TO-126

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Front and back of a transistor in a TO-126 package. SD339c MSN.jpg
Front and back of a transistor in a TO-126 package.

TO-126 is a type of semiconductor package for devices with three pins, such as transistors. [1] The package is rectangular with a hole in the middle to allow for easy mounting to a board or a heat sink. On one side of the package typically a metal sheet is exposed, with the transistor die bonded to the other side of the metal sheet inside the package. [2] This allows for an efficient heat transfer from the transistor die to an external heat sink but also implies that the metal sheet is electrically connected to the die (for a bipolar junction transistor usually the collector is connected to this metal sheet).

Contents

History and origin

The JEDEC TO-126 descriptor is derived from the original full name for the package: Transistor Outline Package, Case Style 126. [3] In the updated JEDEC outline system, the package is numbered as TO-225AA. [2]

STMicroelectronics refers to this package style as SOT-32. [4]

National Standards

Size comparison of BJT transistor packages: TO-3 (upper-right), TO-126, TO-92, SOT-23 (lower-left) Transistorer (cropped).jpg
Size comparison of BJT transistor packages: TO-3 (upper-right), TO-126, TO-92, SOT-23 (lower-left)
Standards organizationStandardDesignation for TO-126
JEDEC JEP95 [5] TO-225AA
IEC IEC 60191 [6] A56
DIN DIN 41869 [7] 12A3
Gosstandart GOST 18472—88 [8] KT-27 [lower-alpha 1]
Rosstandart GOST R 57439—2017 [9]
Kombinat Mikroelektronik Erfurt TGL 11811 [6] N
TGL 26713/09 [6] H1B
  1. Russian: КТ-27

See also

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TO-92 Small and cheap semiconductor package often used for transistors

The TO-92 is a widely used style of semiconductor package mainly used for transistors. The case is often made of epoxy or plastic, and offers compact size at a very low cost.

TO-220 Power semiconductor through-hole package

The TO-220 is a style of electronic package used for high-powered, through-hole components with 0.1 inches (2.54 mm) pin spacing. The "TO" designation stands for "transistor outline". TO-220 packages have three leads. Similar packages with two, four, five or seven leads are also manufactured. A notable characteristic is a metal tab with a hole, used in mounting the case to a heatsink, allowing the component to dissipate more heat than one constructed in a TO-92 case. Common TO-220-packaged components include discrete semiconductors such as transistors and silicon-controlled rectifiers, as well as integrated circuits.

2N3055

The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity.

TO-3 Metal can semiconductor package for power semiconductors

In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. TO stands for "Transistor Outline" and relates to a series of technical drawings produced by JEDEC.

2N3904 Common NPN bipolar junction transistor

The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds.

2N2222 Common NPN bipolar junction transistor

The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.

BC548

The BC548 is a general-purpose NPN bipolar junction transistor commonly used in European and American electronic equipment. It is notably often the first type of bipolar transistor hobbyists encounter and is often featured in designs in hobby electronics magazines where a general-purpose transistor is required. The BC548 is low in cost and widely available.

A semiconductor package is a metal, plastic, glass, or ceramic casing containing one or more discrete semiconductor devices or integrated circuits. Individual components are fabricated on semiconductor wafers before being diced into die, tested, and packaged. The package provides a means for connecting it to the external environment, such as printed circuit board, via leads such as lands, balls, or pins; and protection against threats such as mechanical impact, chemical contamination, and light exposure. Additionally, it helps dissipate heat produced by the device, with or without the aid of a heat spreader. There are thousands of package types in use. Some are defined by international, national, or industry standards, while others are particular to an individual manufacturer.

TO-18

In electronics, TO-18 is a designation for a style of transistor metal case. The case is more expensive than the similarly sized plastic TO-92 package. The name is from JEDEC, signifying Transistor Outline Package, Case Style 18.

DO-204

DO-204 is a family of diode semiconductor packages defined by JEDEC. This family comprises lead-mounted axial devices with round leads. Generally a diode will have a line painted near the cathode end.

TO-5

In electronics, TO-5 is a designation for a standardized metal semiconductor package used for transistors and some integrated circuits. The TO element stands for "transistor outline" and refers to a series of technical drawings produced by JEDEC. The first commercial silicon transistors, the 2N696 and 2N697 from Fairchild Semiconductor, came in a TO-5 package.

TO-66 Smaller variant of the TO-3 package

TO-66 is a type of semiconductor package for devices with three connections, such as transistors. The shape is similar to the TO-3 package, but the size is smaller. The TO-66 package is made entirely of metal and is commonly used by silicon controlled rectifiers and power transistors. In Europe, it was popularly used by the complementary germanium power transistors AD161/AD162.

2N696

The 2N696 and 2N697 were the first silicon transistors manufactured in Silicon Valley, in 1958, by Fairchild Semiconductor. Fairchild introduced itself to the world via its advertisements for these transistors, which were identical except for a post-manufacturing binning on current gain.

TO-8

In electronics, TO-8 is a designation for a standardized metal semiconductor package. TO in TO-8 stands for "transistor outline" and refers to a series of technical drawings produced by JEDEC. The TO-8 package is noticeably larger than the more common TO-5 package. While originally designed for medium power transistors such as the 2N1483 series or the AD136, it is more commonly used for integrated circuits and sensors.

References

  1. BD135; BD137; BD139; NPN power transistors (PDF), Philips Semiconductors, 1999, retrieved 2013-12-09
  2. 1 2 Bill Roehr (2001), AN1040/D: Mounting Considerations For Power Semiconductors (PDF), On Semiconductor, retrieved 2014-01-25
  3. "JEDEC TO-126 package specification" (PDF). JEDEC . May 1968. Archived from the original (PDF) on June 18, 2017.
  4. MJE340 MJE350 Complementary silicon power transistors (PDF), STMicroelectronics
  5. "TO-225" (PDF). JEDEC. Archived from the original (PDF) on 2016-04-10. Retrieved 2021-06-21.
  6. 1 2 3 "TGL 26713/09: Gehäuse für Halbleiterbauelemente - Bauform H" [Outline drawings for semiconductor devices; Type H](PDF) (in German). Leipzig: Verlag für Standardisierung. June 1988. Retrieved 2021-06-15.
  7. "NPN Silicon Transistors BD135 BD137 BD139" (PDF). Siemens. Retrieved 2021-08-20.
  8. "ГОСТ 18472—88 ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" [GOST 18472—88 Semiconductor devices - basic dimensions](PDF) (in Russian). Rosstandart. 1988. p. 56. Retrieved 2021-06-17.
  9. "ГОСТ Р 57439—2017 ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" [GOST R 57439—2017 Semiconductor devices - basic dimensions](PDF) (in Russian). Gosstandart. 2017. p. 70-71. Retrieved 2021-06-17.