The soviet integrated circuit designation is an industrial specification for encoding the names of integrated circuits manufactured in the Soviet Union and the Post-Soviet states. 25 years after the dissolution of the Soviet Union, a number of manufacturers in Russia, Belarus, Ukraine, Latvia, and Uzbekistan still use this designation.
The designation uses the Cyrillic alphabet which sometimes leads to confusion where a Cyrillic letter has the same appearance as a Latin letter but is romanized as a different letter. Furthermore, for some Cyrillic letters the Romanization is ambiguous.
The nomenclature for integrated circuits has changed somewhat over the years as new standards were published:
Throughout this article the standards are referred to by the year they came into force. Before 1968 each manufacturer used its own integrated circuit designation. [1] [15] Following the dissolution of the Soviet Union in 1991, the standards were not as strictly enforced, and a number of manufacturers introduced manufacturer-specific designations again. These were typically used in parallel with the standards. However, integrated circuits for military, aerospace, and nuclear applications in Russia still have to follow the standard designation. Underlining this, the 2010 standard is explicitly labelled a Russian military standard. Beside Russia the 2010 standard is applied in Belarus as well. Companies in Ukraine mostly stayed with the 1980 standard and prefixed the designation with the letter У (U), e.g. УМ5701ВЕ51. [16] The 1980 standard was published in Ukraine as DSTU 3212—95 (Ukrainian : ДСТУ 3212-95). Bulgarian designations for bipolar integrated circuits, e.g. 1УО709С, [17] look confusingly similar to the 1968 Soviet designations but the standards differ. The functional group is also indicated by two letters in the Cyrillic alphabet and many groups were obviously copied from the Soviet standard (АГ, ИД, ИЕ, ЛБ, ЛН, ЛП, МП, ПК, СА, УС). Some subgroups differ (ТД, УМ, УО) and some groups are completely different (НС, ОИ, РН). For the number after the functional group there is no concept of a series. Instead, that number usually matches the Western counterpart (e.g. the 1УО709С is equivalent to a μA709).
Also as a consequence of the dissolution of the Soviet Union, COCOM restrictions were lifted and Russian integrated circuit design firms gained access to foundries abroad. In that sense it could be argued that the importance of the Soviet designation has spread across the globe. When foundries are not able to label the circuit in the Cyrillic alphabet then the Latin alphabet is used (e.g. KF1174PP1 [18] ). The sanctions in response to the Russian invasion of Ukraine ended this international co-operation in 2022.
In general, devices already in production when a new standard came out kept their old designation. However, in some case devices were renamed:
Elements:
Group | Description | Example [6] [24] [25] | |||||
---|---|---|---|---|---|---|---|
Russian | English | 1968 | 1973 | 1980 | 2000 | Original | Equivalent |
А | A | Pulse shapers and drivers | |||||
АА | AA | — | Address line drivers (esp. for magnetic-core memory) | К170АА7 | SN75327 | ||
АГ | AG | — | Square wave pulse shapers (including monostable multivibrators) | К555АГ4 | 74LS221 | ||
АИ | AI | — | — | — | Time interval shaper (timer) | 1512АИ1У | |
АН | AN | — | — | — | Voltage pulse shaper | ||
АП | AP | — | Other pulse shapers (e.g. digital buffers including tri-state buffers, bubble memory drivers, CCD drivers) | ЭКР1533АП5 | 74ALS244 | ||
АР | AR | — | Bit-line drivers (esp. for magnetic-core memory) | 146АР1 | |||
АТ | AT | — | — | — | Current pulse shaper | ||
АФ | AF | — | Pulse shapers for special waveforms | К174АФ5 | |||
Б | B | Delay devices [lower-alpha 1] | Array of cells | ||||
БА | BA | — | — | — | Array of analogue cells [lower-alpha 2] | Н1451БА1У-А502 | |
БК | BK | — | — | — | Array of mixed-signal cells [lower-alpha 3] | 1451БК2У | |
БМ | BM | — | Passive delay device | — | |||
БП | BP | — | Other delay device | Other array of cells (e.g. gate array plus processor) | К5512БП1Ф | ||
БР | BR | — | Active delay device (e.g. bucket-brigade device) | — | КА528БР2 | ||
БЦ | BTs, BC | — | — | — | Array of digital cells (gate array) [lower-alpha 4] | 5585БЦ1У | |
В | V | Computing devices [lower-alpha 5] | |||||
ВА | VA | — | — | Bus interface | КР580ВА86 | Intel 8286 | |
ВБ | VB | — | — | Synchronization device (e.g. arbiter) | КР1810ВБ89 | Intel 8289 | |
ВВ | VV | — | — | Input / output interface (e.g. serial or parallel interface) | КР580ВВ55А | Intel 8255 | |
