Hafnium disulfide

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Hafnium disulfide
HfS2chips.jpg
HfS2 structure.png
Names
IUPAC name
Hafnium disulfide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.038.738 OOjs UI icon edit-ltr-progressive.svg
PubChem CID
  • InChI=1S/Hf.2S Yes check.svgY
  • S=[Hf]=S
Properties
HfS2
Molar mass 246.62 g/mol [1]
AppearanceBrown solid
Density 6.03 g/cm3 [1]
Band gap ~1.8 eV (indirect) [2]
Structure
hP3, P3m1, No 164 [3]
a = 0.363 nm, c = 0.584 nm
1
Related compounds
Other anions
Hafnium dioxide
Other cations
Tungsten disulfide
Molybdenum disulfide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. [4] High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. [5] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C. [6]

Related Research Articles

<span class="mw-page-title-main">Hafnium</span> Chemical element, symbol Hf and atomic number 72

Hafnium is a chemical element; it has symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals. Its existence was predicted by Dmitri Mendeleev in 1869, though it was not identified until 1922, by Dirk Coster and George de Hevesy. making it one of the last two stable elements to be discovered. Hafnium is named after Hafnia, the Latin name for Copenhagen, where it was discovered.

<span class="mw-page-title-main">Molybdenum disulfide</span> Chemical compound

Molybdenum disulfide is an inorganic compound composed of molybdenum and sulfur. Its chemical formula is MoS
2
.

<span class="mw-page-title-main">Chalcogenide</span>

A chalcogenide is a chemical compound consisting of at least one chalcogen anion and at least one more electropositive element. Although all group 16 elements of the periodic table are defined as chalcogens, the term chalcogenide is more commonly reserved for sulfides, selenides, tellurides, and polonides, rather than oxides. Many metal ores exist as chalcogenides. Photoconductive chalcogenide glasses are used in xerography. Some pigments and catalysts are also based on chalcogenides. The metal dichalcogenide MoS2 is a common solid lubricant.

<span class="mw-page-title-main">Hafnium tetrachloride</span> Chemical compound

Hafnium(IV) chloride is the inorganic compound with the formula HfCl4. This colourless solid is the precursor to most hafnium organometallic compounds. It has a variety of highly specialized applications, mainly in materials science and as a catalyst.

<span class="mw-page-title-main">Copper monosulfide</span> Chemical compound

Copper monosulfide is a chemical compound of copper and sulfur. It was initially thought to occur in nature as the dark indigo blue mineral covellite. However, it was later shown to be rather a cuprous compound, formula Cu+3S(S2). CuS is a moderate conductor of electricity. A black colloidal precipitate of CuS is formed when hydrogen sulfide, H2S, is bubbled through solutions of Cu(II) salts. It is one of a number of binary compounds of copper and sulfur (see copper sulfide for an overview of this subject), and has attracted interest because of its potential uses in catalysis and photovoltaics.

<span class="mw-page-title-main">Tungsten disulfide</span> Chemical compound

Tungsten disulfide is an inorganic chemical compound composed of tungsten and sulfur with the chemical formula WS2. This compound is part of the group of materials called the transition metal dichalcogenides. It occurs naturally as the rare mineral tungstenite. This material is a component of certain catalysts used for hydrodesulfurization and hydrodenitrification.

<span class="mw-page-title-main">Hafnium carbide</span> Chemical compound

Hafnium carbide (HfC) is a chemical compound of hafnium and carbon. Previously the material was estimated to have a melting point of about 3,900 °C. More recent tests have been able to conclusively prove that the substance has an even higher melting point of 3,958 °C exceeding those of tantalum carbide and tantalum hafnium carbide which were both previously estimated to be higher. However, it has a low oxidation resistance, with the oxidation starting at temperatures as low as 430 °C. Experimental testing in 2018 confirmed the higher melting point yielding a result of 3,982 (±30°C) with a small possibility that the melting point may even exceed 4,000°C.

<span class="mw-page-title-main">Zirconium disulfide</span> Chemical compound

Zirconium(IV) sulfide is the inorganic compound with the formula ZrS2. It is a violet-brown solid. It adopts a layered structure similar to that of cadmium iodide.

<span class="mw-page-title-main">Zirconium diboride</span> Chemical compound

Zirconium diboride (ZrB2) is a highly covalent refractory ceramic material with a hexagonal crystal structure. ZrB2 is an ultra-high temperature ceramic (UHTC) with a melting point of 3246 °C. This along with its relatively low density of ~6.09 g/cm3 (measured density may be higher due to hafnium impurities) and good high temperature strength makes it a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and hafnium diboride.

