Mesoscopic physics

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Mesoscopic physics is a subdiscipline of condensed matter physics that deals with materials of an intermediate size. These materials range in size between the nanoscale for a quantity of atoms (such as a molecule) and of materials measuring micrometres. [1] The lower limit can also be defined as being the size of individual atoms. At the microscopic scale are bulk materials. Both mesoscopic and macroscopic objects contain many atoms. Whereas average properties derived from constituent materials describe macroscopic objects, as they usually obey the laws of classical mechanics, a mesoscopic object, by contrast, is affected by thermal fluctuations around the average, and its electronic behavior may require modeling at the level of quantum mechanics. [2] [3]

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A macroscopic electronic device, when scaled down to a meso-size, starts revealing quantum mechanical properties. For example, at the macroscopic level the conductance of a wire increases continuously with its diameter. However, at the mesoscopic level, the wire's conductance is quantized: the increases occur in discrete, or individual, whole steps. During research, mesoscopic devices are constructed, measured and observed experimentally and theoretically in order to advance understanding of the physics of insulators, semiconductors, metals, and superconductors. The applied science of mesoscopic physics deals with the potential of building nanodevices.

Mesoscopic physics also addresses fundamental practical problems which occur when a macroscopic object is miniaturized, as with the miniaturization of transistors in semiconductor electronics. The mechanical, chemical, and electronic properties of materials change as their size approaches the nanoscale, where the percentage of atoms at the surface of the material becomes significant. For bulk materials larger than one micrometre, the percentage of atoms at the surface is insignificant in relation to the number of atoms in the entire material. The subdiscipline has dealt primarily with artificial structures of metal or semiconducting material which have been fabricated by the techniques employed for producing microelectronic circuits. [2] [3]

There is no rigid definition for mesoscopic physics but the systems studied are normally in the range of 100 nm (the size of a typical virus) to 1 000 nm (the size of a typical bacterium): 100 nanometers is the approximate upper limit for a nanoparticle. Thus, mesoscopic physics has a close connection to the fields of nanofabrication and nanotechnology. Devices used in nanotechnology are examples of mesoscopic systems. Three categories of new electronic phenomena in such systems are interference effects, quantum confinement effects and charging effects. [2] [3]

Quantum confinement effects

Quantum confinement effects describe electrons in terms of energy levels, potential wells, valence bands, conduction bands, and electron energy band gaps.

Electrons in bulk dielectric materials (larger than 10 nm) can be described by energy bands or electron energy levels. Electrons exist at different energy levels or bands. In bulk materials these energy levels are described as continuous because the difference in energy is negligible. As electrons stabilize at various energy levels, most vibrate in valence bands below a forbidden energy level, named the band gap. This region is an energy range in which no electron states exist. A smaller amount have energy levels above the forbidden gap, and this is the conduction band.

The quantum confinement effect can be observed once the diameter of the particle is of the same magnitude as the wavelength of the electron's wave function. [4] When materials are this small, their electronic and optical properties deviate substantially from those of bulk materials. [5] As the material is miniaturized towards nano-scale the confining dimension naturally decreases. The characteristics are no longer averaged by bulk, and hence continuous, but are at the level of quanta and thus discrete. In other words, the energy spectrum becomes discrete, measured as quanta, rather than continuous as in bulk materials. As a result, the bandgap asserts itself: there is a small and finite separation between energy levels. This situation of discrete energy levels is called quantum confinement.

In addition, quantum confinement effects consist of isolated islands of electrons that may be formed at the patterned interface between two different semiconducting materials. The electrons typically are confined to disk-shaped regions termed quantum dots. The confinement of the electrons in these systems changes their interaction with electromagnetic radiation significantly, as noted above. [6] [7]

Because the electron energy levels of quantum dots are discrete rather than continuous, the addition or subtraction of just a few atoms to the quantum dot has the effect of altering the boundaries of the bandgap. Changing the geometry of the surface of the quantum dot also changes the bandgap energy, owing again to the small size of the dot, and the effects of quantum confinement. [6]

Interference effects

In the mesoscopic regime, scattering from defects – such as impurities – induces interference effects which modulate the flow of electrons. The experimental signature of mesoscopic interference effects is the appearance of reproducible fluctuations in physical quantities. For example, the conductance of a given specimen oscillates in an apparently random manner as a function of fluctuations in experimental parameters. However, the same pattern may be retraced if the experimental parameters are cycled back to their original values; in fact, the patterns observed are reproducible over a period of days. These are known as universal conductance fluctuations.