ВГ | VG | — | — | Controller (e.g. memory controller, video display controller) | КР1810ВГ88 | Intel 8288 | |
ВД | VD | — | — | — | Controller with digital inputs and outputs | 1875ВД1Т | Intel 80C186 |
ВЕ | VE | — | — | Single-chip microcontroller | КМ1816ВЕ48 | Intel 8748 | |
ВЖ | VZh | — | — | Specialized device (e.g. error correction circuit) | К1800ВЖ5 | Motorola MC10905 | |
ВИ | VI | — | — | Timer device, real-time clock | КР580ВИ53 | Intel 8253 | |
ВК | VK | — | — | Combined device (e.g. bus controller, GPIB controller) | КР580ВК28 | Intel 8228 | |
ВМ | VM | — | — | Microprocessor [lower-alpha 6] | КР580ВМ80A | Intel 8080 | |
ВН | VN | — | — | Programmable interrupt controller | КР580ВН59 | Intel 8259 | |
ВП | VP | — | — | Other computing devices (e.g. gate array) | К1801ВП1 | ||
ВР | VR | — | — | Extender for e.g. word size, number of ports, number of interrupt lines, available arithmetic operations (esp. a multiplier) | КМ1804ВР1 | AMD Am2902 | |
ВС | VS | — | — | Microprocessor section, esp. bit-slice | КР1804ВС1 | AMD Am2901 | |
ВТ | VT | — | — | Memory controller | КР1810ВТ37 | Intel 8237 | |
ВУ | VU | — | — | Microcode control device | М1804ВУ4 | AMD Am2909 | |
ВФ | VF | — | — | Data transformation functions (calculation of e.g. CRC, Fourier transform) | 1815ВФ3 | ||
ВХ | VKh, VX, VH | — | — | Devices for calculators | К145ВХ1 | ||
ВЦ | VTs, VC | — | — | — | Digital signal processor [lower-alpha 6] | 1867ВЦ10Т | TMS320F240x |
ВЮ | VYu | — | — | — | Controller with analogue inputs and outputs | К1055ВЮ1Т | |
ВЯ | VYa | — | — | — | Digital signal processor with analogue inputs and outputs | 1879ВЯ1Я | |
Г | G | Signal generators and oscillators | |||||
ГГ | GG | — | Square wave generators (including astable multivibrators and blocking oscillators) | КР531ГГ1 | 74S124 | ||
ГЛ | GL | — | Sawtooth wave generators (e.g. for CRT deflection circuits) | К174ГЛ1 | TDA1170 | ||
ГМ | GM | — | Noise generators | К1316ГМ1У | |||
ГН | GN | — | — | — | Programmable signal generators | 1316ГН2Н4 | |
ГП | GP | — | Other signal generators | КМ1012ГП1 | MM5555 | ||
ГС | GS | Sine wave generators (including harmonic oscillators) | К277ГС1 | ||||
ГФ | GF | Signal generators for special waveforms (including generators for multiple waveforms) | К174ГФ2 | XR2206 | |||
Д | D | Detectors and demodulators | |||||
ДА | DA | Amplitude modulation detectors | 235ДА1 | ||||
ДИ | DI | Pulse modulation detectors | |||||
ДК | DK | — | — | — | Frequency-phase modulation detectors | ||
ДН | DN | — | — | — | Voltage detector (monitor) | К1230ДН1БР | MC34161 |
ДП | DP | Other detectors | К1230ДП46П | MC34064 | |||
ДС | DS | Frequency modulation detectors | К2ДС241 | ||||
ДФ | DF | Phase modulation detectors | К1102ДФ1 | MC4044 | |||
Е | E | Power supply devices | |||||
ЕА | EA | — | — | — | Positive fixed-voltage linear regulator | ||
ЕВ | EV | — | Rectifiers | К299ЕВ1 | |||
ЕГ | EG | — | — | — | Negative adjustable-voltage linear regulator | 1349ЕГ1У | LM137 |
ЕД | ED | — | — | — | Dual-polarity symmetric fixed-voltage linear regulator | ||
ЕЕ | EE | — | — | — | Voltage supervisor, reset circuit | 1363ЕЕ1Т | MAX709L |
ЕИ | EI | — | — | — | Negative fixed-voltage linear regulator | 1343ЕИ5У | 7905 |
ЕК | EK | — | — | Switched-mode power supply devices | К1156ЕК1АП | LM2596 | |
ЕЛ | EL | — | — | — | Dual-polarity asymmetric fixed-voltage linear regulator | ||
ЕМ | EM | — | Electric power conversion devices (e.g. thyristor controller) | КР1182ЕМ2 | |||
ЕН | EN | Linear voltage regulators | КР142ЕН8А | 7808 | |||
ЕП | EP | Other power supply devices (e.g. charge pump devices) | КР1168ЕП1 | ICL7660 | |||
ЕР | ER | — | — | — | Positive adjustable-voltage linear regulator | 1325ЕР1У | AMS1117 |
ЕС | ES | — | — | Power supply systems | |||
ЕТ | ET | Constant-current sources | УР1101ЕТ51 | TSM1051 | |||
ЕУ | EU | — | — | Controller for switched-mode power supplies | КР1033ЕУ2 | TDA4605 | |
ЕФ | EF | — | — | — | Adjustable-voltage switched-mode power supply devices | К1290ЕФ1АП | LM2576-ADJ |
Ж | Zh | Multi-functional devices [lower-alpha 7] | |||||
ЖА | ZhA | Analog multi-functional devices [lower-alpha 8] | — | — | — | К2ЖА375 | |
ЖВ | ZhV | Analog and logical multi-functional devices [lower-alpha 9] | — | — | — | ||
ЖЕ | ZhE | Analog and pulse multi-functional devices [lower-alpha 9] | — | — | — | ||
ЖГ | ZhG | Logical and pulse multi-functional devices [lower-alpha 10] | — | — | — | К1ЖГ453 | |
ЖИ | ZhI | Pulse multi-functional devices [lower-alpha 10] | — | — | — | ||
ЖК | ZhK | Analog, logical, and pulse multi-functional devices [lower-alpha 9] | — | — | — | ||
