Boron arsenide

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Boron arsenide
Boron-arsenide-unit-cell-1963-CM-3D-balls.png
Identifiers
3D model (JSmol)
ChemSpider
PubChem CID
  • InChI=1S/AsB/c1-2
    Key: DBKNIEBLJMAJHX-UHFFFAOYSA-N
  • [B][As]
Properties
BAs
Molar mass 85.733 g/mol [1]
AppearanceBrown cubic crystals [1]
Density 5.22 g/cm3 [1]
Melting point 1,100 °C (2,010 °F; 1,370 K) decomposes [1]
Insoluble
Band gap 1.82 eV
Thermal conductivity 1300 W/(m·K) (300 K)
Structure [2]
Cubic (sphalerite), cF8, No. 216
F43m
a = 0.4777 nm
4
Related compounds
Other anions
Boron nitride
Boron phosphide
Boron antimonide
Other cations
Aluminium arsenide
Gallium arsenide
Indium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Boron subarsenide
B12As2 3D side view.jpg
Identifiers
Properties
B12As2
Molar mass 279.58 g/mol
Density 3.56 g/cm3 [3]
Insoluble
Band gap 3.47 eV
Structure [4]
Rhombohedral, hR42, No. 166
R3m
a = 0.6149 nm, b = 0.6149 nm, c = 1.1914 nm
α = 90°, β = 90°, γ = 120°
6
Related compounds
Other anions
Boron suboxide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds are known, such as the subarsenide B12As2. Chemical synthesis of cubic BAs is very challenging and its single crystal forms usually have defects.

Contents

Properties

BAs is a cubic (sphalerite) semiconductor in the III-V family with a lattice constant of 0.4777 nm and an indirect band gap of 1.82 eV. Cubic BAs is reported to decompose to the subarsenide B12As2 at temperatures above 920 °C. [5] Boron arsenide has a melting point of 2076 °C. The thermal conductivity of BAs is very high: around 1300 W/(m·K) at 300 K.

The basic physical properties of cubic BAs have been experimentally measured: Band gap (1.82 eV), optical refractive index (3.29 at wavelength 657 nm), elastic modulus (326 GPa), shear modulus, Poisson's ratio, thermal expansion coefficient (3.85×10−6/K), and heat capacity. It can be alloyed with gallium arsenide to produce ternary and quaternary semiconductors. [6]

BAs has high electron and hole mobility, >1000 cm2/V/second, unlike silicon which has high electron mobility, but low hole mobility. [7]

In 2023, a study in journal Nature reported that subjected to high pressure BAs decrease its thermal conductivity contrary to the typical increase seen in most materials. [8] [9] [10]

Boron subarsenide

Boron arsenide also occurs as subarsenides, including the icosahedral boride B12As2. It belongs to R3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As–As chains. It is a wide-bandgap semiconductor (3.47 eV) with the extraordinary ability to "self-heal" radiation damage. [11] This form can be grown on substrates such as silicon carbide. [12] Another use for solar cell fabrication [6] [13] was proposed, but it is not currently used for this purpose.

Applications

Boron arsenide is most attractive for use in electronics thermal management. Experimental integration with gallium nitride transistors to form GaN-BAs heterostructures has been demonstrated and shows better performance than the best GaN HEMT devices on silicon carbide or diamond substrates. Manufacturing BAs composites was developed as highly conducting and flexible thermal interfaces. [14]

First-principles calculations have predicted that the thermal conductivity of cubic BAs is remarkably high, over 2,200 W/(m·K) at room temperature, which is comparable to that of diamond and graphite. [15] Subsequent measurements yielded a value of only 190 W/(m·K) due to the high density of defects. [16] [17] More recent first-principles calculations incorporating four-phonon scattering predict a thermal conductivity of 1400 W/(m·K). [18] Later, defect-free boron arsenide crystals have been experimentally realized and measured with an ultrahigh thermal conductivity of 1300 W/(m·K), consistent with theory predictions. Crystals with small density of defects have shown thermal conductivity of 900–1000 W/(m·K). [19] [20]

The cubic-shaped boron arsenide has been discovered to be better at conducting heat and electricity than silicon, as well as reportedly better than silicon at conducting both electrons and its positively charged counterpart, the "electron-hole." [21]

Related Research Articles

<span class="mw-page-title-main">Boron nitride</span> Refractory compound of boron and nitrogen with formula BN

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.