Time-resolved mesoscopic dynamics

Time-resolved experiments in mesoscopic dynamics: the observation and study, at nanoscales, of condensed phase dynamics such as crack formation in solids, phase separation, and rapid fluctuations in the liquid state or in biologically relevant environments; and the observation and study, at nanoscales, of the ultrafast dynamics of non-crystalline materials. [8] [9]

Related Research Articles

<span class="mw-page-title-main">Band gap</span> Energy range in a solid where no electron states exist

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps are generally insulators, those with small band gaps are semiconductor, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.

Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

<span class="mw-page-title-main">Quantum dot</span> Zero-dimensional, nano-scale semiconductor particles with novel optical and electronic properties

Quantum dots (QDs) or semiconductor nanocrystals are semiconductor particles a few nanometres in size with optical and electronic properties that differ from those of larger particles via quantum mechanical effects. They are a central topic in nanotechnology and materials science. When a quantum dot is illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band. The excited electron can drop back into the valence band releasing its energy as light. This light emission (photoluminescence) is illustrated in the figure on the right. The color of that light depends on the energy difference between the conductance band and the valence band, or the transition between discrete energy states when the band structure is no longer well-defined in QDs.

<span class="mw-page-title-main">Potential well</span> Concept in quantum mechanics

A potential well is the region surrounding a local minimum of potential energy. Energy captured in a potential well is unable to convert to another type of energy because it is captured in the local minimum of a potential well. Therefore, a body may not proceed to the global minimum of potential energy, as it would naturally tend to do due to entropy.

<span class="mw-page-title-main">Quantum well</span> Concept in quantum mechanics

A quantum well is a potential well with only discrete energy values.

In solid-state physics, the electronic band structure of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have.

A quantum dot laser is a semiconductor laser that uses quantum dots as the active laser medium in its light emitting region. Due to the tight confinement of charge carriers in quantum dots, they exhibit an electronic structure similar to atoms. Lasers fabricated from such an active media exhibit device performance that is closer to gas lasers, and avoid some of the negative aspects of device performance associated with traditional semiconductor lasers based on bulk or quantum well active media. Improvements in modulation bandwidth, lasing threshold, relative intensity noise, linewidth enhancement factor and temperature insensitivity have all been observed. The quantum dot active region may also be engineered to operate at different wavelengths by varying dot size and composition. This allows quantum dot lasers to be fabricated to operate at wavelengths previously not possible using semiconductor laser technology. One challenge in the further advances with quantum dot lasers is the presence of multicarrier Auger processes which increases the nonradiative rate upon population inversion. Auger processes are intrinsic to the material but, in contrast to bulk semiconductors, they can be engineered to some degree in quantum dots at the cost of reducing the radiative rate. Another obstacle to the specific goal of electrically-pumped quantum dot lasing is the generally weak conductivity of quantum dot films.

In mesoscopic physics, a quantum wire is an electrically conducting wire in which quantum effects influence the transport properties. Usually such effects appear in the dimension of nanometers, so they are also referred to as nanowires.

<span class="mw-page-title-main">Coulomb blockade</span>

In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the conductance of a device may not be constant at low bias voltages, but disappear for biases under a certain threshold, i.e. no current flows.

Hybrid solar cells combine advantages of both organic and inorganic semiconductors. Hybrid photovoltaics have organic materials that consist of conjugated polymers that absorb light as the donor and transport holes. Inorganic materials in hybrid cells are used as the acceptor and electron transporter in the structure. The hybrid photovoltaic devices have a potential for not only low-cost by roll-to-roll processing but also for scalable solar power conversion.

<span class="mw-page-title-main">Quantum dot solar cell</span> Type of solar cell based on quantum dot devices

A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires or advanced molecular electronics.

<span class="mw-page-title-main">Nanomechanics</span>

Nanomechanics is a branch of nanoscience studying fundamental mechanical properties of physical systems at the nanometer scale. Nanomechanics has emerged on the crossroads of biophysics, classical mechanics, solid-state physics, statistical mechanics, materials science, and quantum chemistry. As an area of nanoscience, nanomechanics provides a scientific foundation of nanotechnology.

The quantum-confined Stark effect (QCSE) describes the effect of an external electric field upon the light absorption spectrum or emission spectrum of a quantum well (QW). In the absence of an external electric field, electrons and holes within the quantum well may only occupy states within a discrete set of energy subbands. Only a discrete set of frequencies of light may be absorbed or emitted by the system. When an external electric field is applied, the electron states shift to lower energies, while the hole states shift to higher energies. This reduces the permitted light absorption or emission frequencies. Additionally, the external electric field shifts electrons and holes to opposite sides of the well, decreasing the overlap integral, which in turn reduces the recombination efficiency of the system. The spatial separation between the electrons and holes is limited by the presence of the potential barriers around the quantum well, meaning that excitons are able to exist in the system even under the influence of an electric field. The quantum-confined Stark effect is used in QCSE optical modulators, which allow optical communications signals to be switched on and off rapidly.