ЖЛ | ZhL | Logical multi-functional devices [lower-alpha 10] | — | — | — | K5ЖЛ012 | |
И | I | Digital circuits | |||||
ИА | IA | — | — | Arithmetic logic unit [lower-alpha 11] | 1815ИА1 | ||
ИВ | IV | — | Encoder [lower-alpha 12] | 1564ИВ3 | 54HC147 | ||
ИД | ID | Decoder | КР1533ИД4 | 74ALS155 | |||
ИЕ | IE | Counter | 533ИЕ7 | 54LS193 | |||
ИК | IK | Combination of digital circuits [lower-alpha 5] [lower-alpha 11] | К145ИК1901 | ||||
ИЛ | IL | Half adder | K5ИЛ011 | ||||
ИМ | IM | — | Full adder [lower-alpha 13] | КМ155ИМ3 | 6483 | ||
ИН | IN | — | — | — | Interface receiver, transmitter, or transceiver | 5559ИН1Т | MAX232 |
ИП | IP | Other digital circuits (e.g. parity bit checker, multiplier) [lower-alpha 11] | К155ИП3 | 74181 | |||
ИР | IR | Register, shift register | К561ИР2 | 4015 | |||
ИС | IS | Full adder [lower-alpha 13] | — | — | — | 1ИС061А | |
ИФ | IF | — | — | — | Function expander (e.g. multiplier) | 1825ИФ1У | |
ИШ | ISh | Encoder [lower-alpha 12] | — | — | — | К5ИШ011 | |
К | K | Switches and Multiplexers | |||||
КД | KD | Diode-based switch | — | — | — | ||
КЗ | KZ | Opto-electronic switch | — | — | — | ||
КН | KN | — | Analogue switches and Multiplexers for voltages [lower-alpha 14] | КР590КН1 | |||
КП | KP | Other switches and multiplexers (especially digital; also optocouplers) | К561КП1 | 4052 | |||
КТ | KT | Transistor-based switch | Analogue switches and Multiplexers for currents [lower-alpha 14] | К561КТ3А | 4066 | ||
Л | L | Logic gates | |||||
ЛА | LA | — | NAND gates [lower-alpha 15] | К155ЛА3 | 7400 | ||
ЛБ | LB | NAND gates and NOR gates [lower-alpha 15] | К134ЛБ1 | ||||
ЛД | LD | — | Expander [lower-alpha 16] | К155ЛД1 | 7460 | ||
ЛЕ | LE | — | NOR gates [lower-alpha 15] | КР1533ЛЕ1 | 74ALS02 | ||
ЛИ | LI | AND gates | КР531ЛИ3 | 74S11 | |||
ЛК | LK | AND-OR-NOT/AND-OR gates [lower-alpha 17] | 199ЛК3 | ||||
ЛЛ | LL | OR gates | К555ЛЛ1 | 74LS32 | |||
ЛМ | LM | — | OR-NOT/OR gates | 1500ЛМ101 | Fairchild F100101 | ||
ЛН | LN | NOT gates | 136ЛН1 | 54L04 | |||
ЛП | LP | Expander [lower-alpha 16] | Other gates (e.g. XOR gates, majority function gates) [lower-alpha 18] | К555ЛП5 | 74LS86 | ||
ЛР | LR | AND-OR-NOT gates | КР531ЛР11 | 74S51 | |||
ЛС | LS | AND-OR gates [lower-alpha 17] | К561ЛС2 | 4019 | |||
ЛЭ | LE | Other gates [lower-alpha 18] | — | — | — | К1ЛЭ941 | |
М | M | Modulators | |||||
МА | MA | Amplitude modulators (e.g. ring modulator) | КР140МА1 | ||||
МИ | MI | Pulse modulators | К854МИ1 | ||||
МП | MP | Other modulators (e.g. quadrature amplitude modulator) | 1324МП1У | AD8346 | |||
МС | MS | Frequency modulators | 219МС2 | ||||
МФ | MF | Phase modulators | К1327МФ1У | ||||
Н | N | Arrays of electronic components | |||||
НД | ND | Diode array | 542НД1 | ||||
НЕ | NE | Capacitor array | 820НЕ1Б | ||||
НК | NK | Array with a combination of components | 2НК041 | ||||
НП | NP | — | Array of other components | ||||
НР | NR | — | Resistor array [lower-alpha 19] | К301НР1А | |||
НС | NS | Resistor array [lower-alpha 19] | — | — | — | 3НС011А | |
НТ | NT | Transistor array | КР198НТ5Б | ||||
НФ | NF | — | — | Array with a specific function (e.g. resistor ladder) | 317НФ1 | ||
П | P | Signal converters | |||||
ПА | PA | — | Digital-to-analogue converter [lower-alpha 20] | КР572ПА7Б | AD7541 | ||
ПВ | PV | — | Analogue-to-digital converter [lower-alpha 21] | 1108ПВ1 | TDC1013J | ||
ПД | PD | Decoding converter (incl. Digital-to-analogue converter [lower-alpha 20] ) | Pulse duration converter | К1102ПД1 | |||
ПЕ | PE | — | — | Analogue frequency multiplier | |||
ПК | PK | Coding converter (incl. Analogue-to-digital converter [lower-alpha 21] ) | — | — | — | К1ПК201 | |
— | — | Analogue frequency divider [lower-alpha 22] | К1055ПК1Т1 | ||||
ПЛ | PL | — | — | Frequency synthesizer | КР1508ПЛ1 | NJ88C30 | |
ПМ | PM | Signal shape converter | Power converter (including attenuators) | КР1446ПМ1 | |||
ПН | PN | Voltage converter | Voltage or current converter [lower-alpha 23] | К252ПН1 | |||
ПП | PP | Other converter (including photovoltaic optocouplers) | КР572ПП2 | ICL7104 | |||
ПР | PR | — | Code converter | К155ПР7 | 74185 | ||
ПС | PS | Frequency converter (including frequency mixers, analog multipliers) [lower-alpha 24] | К174ПС1 | ||||
ПТ | PT | — | — | — | Digital potentiometer | 1315ПТ11Т | AD8400 |
ПУ | PU | Signal level converter (including impedance matching, logic voltage level shifters) | К561ПУ4 | 4050 | |||
ПФ | PF | Phase converter [lower-alpha 25] | Functional signal converter (e.g. digital autocorrelator) | 5862ПФ1Н4 | |||
ПЦ | PTs, PC | — | — | Digital frequency divider | К555ПЦ1 | 74LS292 | |
