo(de, it) in Germany, Radiotechnique (Miniwatt-Dario brand) in France, and Amperex in the United States, from 1934 on. Adhering manufacturers include AEG (de), CdL (1921, French Mazda brand), CIFTE (fr, Mazda-Belvu brand), EdiSwan (British Mazda brand), Lorenz (de), MBLE(fr, nl), RCA (us), RFT(de, sv) (de), Siemens (de), Telefunken (de), Tesla (cz), Toshiba (ja), Tungsram (hu), and Unitra. This system allocated meaningful codes to tubes based on their function and became the starting point for the Pro Electron naming scheme for active devices.
In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. TO stands for "Transistor Outline" and relates to a series of technical drawings produced by JEDEC.
In the years 1942-1944, the Radio Manufacturers Association used a descriptive nomenclature system for industrial, transmitting, and special-purpose vacuum tubes. The numbering scheme was distinct from both the numbering schemes used for standard receiving tubes, and the existing transmitting tube numbering systems used previously, such as the "800 series" numbers originated by RCA and adopted by many others.
In electronics, TO-18 is a designation for a style of transistor metal case. The case is more expensive than the similarly sized plastic TO-92 package. The name is from JEDEC, signifying Transistor Outline Package, Case Style 18.
Japanese Industrial Standards (JIS) has standard JIS-C-7012 for semiconductor part numbers. The first digit denotes the p-n junction count ; then follows the letter "S", then:
The following outline is provided as an overview of and topical guide to electronics:
VEB Kombinat Mikroelektronik Erfurt was an important manufacturer of active electronic components in East Germany. It should not be confused with the more well-known VEB Kombinat Robotron Dresden which used integrated circuits from Kombinat Mikroelektronik in its computers.
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