Names | |
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Systematic IUPAC name Mercury telluride | |
Other names Mercuric telluride, mercury(II) telluride | |
Identifiers | |
3D model (JSmol) | |
ECHA InfoCard | 100.031.905 |
EC Number |
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PubChem CID | |
CompTox Dashboard (EPA) | |
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Properties | |
HgTe | |
Molar mass | 328.19 g/mol |
Appearance | near black cubic crystals |
Density | 8.1 g/cm3 |
Melting point | 670°C |
Structure | |
Sphalerite, cF8 | |
F43m, No. 216 | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). |
Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium. It is a semi-metal related to the II-VI group of semiconductor materials. Alternative names are mercuric telluride and mercury(II) telluride.
HgTe occurs in nature as the mineral form coloradoite.
All properties are at standard temperature and pressure unless stated otherwise. The lattice parameter is about 0.646 nm in the cubic crystalline form. The bulk modulus is about 42.1 GPa. The thermal expansion coefficient is about 5.2×10−6/K. Static dielectric constant 20.8, dynamic dielectric constant 15.1. Thermal conductivity is low at 2.7 W·m2/(m·K). HgTe bonds are weak leading to low hardness values. Hardness 2.7×107 kg/m2. [1] [2] [3]
N-type doping can be achieved with elements such as boron, aluminium, gallium, or indium. Iodine and iron will also dope n-type. HgTe is naturally p-type due to mercury vacancies. P-type doping is also achieved by introducing zinc, copper, silver, or gold. [1] [2]
Mercury telluride was the first topological insulator discovered, in 2007. Topological insulators cannot support an electric current in the bulk, but electronic states confined to the surface can serve as charge carriers. [5]
HgTe bonds are weak. Their enthalpy of formation, around −32kJ/mol, is less than a third of the value for the related compound cadmium telluride. HgTe is easily etched by acids, such as hydrobromic acid. [1] [2]
Bulk growth is from a mercury and tellurium melt in the presence of a high mercury vapour pressure. HgTe can also be grown epitaxially, for example, by sputtering or by metalorganic vapour phase epitaxy. [1] [2]
Nanoparticles of mercury telluride can be obtained via cation exchange from cadmium telluride nanoplatelets. [6]
Tellurium is a chemical element; it has symbol Te and atomic number 52. It is a brittle, mildly toxic, rare, silver-white metalloid. Tellurium is chemically related to selenium and sulfur, all three of which are chalcogens. It is occasionally found in its native form as elemental crystals. Tellurium is far more common in the Universe as a whole than on Earth. Its extreme rarity in the Earth's crust, comparable to that of platinum, is due partly to its formation of a volatile hydride that caused tellurium to be lost to space as a gas during the hot nebular formation of Earth.
Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window. It is usually sandwiched with cadmium sulfide to form a p–n junction solar PV cell.
Cadmium selenide is an inorganic compound with the formula CdSe. It is a black to red-black solid that is classified as a II-VI semiconductor of the n-type. It is a pigment, but applications are declining because of environmental concerns.
Zinc selenide is the inorganic compound with the formula ZnSe. It is a lemon-yellow solid although most samples have a duller color due to the effects of oxidation. It is an intrinsic semiconductor with a band gap of about 2.70 eV at 25 °C (77 °F), equivalent to a wavelength of 459 nm. ZnSe occurs as the rare mineral stilleite, named after Hans Stille.
Hg1−xCdxTe or mercury cadmium telluride is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 eV at room temperature. HgTe is a semimetal, which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.
Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. A grey solid, it is used for manufacture of infrared detectors for thermal imaging. The mineral clausthalite is a naturally occurring lead selenide.
Bismuth telluride is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor, which, when alloyed with antimony or selenium, is an efficient thermoelectric material for refrigeration or portable power generation. Bi2Te3 is a topological insulator, and thus exhibits thickness-dependent physical properties.
Lead telluride is a compound of lead and tellurium (PbTe). It crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. It occurs naturally as the mineral altaite.
Dimethyl telluride is an organotelluride compound, formula (CH3)2Te, also known by the abbreviation DMTe.
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Mercury selenide is a chemical compound of mercury and selenium. It is a grey-black crystalline solid semi-metal with a sphalerite structure. The lattice constant is 0.608 nm.
Germanium telluride (GeTe) is a chemical compound of germanium and tellurium and is a component of chalcogenide glass. It shows semimetallic conduction and ferroelectric behaviour.
Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the electronics industry. Gallium telluride can be made by reacting the elements or by metal organic vapour deposition (MOCVD).
The quantum spin Hall state is a state of matter proposed to exist in special, two-dimensional semiconductors that have a quantized spin-Hall conductance and a vanishing charge-Hall conductance. The quantum spin Hall state of matter is the cousin of the integer quantum Hall state, and that does not require the application of a large magnetic field. The quantum spin Hall state does not break charge conservation symmetry and spin- conservation symmetry.
A topological insulator is a material whose interior behaves as an electrical insulator while its surface behaves as an electrical conductor, meaning that electrons can only move along the surface of the material.
Antimony telluride is an inorganic compound with the chemical formula Sb2Te3. As is true of other pnictogen chalcogenide layered materials, it is a grey crystalline solid with layered structure. Layers consist of two atomic sheets of antimony and three atomic sheets of tellurium and are held together by weak van der Waals forces. Sb2Te3 is a narrow-gap semiconductor with a band gap 0.21 eV; it is also a topological insulator, and thus exhibits thickness-dependent physical properties.
Bismuth selenide is a gray compound of bismuth and selenium also known as bismuth(III) selenide.
Molybdenum(IV) telluride, molybdenum ditelluride or just molybdenum telluride is a compound of molybdenum and tellurium with formula MoTe2, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium.
Photonic topological insulators are artificial electromagnetic materials that support topologically non-trivial, unidirectional states of light. Photonic topological phases are classical electromagnetic wave analogues of electronic topological phases studied in condensed matter physics. Similar to their electronic counterparts, they, can provide robust unidirectional channels for light propagation. The field that studies these phases of light is referred to as topological photonics.
A phosphine telluride refers to organophosphorus compounds with the formula R3PTe (R = alkyl or aryl). They are structurally analogous to phosphine oxides, phosphine sulfides, and phosphine selenides. Unlike other members of this series, the phosphine tellurides are labile with respect to loss of the chalcogen. Aryl-substituted phosphine telluridew tend to lose tellurium easier. Nonetheless, several members have been characterized by X-ray crystallography, which reveals a tetrahedral phosphorus center with a P-Te bond length of 236 picometers. Simple trialkylphosphine tellurides are pale yellow solids.