Р | R | Memory devices [lower-alpha 26] | |||||
РА | RA | — | Analogue memory | Associative memory | К589РА04 | Intel 3104 | |
РВ | RV | — | Matrix of ROM elements (e.g. diode matrix) [lower-alpha 27] | К539РВ1А | |||
РГ | RG | — | — | — | FIFO [lower-alpha 28] | 1642РГ1РБМ | IDT7205L |
РД | RD | — | — | — | DRAM [lower-alpha 29] | 1654РД2 | MT48LC4M16A2P |
РЕ | RE | — | ROM (including PROM) [lower-alpha 30] | Mask ROM [lower-alpha 30] | К155РЕ21 | 74187 | |
РК | RK | — | — | — | Multi-ported RAM (e.g. dual-ported RAM) [lower-alpha 28] | 1642РК1УБМ | IDT7005 |
РМ | RM | — | Matrix of RAM elements [lower-alpha 27] | К188РМ1 | |||
РН | RN | — | — | — | NVRAM | ||
РП | RP | — | Other memory devices (e.g. dual-ported RAM) [lower-alpha 28] | Other memory devices | К1800РП6 | Motorola MC10806 | |
РР | RR | — | — | EEPROM [lower-alpha 30] | EEPROM or flash memory with a parallel interface [lower-alpha 31] | КМ1609РР1 | 2816 |
РС | RS | — | — | — | EEPROM or flash memory with a serial interface [lower-alpha 31] | 1644PC1ATБM | 24FC65 |
РТ | RT | — | — | PROM [lower-alpha 30] | 530РТ1 | 54S287 | |
РУ | RU | — | RAM (DRAM or SRAM) | SRAM [lower-alpha 29] | КР537РУ16А | 6264 | |
РФ | RF | — | — | EPROM [lower-alpha 30] | КМ573РФ8А | 27256 | |
РЦ | RTs, RC | — | — | Bubble memory | К1602РЦ2Б | ||
С | S | Comparators | |||||
СА | SA | Amplitude (signal level) comparator [lower-alpha 32] | Voltage comparator | К1401СА1 | LM339 | ||
СВ | SV | Timing comparator | К2СВ381 | ||||
СК | SK | — | — | Amplitude (signal level) comparator (including sample-and-hold circuits) [lower-alpha 32] | КР1100СК3 | LF398 | |
СП | SP | — | Other comparator (especially digital comparator) | Other comparator | К555СП1 | 74LS85 | |
СС | SS | Frequency comparator | К284СС2Б | ||||
СФ | SF | Phase comparator [lower-alpha 33] | — | ||||
СЦ | STs | — | — | — | Digital comparator | ||
Т | T | Triggers / Flip-Flops | |||||
ТВ | TV | — | JK flip-flops | К555ТВ6 | 74LS107 | ||
ТД | TD | Dynamic flip-flops | |||||
ТК | TK | Combination of triggers / flip-flops | K5TK011 | ||||
ТЛ | TL | — | Schmitt triggers [lower-alpha 34] | К555ТЛ2 | 74LS14 | ||
ТМ | TM | — | D flip-flops | КР1533ТМ2 | 74ALS74 | ||
ТП | TP | — | Other triggers / flip-flops | 290ТП1 | |||
ТР | TR | RS flip-flops | КР1533ТР2 | 74ALS279 | |||
ТС | TS | T flip-flops [lower-alpha 35] | — | — | — | 2ТС051 | |
ТТ | TT | — | T flip-flops [lower-alpha 35] | 6500ТТ1 | |||
ТШ | TSh | Schmitt triggers [lower-alpha 34] | — | — | — | К1ТШ181Г | |
У | U | Amplifiers | |||||
УБ | UB | Video amplifier | — | — | — | К1УБ181Б | |
— | — | — | Instrumentation amplifier | К1463УБ1Р | |||
УВ | UV | — | Radio frequency (high frequency) amplifier | 171УВ2 | μA733 | ||
УГ | UG | — | — | — | Low-noise amplifier | ||
УД | UD | — | Operational amplifier or Differential amplifier [lower-alpha 36] | Operational amplifier | КР140УД7 | μA741 | |
УЕ | UE | — | Unity gain buffer (e.g. emitter follower) [lower-alpha 37] | КР1436УЕ1 | |||
УИ | UI | Pulse amplifier | КР1054УИ1 | TBA2800 | |||
УК | UK | — | — | Wideband amplifier (e.g. video amplifier) | К174УК1 | TCA660 | |
УЛ | UL | — | Read amplifier (e.g. for magnetic core memory, magnetic tape, magnetic disks) | КР1075УЛ1 | TA7784P | ||
УМ | UM | — | Indicator amplifier | 564УМ1 | 4054 | ||
УН | UN | — | Audio frequency (low frequency) amplifier | КР1438УН2 | LM386 | ||
УП | UP | Other amplifier (e.g. log amplifier, limiter, gyrator) | 174УП2 | TL441CN | |||
УР | UR | — | Intermediate-frequency amplifier | К174УР1 | TBA120 | ||
УС | US | Sine wave amplifier | — | Differential amplifier [lower-alpha 36] | К157УС1 | ||
УТ | UT | DC amplifier [lower-alpha 36] | КР119УТ1 | ||||
УУ | UU | — | — | — | Programmable-gain amplifier | К1463УУ1 | AD620 |
УФ | UF | — | — | — | Functional amplifier (e.g. Log amplifier) | 1313УФ1АУ | |
УЭ | UE | Unity gain buffer (e.g. emitter follower) [lower-alpha 37] | — | — | — | К2УЭ182 | |
Ф | F | Filters | |||||
ФА | FA | — | — | — | Adaptive filter | ||
ФБ | FB | — | — | — | Band-pass filter [lower-alpha 38] | ||
ФВ | FV | High-pass filter | 528ФВ1 | ||||
ФГ | FG | Band-stop filter [lower-alpha 39] | — | — | — | ||
ФЕ | FE | — | Band-pass filter [lower-alpha 38] | — | 811ФЕ1 | ||
ФМ | FM | — | — | — | Programmable filter | ||
ФН | FN | Low-pass filter | И1146ФН1 | ||||
ФП | FP | Band-pass filter [lower-alpha 38] | Other filter | КР1146ФП1 | MK5912 | ||
ФР | FR | — | Band-stop filter [lower-alpha 39] | ||||
ФС | FS | Smoothing filter | — | — | — | ||
ФУ | FU | — | — | — | Universal filter | 1478ФУ1Т | MAX274 |
Х | Kh, X, H | Multi-functional devices [lower-alpha 7] | |||||