A semiconductor is a material that has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity generally falls as its temperature rises; metals behave in the opposite way. In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.

<span class="mw-page-title-main">Band gap</span> Energy range in a solid where no electron states exist

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.

<span class="mw-page-title-main">Gallium arsenide</span> Chemical compound

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

<span class="mw-page-title-main">Silicon carbide</span> Extremely hard semiconductor containing silicon and carbon

Silicon carbide (SiC), also known as carborundum, is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

<span class="mw-page-title-main">Strontium titanate</span> Chemical compound

Strontium titanate is an oxide of strontium and titanium with the chemical formula SrTiO3. At room temperature, it is a centrosymmetric paraelectric material with a perovskite structure. At low temperatures it approaches a ferroelectric phase transition with a very large dielectric constant ~104 but remains paraelectric down to the lowest temperatures measured as a result of quantum fluctuations, making it a quantum paraelectric. It was long thought to be a wholly artificial material, until 1982 when its natural counterpart—discovered in Siberia and named tausonite—was recognised by the IMA. Tausonite remains an extremely rare mineral in nature, occurring as very tiny crystals. Its most important application has been in its synthesized form wherein it is occasionally encountered as a diamond simulant, in precision optics, in varistors, and in advanced ceramics.

<span class="mw-page-title-main">Cadmium arsenide</span> Chemical compound

Cadmium arsenide (Cd3As2) is an inorganic semimetal in the II-V family. It exhibits the Nernst effect.

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.

<span class="mw-page-title-main">Doping (semiconductor)</span> Intentional introduction of impurities into an intrinsic semiconductor

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.

<span class="mw-page-title-main">Graphene</span> Hexagonal lattice made of carbon atoms

Graphene is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds.

<span class="mw-page-title-main">Aluminium nitride</span> Chemical compound

Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.

<span class="mw-page-title-main">Superhard material</span> Material with Vickers hardness exceeding 40 gigapascals

A superhard material is a material with a hardness value exceeding 40 gigapascals (GPa) when measured by the Vickers hardness test. They are virtually incompressible solids with high electron density and high bond covalency. As a result of their unique properties, these materials are of great interest in many industrial areas including, but not limited to, abrasives, polishing and cutting tools, disc brakes, and wear-resistant and protective coatings.

<span class="mw-page-title-main">Material properties of diamond</span>

Diamond is the allotrope of carbon in which the carbon atoms are arranged in the specific type of cubic lattice called diamond cubic. It is a crystal that is transparent to opaque and which is generally isotropic. Diamond is the hardest naturally occurring material known. Yet, due to important structural brittleness, bulk diamond's toughness is only fair to good. The precise tensile strength of bulk diamond is little known; however, compressive strength up to 60 GPa has been observed, and it could be as high as 90–100 GPa in the form of micro/nanometer-sized wires or needles, with a corresponding maximum tensile elastic strain in excess of 9%. The anisotropy of diamond hardness is carefully considered during diamond cutting. Diamond has a high refractive index (2.417) and moderate dispersion (0.044) properties that give cut diamonds their brilliance. Scientists classify diamonds into four main types according to the nature of crystallographic defects present. Trace impurities substitutionally replacing carbon atoms in a diamond's crystal structure, and in some cases structural defects, are responsible for the wide range of colors seen in diamond. Most diamonds are electrical insulators and extremely efficient thermal conductors. Unlike many other minerals, the specific gravity of diamond crystals (3.52) has rather small variation from diamond to diamond.

Indium gallium arsenide (InGaAs) is a ternary alloy of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

<span class="mw-page-title-main">Crystallographic defects in diamond</span>

Imperfections in the crystal lattice of diamond are common. Such defects may be the result of lattice irregularities or extrinsic substitutional or interstitial impurities, introduced during or after the diamond growth. The defects affect the material properties of diamond and determine to which type a diamond is assigned; the most dramatic effects are on the diamond color and electrical conductivity, as explained by the electronic band structure.