The transport of heat in solids involves both electrons and vibrations of the atoms (phonons). When the solid is perfectly ordered over hundreds of thousands of atoms, this transport obeys established physics. However, when the size of the ordered regions decreases new physics can arise, thermal transport in nanostructures. In some cases heat transport is more effective, in others it is not.

<span class="mw-page-title-main">Core–shell semiconductor nanocrystal</span>

Core–shell semiconducting nanocrystals (CSSNCs) are a class of materials which have properties intermediate between those of small, individual molecules and those of bulk, crystalline semiconductors. They are unique because of their easily modular properties, which are a result of their size. These nanocrystals are composed of a quantum dot semiconducting core material and a shell of a distinct semiconducting material. The core and the shell are typically composed of type II–VI, IV–VI, and III–V semiconductors, with configurations such as CdS/ZnS, CdSe/ZnS, CdSe/CdS, and InAs/CdSe Organically passivated quantum dots have low fluorescence quantum yield due to surface related trap states. CSSNCs address this problem because the shell increases quantum yield by passivating the surface trap states. In addition, the shell provides protection against environmental changes, photo-oxidative degradation, and provides another route for modularity. Precise control of the size, shape, and composition of both the core and the shell enable the emission wavelength to be tuned over a wider range of wavelengths than with either individual semiconductor. These materials have found applications in biological systems and optics.

<span class="mw-page-title-main">QFET</span> Type of MOSFET

A quantum field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction which typically causes carriers to slow down by a factor of 3000. The result is an increase in logic speed by a factor of 10 with a simultaneous reduction in component power requirement and size also by a factor of 10. It achieves these things through a manufacturing process known as rapid thermal processing (RTP) that uses ultrafine layers of construction materials.

Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the composition of alloys, constructing layered materials with alternating compositions, or by inducing strain either epitaxially or topologically. A band gap is the range in a solid where no electron state can exist. The band gap of insulators is much larger than in semiconductors. Conductors or metals have a much smaller or nonexistent band gap than semiconductors since the valence and conduction bands overlap. Controlling the band gap allows for the creation of desirable electrical properties.

Intermediate band photovoltaics in solar cell research provides methods for exceeding the Shockley–Queisser limit on the efficiency of a cell. It introduces an intermediate band (IB) energy level in between the valence and conduction bands. Theoretically, introducing an IB allows two photons with energy less than the bandgap to excite an electron from the valence band to the conduction band. This increases the induced photocurrent and thereby efficiency.

This glossary of nanotechnology is a list of definitions of terms and concepts relevant to nanotechnology, its sub-disciplines, and related fields.

References

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  2. 1 2 3 "Sci-Tech Dictionary". McGraw-Hill Dictionary of Scientific and Technical Terms. McGraw-Hill Companies, Inc. 2003.
  3. 1 2 3 "Mesoscopic physics." McGraw-Hill Encyclopedia of Science and Technology. The McGraw-Hill Companies, Inc., 2005. Answers.com 25 Jan 2010. http://www.answers.com/topic/mesoscopic-physics-1
  4. ↑ Cahay, M (2001). Quantum confinement VI : nanostructured materials and devices : proceedings of the international symposium. Cahay, M., Electrochemical Society. Pennington, N.J.: Electrochemical Society. ISBN   978-1566773522. OCLC   49051457.
  5. ↑ Hartmut, Haug; Koch, Stephan W. (1994). Quantum theory of the optical and electronic properties of semiconductors (3rd ed.). Singapore: World Scientific. ISBN   978-9810220020. OCLC   32264947.
  6. 1 2 Quantum dots Archived 2010-02-01 at the Wayback Machine . 2008 Evident Technologies, Inc.
  7. ↑ Sánchez D, Büttiker M (2004). "Magnetic-field asymmetry of nonlinear mesoscopic transport". Phys. Rev. Lett. 93 (10): 106802. arXiv: cond-mat/0404387 . Bibcode:2004PhRvL..93j6802S. doi:10.1103/PhysRevLett.93.106802. PMID   15447435. S2CID   11686506.
  8. ↑ Barty, Anton; et al. (2008-06-22). "Ultrafast single-shot diffraction imaging of nanoscale dynamics". Nature Photonics . 2 (7): 415–419 (2008). CiteSeerX   10.1.1.712.8451 . doi:10.1038/nphoton.2008.128.
  9. ↑ "Study gains images at ultra-fast timescale". Science Online. Facts On File, Inc. United Press International. 2008-06-25. p. 01. Archived from the original (The research appears in the online edition of the journal Nature Photonics) on 2020-11-27. Retrieved 2010-01-25.
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