ХА | KhA, XA, HA | — | Analog multi-functional devices [lower-alpha 8] | КР1568ХА3 | TDA4555 | ||
ХБ | KhB, XB, HB | — | — | — | Multifunctional device for radio, television, tape recorders, displays | К1879ХБ1Я | |
ХВ | KhV, XV, HV | — | — | — | Multi-functional device for automotive electronics | К1323ХВ1Р | L497B |
ХД | KhD, XD, HD | — | — | — | Multi-functional device for telecommunications | 1892ХД1Я | |
ХИ | KhI, XI, HI | — | — | Array of analogue cells [lower-alpha 40] | Multi-functional device for photo- and video cameras | ||
ХК | KhK, XK, HK | — | Combination of multifunctional devices (including mixed-signal multi-functional devices) [lower-alpha 9] | КР1051ХК1 | TDA8432 | ||
ХЛ | KhL, XL, HL | — | Digital multi-functional devices [lower-alpha 10] | КР1568ХЛ2 | TDA3048 | ||
ХМ | KhM, XM, HM | — | — | Array of digital cells (gate array) [lower-alpha 4] | — | 1515ХМ1 | |
ХН | KhN, XN, HN | — | — | Array of analogue cells [lower-alpha 2] | — | Н1451ХН3-А502 | |
ХП | KhP, XP, HP | — | Other multi-functional devices (e.g. programmable logic devices) | Other multi-functional devices [lower-alpha 41] | КР1556ХП4 | PAL16R4 | |
ХР | KhR, XR, HR | — | — | — | Multi-functional circuit for household devices | К1331ХР1П | |
ХС | KhS, XS, HS | — | — | — | Programmable logic devices [lower-alpha 42] | 5577ХС2Т | Actel RH1020 |
ХТ | KhT, XT, HT | — | — | Array of mixed-signal cells [lower-alpha 3] | — | 5515ХТ1У | |
ХХ | KhKh, XX, HH | — | — | — | Multi-functional devices for power electronics | 1474ХХ3Т | HCPL316J |
Ц | Ts, C | Charge-coupled device image sensors | |||||
ЦЛ | TsL, CL | — | — | One-dimensional (linear) image sensor | 1200ЦЛ3 | CCD131 | |
ЦМ | TsM, CM | — | — | Two-dimensional image sensor | К1200ЦМ1 | CCD211 | |
ЦП | TsP, CP | — | — | Other image sensor | |||
Ч | Ch | Transducers / Sensors | |||||
ЧВ | ChV | — | — | — | Humidity sensor | ||
ЧГ | ChG | — | — | — | Gas sensor | ||
ЧД | ChD | — | — | — | Pressure sensor | К1245ЧД1Н3 | |
ЧИ | ChI | — | — | — | Ionizing radiation sensor | ||
ЧМ | ChM | — | — | — | Mechanical displacement sensor [lower-alpha 43] | 1243ЧМ3Н4 | |
ЧП | ChP | — | — | — | Other sensor | К5331ЧП01Т | |
ЧТ | ChT | — | — | — | Temperature sensor [lower-alpha 44] | 1019ЧТ4У | LM135 |
ЧЭ | ChE | — | — | — | Electromagnetic field sensor | ||
Ш | Sh | Delay devices [lower-alpha 1] | |||||
ШП | ShP | Other delay device | — | — | — | ||
ШС | ShS | Active or passive delay device | — | — | — | ||
Э | E | Delay devices [lower-alpha 1] | |||||
ЭМ | EM | — | — | — | Passive delay device | ||
ЭП | EP | — | — | — | Other delay device | ||
ЭР | ER | — | — | — | Active delay device (e.g. bucket-brigade device) | ||
Я | Ya | Memory devices [lower-alpha 26] | |||||
ЯЛ | YaL | Magnetic memory device | — | — | — | ||
ЯП | YaP | Other memory device (e.g. RAM or ROM memory element) | — | — | — | K5ЯП011 | |
ЯМ | YaM | Matrix of memory elements (RAM or ROM) [lower-alpha 27] | — | — | — | К1ЯМ881 | |
Group | Description | Example | ||
---|---|---|---|---|
Russian | English | 2010 | Original | Equivalent |
А | A | Signal generators and oscillators | ||
АН | AN | Programmable signal generators | 5025АН015 | |
АС | AS | Sine wave generators (including harmonic oscillators) | 1508АС01А5 | |
В | V | Computing devices | ||
ВВ | VV | Input / output interface (e.g. serial or parallel interface) | 2011ВВ034 | |
ВК | VK | Microcontroller | 1921ВК035 | LM4F132 |
ВМ | VM | Microprocessor | 1907ВМ014 | |
ВН | VN | Digital signal processor [lower-alpha 6] | 1967ВН034 | ADSP-TS201 |
ВХ | VKh, VH | Other computing devices | 5022ВХ014 | |
Е | E | Power supply devices | ||
ЕА | EA | Adjustable-voltage Switched-mode power supply devices | 5320ЕА015 | ADP3050 |
ЕВ | EV | Fixed-voltage Switched-mode power supply devices | 5319ЕВ025 | |
ЕМ | EM | Negative fixed-voltage linear regulator | 5321ЕМ06А1 | 79Mxx |
ЕН | EN | Positive fixed-voltage Linear voltage regulator | 1380ЕН013 | |
ЕР | ER | Positive adjustable-voltage linear regulator | 1378ЕР014 | |
ЕС | ES | Voltage reference devices | 1369ЕС01В4 | |
ЕТ | ET | Constant current sources | 3005ЕТ015 | |
ЕУ | EU | Controller for switched-mode power supplies | 1363ЕУ045 | |
ЕХ | EKh, EX | Other power supply devices | K5300ЕХ025 | |
К | K | Switches and Multiplexers | ||
КВ | KV | Opto-electronic switch | 2609КВ014 | |
КИ | KI | Intelligent switch (power switch with protection circuits) | К1376КИ021 | BTS141 |
КН | KN | Analogue switches and Multiplexers | 5023КН015 | ADG731 |
КР | KR | Switch with galvanic isolation | 3012КР014 | |
КТ | KT | Current switch | 5333КТ014 | µPD16305 |
