Hafnium nitrate

Last updated
Hafnium nitrate
Hafnium nitrate.svg
Names
Other names
Hafnium tetranitrate
Identifiers
3D model (JSmol)
ChemSpider
EC Number
  • 239-536-7
PubChem CID
  • InChI=1S/Hf.4NO3/c;4*2-1(3)4/q+4;4*-1
    Key: TZNXTUDMYCRCAP-UHFFFAOYSA-N
  • [N+](=O)([O-])[O-].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-].[Hf+4]
Properties
Hf(NO3)4
Molar mass 426.53 g/mol
AppearanceWhite crystals
moderately soluble [1]
Hazards
GHS labelling:
GHS-pictogram-rondflam.svg GHS-pictogram-exclam.svg
Danger
H272, H315, H319, H335
P210, P220, P221, P305, P338, P405, P501
Related compounds
Related compounds
Thorium nitrate, Zirconium nitrate, titanium nitrate
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Hafnium(IV) nitrate is an inorganic compound, a salt of hafnium and nitric acid with the chemical formula Hf(NO3)4. [2] [3] [4]

Contents

Synthesis

Hafnium nitrate can be prepared by the reaction of hafnium tetrachloride and dinitrogen pentoxide. [5]

Properties

Hafnium nitrate is slightly volatile, and can be sublimed at 110 °C and 0.1 mmHg. [6] Hafnium nitrate decomposes on heating (≥ 160°C) to HfO(NO3)2 and then to HfO2. [6]

Applications

Hafnium nitrate can be used for the preparation of materials containing hafnium dioxide. [6]

Related Research Articles

The actinide or actinoid series encompasses the 15 metallic chemical elements with atomic numbers from 89 to 103, actinium through lawrencium. The actinide series derives its name from the first element in the series, actinium. The informal chemical symbol An is used in general discussions of actinide chemistry to refer to any actinide.

<span class="mw-page-title-main">Hafnium</span> Chemical element, symbol Hf and atomic number 72

Hafnium is a chemical element with the symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals. Its existence was predicted by Dmitri Mendeleev in 1869, though it was not identified until 1923, by Dirk Coster and George de Hevesy, making it the penultimate stable element to be discovered. Hafnium is named after Hafnia, the Latin name for Copenhagen, where it was discovered.

<span class="mw-page-title-main">Zirconium</span> Chemical element, symbol Zr and atomic number 40

Zirconium is a chemical element with the symbol Zr and atomic number 40. The name zirconium is derived from the name of the mineral zircon, the most important source of zirconium. The word is related to Persian zargun. It is a lustrous, grey-white, strong transition metal that closely resembles hafnium and, to a lesser extent, titanium. Zirconium is mainly used as a refractory and opacifier, although small amounts are used as an alloying agent for its strong resistance to corrosion. Zirconium forms a variety of inorganic and organometallic compounds such as zirconium dioxide and zirconocene dichloride, respectively. Five isotopes occur naturally, four of which are stable. Zirconium compounds have no known biological role.

<span class="mw-page-title-main">Group 4 element</span> Group of chemical elements

Group 4 is the second group of transition metals in the periodic table. It contains the four elements titanium (Ti), zirconium (Zr), hafnium (Hf), and rutherfordium (Rf). The group is also called the titanium group or titanium family after its lightest member.

<span class="mw-page-title-main">Dinitrogen pentoxide</span> Chemical compound

Dinitrogen pentoxide is the chemical compound with the formula N2O5. It is one of the binary nitrogen oxides, a family of compounds that only contain nitrogen and oxygen. It exists as colourless crystals that sublime slightly above room temperature, yielding a colorless gas.

<span class="mw-page-title-main">Hafnium diboride</span> Chemical compound

Hafnium diboride is a type of ceramic composed of hafnium and boron that belongs to the class of ultra-high temperature ceramics. It has a melting temperature of about 3250 °C. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and zirconium diboride. It is a grey, metallic looking material. Hafnium diboride has a hexagonal crystal structure, a molar mass of 200.11 grams per mole, and a density of ~10.5 g/cm3.

In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant, as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k", instead of "high-κ".

<span class="mw-page-title-main">Hafnium tetrachloride</span> Chemical compound

Hafnium(IV) chloride is the inorganic compound with the formula HfCl4. This colourless solid is the precursor to most hafnium organometallic compounds. It has a variety of highly specialized applications, mainly in materials science and as a catalyst.

<span class="mw-page-title-main">Zirconium carbide</span> Chemical compound

Zirconium carbide (ZrC) is an extremely hard refractory ceramic material, commercially used in tool bits for cutting tools. It is usually processed by sintering.

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.

<span class="mw-page-title-main">Silver sulfate</span> Chemical compound

Silver sulfate is the inorganic compound with the formula Ag2SO4. It is a white solid with low solubility in water.

<span class="mw-page-title-main">Hafnium(IV) oxide</span> Chemical compound

Hafnium(IV) oxide is the inorganic compound with the formula HfO
2
. Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.

<span class="mw-page-title-main">Molten salt</span> Salt that has melted, often by heating to high temperatures

Molten salt is salt which is solid at standard temperature and pressure but liquified due to elevated temperature. A salt that is liquid even at standard temperature and pressure is usually called a room-temperature ionic liquid, and molten salts are technically a class of ionic liquids.

<span class="mw-page-title-main">Zirconium diboride</span> Chemical compound

Zirconium diboride (ZrB2) is a highly covalent refractory ceramic material with a hexagonal crystal structure. ZrB2 is an ultra-high temperature ceramic (UHTC) with a melting point of 3246 °C. This along with its relatively low density of ~6.09 g/cm3 (measured density may be higher due to hafnium impurities) and good high temperature strength makes it a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and hafnium diboride.

Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO4.

Ultra-high-temperature ceramics (UHTCs) are a type of refractory ceramics that that can withstand extremely high temperatures without degrading, often above 2,000 °C. They also often have high thermal conductivities and are highly resistant to thermal shock, meaning they can withstand sudden and extreme changes in temperature without cracking or breaking. Chemically, they are usually borides, carbides, nitrides, and oxides of early transition metals.

<span class="mw-page-title-main">Titanium(IV) nitrate</span> Chemical compound

Titanium nitrate is the inorganic compound with formula Ti(NO3)4. It is a colorless, diamagnetic solid that sublimes readily. It is an unusual example of a volatile binary transition metal nitrate. Ill defined species called titanium nitrate are produced upon dissolution of titanium or its oxides in nitric acid.

<span class="mw-page-title-main">Zirconium nitrate</span> Chemical compound

Zirconium nitrate is a volatile anhydrous transition metal nitrate salt of zirconium with formula Zr(NO3)4. It has alternate names of zirconium tetranitrate, or zirconium(IV) nitrate.

Hafnium compounds are compounds containing the element hafnium (Hf). Due to the lanthanide contraction, the ionic radius of hafnium(IV) (0.78 ångström) is almost the same as that of zirconium(IV) (0.79 angstroms). Consequently, compounds of hafnium(IV) and zirconium(IV) have very similar chemical and physical properties. Hafnium and zirconium tend to occur together in nature and the similarity of their ionic radii makes their chemical separation rather difficult. Hafnium tends to form inorganic compounds in the oxidation state of +4. Halogens react with it to form hafnium tetrahalides. At higher temperatures, hafnium reacts with oxygen, nitrogen, carbon, boron, sulfur, and silicon. Some compounds of hafnium in lower oxidation states are known.

References

  1. "Hafnium Nitrate (CAS: 15509-05-4) | Stanford Advanced Materials". samaterials.com. Retrieved 29 October 2021.
  2. "Hafnium(IV) nitrate". Sigma Aldrich . Retrieved 29 October 2021.
  3. "Hafnium Nitrate". American Elements . Retrieved 29 October 2021.
  4. The Metallurgy of Hafnium. Naval Reactors, Division of Reactor Development, U.S. Atomic Energy Commission. 1960. p. 31. Retrieved 29 October 2021.
  5. Zhuang, Weiwei; Conley, John F.; Ono, Yoshi; Evans, David R.; Solanki, R. (January 2002). "Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition". Integrated Ferroelectrics. 48 (1): 3–12. Bibcode:2002InFer..48....3Z. doi:10.1080/10584580215449. S2CID   50290009.
  6. 1 2 3 Conley, J. F.; Ono, Y.; Zhuang, W.; Tweet, D. J.; Gao, W.; Mohammed, S. K.; Solanki, R. (2002). "Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate". Electrochemical and Solid-State Letters . 5 (5): C57. doi:10.1149/1.1462875. ISSN   1099-0062 . Retrieved 29 October 2021.
HNO3 He
LiNO3 Be(NO3)2 B(NO3)4 RONO2 NO3-
NH4NO3
HOONO2 FNO3
+F
Ne
NaNO3 Mg(NO3)2 Al(NO3)3
Al(NO3)4
SiPS ClONO2
+Cl
Ar
KNO3 Ca(NO3)2 Sc(NO3)3 Ti(NO3)4 VO(NO3)3 Cr(NO3)3 Mn(NO3)2 Fe(NO3)2
Fe(NO3)3
Co(NO3)2
Co(NO3)3
Ni(NO3)2 CuNO3
Cu(NO3)2
Zn(NO3)2 Ga(NO3)3 GeAsSe BrNO3
+Br
Kr
RbNO3 Sr(NO3)2 Y(NO3)3 Zr(NO3)4 NbO(NO3)3 MoO2(NO3)2 Tc Ru(NO3)3 Rh(NO3)3 Pd(NO3)2
Pd(NO3)4
AgNO3
Ag(NO3)2
Cd(NO3)2 In(NO3)3 Sn(NO3)4 Sb(NO3)3 Te INO3
+IO3
Xe(NO3)2
CsNO3 Ba(NO3)2   Lu(NO3)3 Hf(NO3)4 TaO(NO3)3 WO2(NO3)2 ReO3NO3 Os Ir3O(NO3)10 Pt(NO3)2
Pt(NO3)4
Au(NO3)3 Hg2(NO3)2
Hg(NO3)2
TlNO3
Tl(NO3)3
Pb(NO3)2 Bi(NO3)3
BiO(NO3)
Po(NO3)4 AtRn
FrNO3 Ra(NO3)2  LrRfDbSgBhHsMtDsRgCnNhFlMcLvTsOg
La(NO3)3 Ce(NO3)3
Ce(NO3)4
Pr(NO3)3 Nd(NO3)3 Pm(NO3)3 Sm(NO3)3 Eu(NO3)3 Gd(NO3)3 Tb(NO3)3 Dy(NO3)3 Ho(NO3)3 Er(NO3)3 Tm(NO3)3 Yb(NO3)3
Ac(NO3)3 Th(NO3)4 PaO2(NO3)3 UO2(NO3)2 Np(NO3)4 Pu(NO3)4 Am(NO3)3 Cm(NO3)3 Bk(NO3)3 Cf(NO3)3 EsFmMdNo