Copper sulfides describe a family of chemical compounds and minerals with the formula CuxSy. Both minerals and synthetic materials comprise these compounds. Some copper sulfides are economically important ores.

<span class="mw-page-title-main">Titanium disulfide</span> Inorganic chemical compound

Titanium disulfide is an inorganic compound with the formula TiS2. A golden yellow solid with high electrical conductivity, it belongs to a group of compounds called transition metal dichalcogenides, which consist of the stoichiometry ME2. TiS2 has been employed as a cathode material in rechargeable batteries.

Ultra-high-temperature ceramics (UHTCs) are a type of refractory ceramics that can withstand extremely high temperatures without degrading, often above 2,000 °C. They also often have high thermal conductivities and are highly resistant to thermal shock, meaning they can withstand sudden and extreme changes in temperature without cracking or breaking. Chemically, they are usually borides, carbides, nitrides, and oxides of early transition metals.

<span class="mw-page-title-main">Molybdenum diselenide</span> Chemical compound

Molybdenum diselenide is an inorganic compound of molybdenum and selenium. Its structure is similar to that of MoS
2
. Compounds of this category are known as transition metal dichalcogenides, abbreviated TMDCs. These compounds, as the name suggests, are made up of a transition metals and elements of group 16 on the periodic table of the elements. Compared to MoS
2
, MoSe
2
exhibits higher electrical conductivity.

<span class="mw-page-title-main">Transition metal dichalcogenide monolayers</span> Thin semiconductors

Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX2, with M a transition-metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te). One layer of M atoms is sandwiched between two layers of X atoms. They are part of the large family of so-called 2D materials, named so to emphasize their extraordinary thinness. For example, a MoS2 monolayer is only 6.5 Å thick. The key feature of these materials is the interaction of large atoms in the 2D structure as compared with first-row transition-metal dichalcogenides, e.g., WTe2 exhibits anomalous giant magnetoresistance and superconductivity.

<span class="mw-page-title-main">Rhenium disulfide</span> Chemical compound

Rhenium disulfide is an inorganic compound of rhenium and sulfur with the formula ReS2. It has a layered structure where atoms are strongly bonded within each layer. The layers are held together by weak Van der Waals bonds, and can be easily peeled off from the bulk material.

Mixed-anion compounds, heteroanionic materials or mixed-anion materials are chemical compounds containing cations and more than one kind of anion. The compounds contain a single phase, rather than just a mixture.

<span class="mw-page-title-main">Cerium(III) sulfide</span> Chemical compound

Cerium(III) sulfide, also known as cerium sesquisulfide, is an inorganic compound with the formula Ce2S3. It is the sulfide salt of cerium(III) and exists as three polymorphs with different crystal structures.

An iodide nitride is a mixed anion compound containing both iodide (I) and nitride ions (N3−). Another name is metalloiodonitrides. They are a subclass of halide nitrides or pnictide halides. Some different kinds include ionic alkali or alkaline earth salts, small clusters where metal atoms surround a nitrogen atom, layered group 4 element 2-dimensional structures, and transition metal nitrido complexes counter-balanced with iodide ions. There is also a family with rare earth elements and nitrogen and sulfur in a cluster.

Hafnium compounds are compounds containing the element hafnium (Hf). Due to the lanthanide contraction, the ionic radius of hafnium(IV) (0.78 ångström) is almost the same as that of zirconium(IV) (0.79 angstroms). Consequently, compounds of hafnium(IV) and zirconium(IV) have very similar chemical and physical properties. Hafnium and zirconium tend to occur together in nature and the similarity of their ionic radii makes their chemical separation rather difficult. Hafnium tends to form inorganic compounds in the oxidation state of +4. Halogens react with it to form hafnium tetrahalides. At higher temperatures, hafnium reacts with oxygen, nitrogen, carbon, boron, sulfur, and silicon. Some compounds of hafnium in lower oxidation states are known.

References

  1. 1 2 Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.66. ISBN   1-4398-5511-0.
  2. Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS2 and HfS2". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.
  3. Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S2−xTex)1-y and Hf(Se2−xTex)1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.
  4. Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS2 transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC   4772098 . PMID   26926098.
  5. Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv: 1611.00895 . doi:10.1007/s12274-017-1636-x. S2CID   99414438.
  6. Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID   95277086.