КХ | KKh, KX | Other switches and multiplexers | 1923КХ028 | |
Н | N | Signal converters | ||
НА | NA | Digital-to-analogue converter [lower-alpha 20] | 430НА014 | |
НВ | NV | Analogue-to-digital converter [lower-alpha 21] | 5023НВ04В5 | |
НМ | NM | Mechanical displacement sensor [lower-alpha 43] | К1382НМ025 | |
НН | NN | Voltage or current converter [lower-alpha 23] | К5331НН015 | |
НС | NS | Frequency converter [lower-alpha 24] | 5546НС015 | |
НТ | NT | Temperature sensor [lower-alpha 44] | 5306НТ015В | DS18B20 |
НХ | NKh, NX | Other converters | К5331НХ011 | |
Р | R | Memory devices | ||
РА | RA | SRAM | 1669РА03Н4 | ACT-S512K8 |
РЕ | RE | NVRAM | 1666РЕ014 | |
РР | RR | EEPROM or Flash memory with a parallel interface | 9023РР018 | |
РС | RS | EEPROM or Flash memory with a serial interface | 5578РС015 | |
РТ | RT | PROM | 5578РТ015 | |
С | S | Comparators | ||
СА | SA | Voltage comparator | 1495СА065 | |
СХ | SKh, SX | Other comparator (including supply voltage supervisors) | 5322СХ085 | |
Т | T | Multi-functional devices | ||
ТА | TA | Analog multi-functional devices [lower-alpha 8] | ||
ТВ | TV | Digital multi-functional devices [lower-alpha 10] | 5861ТВ01Н4 | |
ТК | TK | Combination of multifunctional devices (including mixed-signal multi-functional devices) [lower-alpha 9] | 5201ТК015 | |
ТМ | TM | Array of analogue cells [lower-alpha 2] | ||
ТН | TN | Array of digital cells (gate array) [lower-alpha 4] | 5529ТН114 | |
ТР | TR | Array of mixed-signal cells [lower-alpha 3] | 5400ТР045А | |
ТС | TS | Programmable logic devices [lower-alpha 42] | 5578ТС024 | |
ТХ | TKh, TX | Other multi-functional devices [lower-alpha 41] | 1888ТХ018 | |
У | U | Amplifiers | ||
УА | UA | Operational amplifier | 1494УА02Б3 | |
УМ | UM | Functional amplifier (e.g. Log amplifier) | 1259УМ015 | AD640 |
УН | UN | Power amplifier | К1496УН014 | TDA2822 |
УР | UR | Intermediate-frequency amplifier | 5421УР015 | |
УС | US | Differential amplifier | 544УС015 | |
УХ | UKh, UX | Other amplifier | 1288УХ025 |
The package of an integrated circuit was generally not indicated in the 1973 designation, except:
Package | Description | |
---|---|---|
Russian | English | |
А | A | Plastic flatpack |
Б | B | Bare chip without package |
Е | E | Metal-polymer dual in-line package (DIP) |
И | I | Glass-ceramic flatpack |
Л | L | Pin grid array (PGA) or ball grid array (BGA) |
М | M | Metal-ceramic dual in-line package (DIP) |
Н | N | Ceramic leadless chip carrier |
Р | R | Plastic dual in-line package (DIP) |
С | S | Glass-ceramic dual in-line package (DIP) |
Ф | F | Small outline package |
Package | Description | |
---|---|---|
Russian | English | |
Н | N | Bare chip without package |
П | P | Single in-line package (SIP), zig-zag in-line package (ZIP) |
Р | R | Dual in-line package (DIP) |
С | S | Round metal can package |
Т | T | Flatpack, small outline package (SOP), quad flat package (QFP) |
У | U | Chip carrier |
Ф | F | Pin grid array (PGA) |
Х | Kh, X | ISO 7816 smart cards |
Я | Ya | Ball grid array (BGA) |
Package | Description | |
---|---|---|
Russian | English | |
1 | Single in-line package (SIP), zig-zag in-line package (ZIP) | |
2 | Dual in-line package (DIP) | |
3 | Round metal can package | |
4 | Flatpack, small outline package (SOP), quad flat package (QFP) | |
5 | Chip carrier | |
6 | Pin grid array (PGA) | |
7 | ISO 7816 smart cards | |
8 | Ball grid array (BGA) | |
Н | N | Bare chip without package |
For bare chips without a package an additional digit indicates the constructive variant. [6] : 16 [9] [10] [11] For the 1973 and 1980 standards the variant digit is appended with a dash after the designation (e.g. К712РВ2-1 and Б533ТМ2-2, respectively). For the 2000 and 2010 standards the variant digit follows immediately after the package designation N (e.g. 5862ПФ1Н4 and 1374МХ01Н1, respectively).
Constructive variant | Description |
---|---|
1 | with flexible wires (flying wire) |
2 | on polyamide carrier tape (film bonding technology) |
3 | with rigid wires (beam lead technology) |
4 | on a wafer (uncut) |
5 | on a wafer, cut without loss of orientation (e.g. pasted on a carrier) |
6 | with bonding pads without wires |
A manufacturer designation was introduced only with the 2000 standard. [12] As part of the type designation the manufacturer is required only for a second-source integrated circuit that was "developed and produced according to an independently developed design and technological documentation, and corresponding to the technical requirements of the originally developed original microcircuit". [12] : 9 Manufacturer logos [26] [27] are more common.