<span class="mw-page-title-main">Single crystal</span> Material with a continuous, unbroken crystal lattice

In materials science, a single crystal is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no grain boundaries. The absence of the defects associated with grain boundaries can give monocrystals unique properties, particularly mechanical, optical and electrical, which can also be anisotropic, depending on the type of crystallographic structure. These properties, in addition to making some gems precious, are industrially used in technological applications, especially in optics and electronics.

<span class="mw-page-title-main">Boron phosphide</span> Chemical compound

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus. It is a semiconductor.

<span class="mw-page-title-main">Tin selenide</span> Chemical compound

Tin selenide, also known as stannous selenide, is an inorganic compound with the formula SnSe. Tin(II) selenide is a typical layered metal chalcogenide as it includes a group 16 anion (Se2−) and an electropositive element (Sn2+), and is arranged in a layered structure. Tin(II) selenide is a narrow band-gap (IV-VI) semiconductor structurally analogous to black phosphorus. It has received considerable interest for applications including low-cost photovoltaics, and memory-switching devices.

<span class="mw-page-title-main">Lin Lanying</span> Chinese materials scientist

Lin Lanying, was a Chinese electrical engineer, materials scientist, physicist, and politician. She is called the "mother of aerospace materials" and the "mother of semiconductor materials" in China.