Designation | Manufacturer | |
---|---|---|
Russian | English | |
АК | AK | Almaz, Kotovsk, Russia [12] [28] |
АМ | AM | Angstrem, Zelenograd, Russia [12] [29] |
АР | AR | AS Alfa, Riga, Latvia [30] |
ББ | BB | OAO "BZPP", Bolkhov, Russia [12] [31] [32] |
БМ | BM | OAO "Integral", Minsk, Belarus [33] |
БС | BS | SIT, Bryansk, Russia [34] |
ВК | VK | AO "Voshod", Kaluga, Russia [12] [35] |
ВН | VN | NPP "Vostok", Novosibirsk, Russia [12] [36] |
ВЭ | VE | NIIET, Voronezh, Russia [12] [37] |
ГГ | GG | OAO "GZPP", Georgiyevsk, Russia [12] |
ГР | GR | TOO "Gelion", Ryazan, Russia [12] |
ДЛ | DL | AOOT "Disk", Livny, Russia [12] |
ДМ | DM | OAO "Diod", Moscow, Russia [12] |
ИМ | IM | "Transistor" branch of OAO "Integral", Minsk, Belarus [38] |
ИП | IP | AO ZPP, Ioshkar-Ola, Russia [12] |
ИС | IS | AO NII "Inmikrotekh", Saransk, Russia [12] |
ИУ | IU | OAO "Iskra", Ulyanovsk, Russia [12] [39] |
КБ | KB | ZAO "Group Kremny", Bryansk, Russia [12] [40] [41] |
МД | MD | AO PMZR, Moscow, Russia [12] |
МК | MK | ZAO "OKB MEL", Kaluga, Russia [42] |
ММ | MM | OAO "NIIME and Mikron", Moscow, Russia [12] [43] |
МО | MO | Optron, Moscow, Russia [12] [44] |
МФ | MF | FREP MEI, Moscow, Russia [12] |
МЭ | ME | "Eldag", Makhachkala, Russia [12] |
НИ | NI | MVC [45] / NIIIS, [46] Nizhny Novgorod, Russia |
НМ | NM | NII "Delta", Moscow, Russia [12] |
НН | NN | AO "NZPP", Novosibirsk, Russia [12] [47] |
НП | NP | NZPP-KBR, Nalchik, Russia [12] [48] |
НС | NS | NPP "Salyut", Nizhny Novgorod, Russia [12] |
НТ | NT | AO "NIIPP", Tomsk, Russia [12] [49] |
ПМ | PM | OAO "Pulsar", Moscow, Russia [50] |
РА | RA | RD Alfa, Riga, Latvia [51] |
СО | SO | Orbita, Saransk, Russia [52] |
СП | SP | ZAO Svetlana Semiconductors, Saint Petersburg, Russia [53] |
ЭВ | EV | OAO "VZPP-S", Voronezh, Russia [54] |
ЭП | EP | OAO "Exiton", Moscow, Russia [55] |
Other manufacturers which as of 2016 used a version of the Soviet integrated circuit designation include NTC Module, [56] MCST, [57] ELVEES Multicore, [58] Fizika, [59] Sapfir, [60] NPK TTs, [61] and Progress, [62] all of them in Moscow, as well as PKK Milandr, [63] Soyuz, [64] and NIITAP in Zelenograd, [65] SKTB ES Voronezh, [66] Proton [67] and Proton-Impuls [68] Oryol, Planeta Novgorod, [69] NIIEMP Penza, [70] Eltom Tomilino, [71] Krip Tekhno Alexandrov, [72] DELS Minsk, [73] Kvazar Kyiv, [74] Krystal Kyiv, [16] Elektronni Komponenti Ivano-Frankivsk, [75] Dnepr Kherson, [76] and Foton Tashkent. [77]
Although not strictly part of the designation, a number of markings are often found on integrated circuit packages: [78] [14]
Marking | Description | |
---|---|---|
Russian | English | |
ОП | OP | Engineering or pre-production sample |
ОС | OS | Military acceptance, higher quality and reliability |
ОСД | OSD | Military acceptance, higher quality and reliability, extended lifetime |
ОСМ | OSM | Military acceptance, highest quality and reliability, available in only in small quantities |
С | S | Military acceptance, used in the 1970s instead of ОС |
Military acceptance here means that the integrated circuit can be used in applications where its failure would be catastrophic and where repair or exchange is difficult or impossible (e.g. aerospace applications).
For mask-programmed devices (e.g. gate arrays, mask-programmed single-chip microcontrollers, mask ROMs) a three- or four-digit mask number follows the type designation (e.g. К1801ВП1-014).
For bare chips a one-digit constructive variant identifier follows the type designation.
A date code is usually printed on the package. In the early 1970s the date code consisted of a Roman numeral for the month and a two-digit year (e.g. IX 72). Later the month was given as one or two digits (e.g. 5-73 or 0386). In the late 1980s most plants switched to a 4-digit code with a 2-digit year followed by a 2-digit month (e.g. 8909) or a 2-digit week (e.g. 9051). Overall, the date code format was not strictly enforced. Several series of integrated circuits (e.g. 1408, 1821) bore an IEC 60062 letter and digit code (e.g. A1 for January 1990).
The Romanization of Russian is standardized, but there are at least 12 standards to choose from. Fortunately, the Soviet integrated circuit designation uses a subset of the Cyrillic alphabet where only a few letters are ambiguous:
The more-common romanizations in bold are given as alternatives in the above tables.
Е and Э are both romanized as E.
The French romanization of Russian and the German romanization of Russian differ in some letters from the one used in English. For instance, the Russian КР580ВМ80A becomes KR580VM80A in English and French but KR580WM80A in German literature.
An integrated circuit, also known as a microchip or IC, is a small electronic device made up of multiple interconnected electronic components such as transistors, resistors, and capacitors. These components are etched onto a small piece of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality.
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors. Its name signifies that transistors perform both the logic function and the amplifying function, as opposed to earlier resistor–transistor logic (RTL) and diode–transistor logic (DTL).
The 7400 series is a popular logic family of transistor–transistor logic (TTL) integrated circuits (ICs).
Pro Electron or EECA is the European type designation and registration system for active components.
TMS320 is a blanket name for a series of digital signal processors (DSPs) from Texas Instruments. It was introduced on April 8, 1983 through the TMS32010 processor, which was then the fastest DSP on the market.
Am2900 is a family of integrated circuits (ICs) created in 1975 by Advanced Micro Devices (AMD). They were constructed with bipolar devices, in a bit-slice topology, and were designed to be used as modular components each representing a different aspect of a computer control unit (CCU). By using the bit slicing technique, the Am2900 family was able to implement a CCU with data, addresses, and instructions to be any multiple of 4 bits by multiplying the number of ICs. One major problem with this modular technique was that it required a larger number of ICs to implement what could be done on a single CPU IC. The Am2901 chip included an arithmetic logic unit (ALU) and 16 4-bit processor register slices, and was the "core" of the series. It could count using 4 bits and implement binary operations as well as various bit-shifting operations. The Am2909 was a 4-bit-slice address sequencer that could generate 4-bit addresses on a single chip, and by using n of them, it was able to generate 4n-bit addresses. It had a stack that could store a microprogram counter up to 4 nest levels, as well as a stack pointer.
The KR580VM80A is a Soviet microprocessor, a clone of the Intel 8080 CPU. Different versions of this CPU were manufactured beginning in the late 1970s, the earliest known use being in the SM1800 computer in 1979. Initially called the K580IK80 (К580ИК80), it was produced in a 48-pin planar metal-ceramic package. Later, a version in a PDIP-40 package was produced and was named the KR580IK80A (КР580ИК80А). The pin layout of the latter completely matched that of Intel's 8080A CPU. In 1986 this CPU received a new part number to conform with the 1980 Soviet integrated circuit designation and became known as the KR580VM80A (КР580ВМ80А), the number it is most widely known by today. Normal clock frequency for the K580IK80A is 2 MHz, with speeds up to 2.5 MHz for the KR580VM80A. The KR580IK80A was manufactured in a 6 µm process. In the later KR580VM80A the feature size was reduced to 5 µm and the die became 20% smaller.
The 1801 series CPUs were a family of 16-bit Soviet microprocessors based on the indigenous Elektronika NC microarchitecture cores, but binary compatible with DEC's PDP-11 machines. First released in 1980, various models and variants of the series were among the most popular Soviet microprocessors and dominated embedded systems and military applications of the 1980s. They were also used in widely different areas such as graphing calculators and industrial CNCs, but arguably their most well-known use was in several Soviet general-purpose mini- and microcomputer designs like the SM EVM, DVK, UKNC, and BK families. Due to being the CPU of the popular Elektronika BK home computer, used in its late years as a demo machine, as well as the DVK micros that often offered a first glimpse into the UNIX world, this processor achieved something of a cult status among Soviet and then Russian programmers, and to a lesser extent, international programmers.
The K1810VM86 is a Soviet 16-bit microprocessor, a clone of the Intel 8086 CPU with which it is binary and pin compatible. It was developed between 1982 and 1985. The original K1810VM86 supported a clock frequency of up to 5 MHz while up to 8 MHz were allowed for the later K1810VM86M. The K1810VM86 was manufactured plastic 40-pin dual in-line package or in a 40-pin ceramic dual in-line package. A clone of the related Intel 8088 with its 8-bit bus was manufactured as the K1810VM88, also in plastic and ceramic packages.
A semiconductor package is a metal, plastic, glass, or ceramic casing containing one or more discrete semiconductor devices or integrated circuits. Individual components are fabricated on semiconductor wafers before being diced into die, tested, and packaged. The package provides a means for connecting it to the external environment, such as printed circuit board, via leads such as lands, balls, or pins; and protection against threats such as mechanical impact, chemical contamination, and light exposure. Additionally, it helps dissipate heat produced by the device, with or without the aid of a heat spreader. There are thousands of package types in use. Some are defined by international, national, or industry standards, while others are particular to an individual manufacturer.
The KOMDIV-64 is a family of 64-bit microprocessors developed by the Scientific Research Institute of System Development (NIISI) of the Russian Academy of Sciences and manufactured by TSMC, UMC, GlobalFoundries, and X-Fab. The KOMDIV-64 processors are primarily intended for industrial and high-performance computing applications.
The KOMDIV-32 is a family of 32-bit microprocessors developed and manufactured by the Scientific Research Institute of System Development (NIISI) of the Russian Academy of Sciences. The manufacturing plant of NIISI is located in Dubna on the grounds of the Kurchatov Institute. The KOMDIV-32 processors are intended primarily for spacecraft applications and many of them are radiation hardened (rad-hard).
Multicore is a series of 32-bit microprocessors with embedded DSP cores developed by ELVEES, Russia. The microprocessor is a MIPS32 core or an ARM Cortex-A9 core. Some of the processors in the series are radiation hardened (rad-hard) for space applications.
The year 1943 was marked by many events that left an imprint on the history of Soviet and Russian Fine Arts.
Angstrem JSC is a Moscow-based company involved in the design and fabrication of electronic products and semiconductors. It produced a range of Soviet-era integrated circuits. After the fall of the Soviet Union, in 90s it has produced a line of calculators and bank cards.
PJSC Svetlana is a company based in Saint Petersburg, Russia. It is primarily involved in the research, design, and manufacturing of electronic and microelectronic instruments. Svetlana is part of Ruselectronics. The name of the company is said to originate from the words for 'light of an incandescent lamp'.
VEB Kombinat Mikroelektronik Erfurt was an important manufacturer of active electronic components in East Germany. It should not be confused with the more well-known VEB Kombinat Robotron Dresden which used integrated circuits from Kombinat Mikroelektronik in its computers.
The electronics industry in the Socialist Republic of Romania was characterized by stronger ties to Western Europe when compared to other countries in the Eastern Bloc due to the drive of the Romanian leadership towards greater autonomy from the Soviet Union.
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