References

  1. 1 2 3 4 Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.53. ISBN   1-4398-5511-0.
  2. ↑ Perri, J. A; La Placa, S; Post, B (1958). "New group III-group V compounds: BP and BAs". Acta Crystallographica. 11 (4): 310. doi: 10.1107/S0365110X58000827 .
  3. ↑ Villars, Pierre (ed.) "B12As2 (B6As) Crystal Structure" in Inorganic Solid Phases, Springer, Heidelberg (ed.) SpringerMaterials
  4. ↑ Morosin, B; Aselage, T. L; Feigelson, R. S (2011). "Crystal Structure Refinements of Rhombohedral Symmetry Materials Containing Boron-Rich Icosahedra". MRS Proceedings. 97. doi:10.1557/PROC-97-145.
  5. ↑ Chu, T. L; Hyslop, A. E (1974). "Preparation and Properties of Boron Arsenide Films". Journal of the Electrochemical Society. 121 (3): 412. Bibcode:1974JElS..121..412C. doi:10.1149/1.2401826.
  6. 1 2 Geisz, J. F; Friedman, D. J; Olson, J. M; Kurtz, Sarah R; Reedy, R. C; Swartzlander, A. B; Keyes, B. M; Norman, A. G (2000). "BGaInAs alloys lattice matched to GaAs". Applied Physics Letters. 76 (11): 1443. Bibcode:2000ApPhL..76.1443G. doi:10.1063/1.126058.
  7. ↑ Shin, Jungwoo; Gamage, Geethal Amila; Ding, Zhiwei; Chen, Ke; Tian, Fei; Qian, Xin; Zhou, Jiawei; Lee, Hwijong; Zhou, Jianshi; Shi, Li; Nguyen, Thanh (2022-07-22). "High ambipolar mobility in cubic boron arsenide". Science. 377 (6604): 437–440. Bibcode:2022Sci...377..437S. doi:10.1126/science.abn4290. ISSN   0036-8075. PMID   35862526. S2CID   250952849.
  8. ↑ "Surprising heat transfer behaviour seen in new semiconductor under pressure". Physics World. 2023-01-27. Retrieved 2023-01-30.
  9. ↑ Li, Suixuan; Qin, Zihao; Wu, Huan; Li, Man; Kunz, Martin; Alatas, Ahmet; Kavner, Abby; Hu, Yongjie (23 November 2022). "Anomalous thermal transport under high pressure in boron arsenide". Nature . 612 (7940): 459–464. Bibcode:2022Natur.612..459L. doi:10.1038/s41586-022-05381-x. ISSN   1476-4687. PMID   36418403. S2CID   253838186.
  10. ↑ Remmel, Ariana (2 January 2023). "Boron arsenide breaks the rules under pressure". C&EN . Vol. 101, no. 1. p. 6. doi:10.1021/cen-10101-scicon3 . Retrieved 2 April 2023.
  11. ↑ Carrard, M; Emin, D; Zuppiroli, L (1995). "Defect clustering and self-healing of electron-irradiated boron-rich solids". Physical Review B. 51 (17): 11270–11274. Bibcode:1995PhRvB..5111270C. doi:10.1103/PhysRevB.51.11270. PMID   9977852.
  12. ↑ Chen, H.; Wang, G.; Dudley, M.; Xu, Z.; Edgar, J. H.; Batten, T.; Kuball, M.; Zhang, L.; Zhu, Y. (2008). "Single-Crystalline B12As2 on m-plane (1100) 15R-SiC". Applied Physics Letters. 92 (23): 231917. Bibcode:2008ApPhL..92w1917C. doi:10.1063/1.2945635. hdl: 2097/2186 .
  13. ↑ Boone, J. L. and Vandoren, T. P. (1980) Boron arsenide thin film solar cell development, Final Report, Eagle-Picher Industries, Inc., Miami, OK. abstract.
  14. ↑ Cui, Ying; Qin, Zihao; Wu, Huan; Li, Man; Hu, Yongjie (2021). "Flexible thermal interface based on self-assembled boron arsenide for high-performance thermal management". Nature Communications. 12 (1): 1284. Bibcode:2021NatCo..12.1284C. doi:10.1038/s41467-021-21531-7. PMC   7904764 . PMID   33627644..
  15. ↑ An unlikely competitor for diamond as the best thermal conductor, Phys.org news (July 8, 2013)
  16. ↑ Lv, Bing; Lan, Yucheng; Wang, Xiqu; Zhang, Qian; Hu, Yongjie; Jacobson, Allan J; Broido, David; Chen, Gang; Ren, Zhifeng; Chu, Ching-Wu (2015). "Experimental study of the proposed super-thermal-conductor: BAs" (PDF). Applied Physics Letters. 106 (7): 074105. Bibcode:2015ApPhL.106g4105L. doi:10.1063/1.4913441. hdl: 1721.1/117852 . OSTI   1387754. S2CID   54074851.
  17. ↑ Zheng, Qiang; Polanco, Carlos A.; Du, Mao-Hua; Lindsay, Lucas R.; Chi, Miaofang; Yan, Jiaqiang; Sales, Brian C. (6 September 2018). "Antisite Pairs Suppress the Thermal Conductivity of BAs". Physical Review Letters. 121 (10): 105901. arXiv: 1804.02381 . Bibcode:2018PhRvL.121j5901Z. doi:10.1103/PhysRevLett.121.105901. PMID   30240242. S2CID   206316624.
  18. ↑ Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin (2017). "Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids". Physical Review B. 96 (16): 161201. Bibcode:2017PhRvB..96p1201F. doi: 10.1103/PhysRevB.96.161201 .
  19. ↑ Li, Sheng; Zheng, Qiye; Lv, Yinchuan; Liu, Xiaoyuan; Wang, Xiqu; Huang, Pinshane Y.; Cahill, David G.; Lv, Bing (2018). "High thermal conductivity in cubic boron arsenide crystals". Science. 361 (6402): 579–581. Bibcode:2018Sci...361..579L. doi: 10.1126/science.aat8982 . PMID   29976796.
  20. ↑ Tian, Fei; Song, Bai; Chen, Xi; Ravichandran, Navaneetha K; Lv, Yinchuan; Chen, Ke; Sullivan, Sean; Kim, Jaehyun; Zhou, Yuanyuan; Liu, Te-Huan; Goni, Miguel; Ding, Zhiwei; Sun, Jingying; Gamage, Geethal Amila Gamage Udalamatta; Sun, Haoran; Ziyaee, Hamidreza; Huyan, Shuyuan; Deng, Liangzi; Zhou, Jianshi; Schmidt, Aaron J; Chen, Shuo; Chu, Ching-Wu; Huang, Pinshane Y; Broido, David; Shi, Li; Chen, Gang; Ren, Zhifeng (2018). "Unusual high thermal conductivity in boron arsenide bulk crystals". Science. 361 (6402): 582–585. Bibcode:2018Sci...361..582T. doi: 10.1126/science.aat7932 . PMID   29976797.
  21. ↑ General, Ryan (18 August 2022). "Chinese MIT professor helps discover 'game changer' months after espionage charges". NextShark. Retrieved 19 August 2022.
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